J. Sedlmeir

1.8k citations

11 papers · 214 indexed · h-index 6

Co-authors: Robert Heinrich W. Hänsch R. Kakoschke Georg Georgakos D. Schmitt‐Landsiedel T. Nirschl Jasmin Aghassi‐Hagmann Tor A. Fjeldly
Topics: Advancements in Semiconductor Devices and Circuit Design (10 papers)Semiconductor materials and devices (9 papers)Silicon Carbide Semiconductor Technologies (3 papers)
Cited by: Electrical and Electronic Engineering Biomedical Engineering Atomic and Molecular Physics, and Optics
Journals: IEEE Transactions on Electron Devices IEEE Electron Device Letters Solid-State Electronics
Partner nations: Germany Norway United States

In The Last Decade

J. Sedlmeir

11 papers receiving 209 citations

Peers

Countries citing papers authored by J. Sedlmeir

Since Specialization

Citations

This map shows the geographic impact of J. Sedlmeir's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Sedlmeir with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Sedlmeir more than expected).

Fields of papers citing papers by J. Sedlmeir

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Sedlmeir. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Sedlmeir. The network helps show where J. Sedlmeir may publish in the future.

Co-authorship network of co-authors of J. Sedlmeir

This figure shows the co-authorship network connecting the top 25 collaborators of J. Sedlmeir. A scholar is included among the top collaborators of J. Sedlmeir based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Sedlmeir. J. Sedlmeir is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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11 of 11 papers shown

#	Work	Indexed citations
1	Temperature dependent compact modeling of gate tunneling leakage current in double gate MOSFETs 2013 ·Solid-State Electronics ·Ghader Darbandy,Jasmin Aghassi‐Hagmann,J. Sedlmeir,(unknown),(unknown),A. Cerdeira,Benjamı́n Iñı́guez	5
2	Assessment of NBTI in Presence of Self-Heating in High- $k$ SOI FinFETs 2012 ·IEEE Electron Device Letters ·(unknown),Sourabh Khandelwal,Jasmin Aghassi‐Hagmann,J. Sedlmeir,Tor A. Fjeldly	14
3	Temperature dependence of compact analytical modeling of gate tunneling current in Double Gate MOSFETs 2012 ·Ghader Darbandy,(unknown),J. Sedlmeir,(unknown),(unknown),A. Cerdeira,(unknown)	1
4	Impact of Self-Heating in SOI FinFETs on Analog Circuits and Interdie Variability 2011 ·IEEE Electron Device Letters ·(unknown),Jasmin Aghassi‐Hagmann,(unknown),J. Sedlmeir,(unknown),(unknown),Robert Heinrich,Tor A. Fjeldly	14
5	Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling 2011 ·IEEE Transactions on Electron Devices ·Nicolas Chevillon,(unknown),Christophe Lallement,F. Prégaldiny,Morgan Madec,J. Sedlmeir,(unknown)	28
6	Compact modeling framework for multigate SOI MOSFETs based on conformal mapping techniques 2010 ·(unknown),(unknown),Jasmin Aghassi‐Hagmann,J. Sedlmeir,Tor A. Fjeldly	1
7	Self Heating Simulation of Multi-Gate FETs 2006 ·(unknown),T. Schulz,(unknown),(unknown),(unknown),Andrew Marshall,K. Matthews,J. Sedlmeir,(unknown),G. Knoblinger,(unknown),P. Patruno,J.-P. Colinge	16
8	The tunneling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes 2005 ·T. Nirschl,(unknown),(unknown),J. Sedlmeir,Robert Heinrich,R. Kakoschke,(unknown),(unknown),C. Pacha,T. Schulz,Martin Ostermayr,Alexander Olbrich,Georg Georgakos,(unknown),W. Hänsch,D. Schmitt‐Landsiedel	52
9	Scaling properties of the tunneling field effect transistor (TFET): Device and circuit 2005 ·Solid-State Electronics ·T. Nirschl,(unknown),J. Fischer,M. Fulde,(unknown),(unknown),J. Sedlmeir,C. Weber,Robert Heinrich,(unknown),(unknown),(unknown),Uwe Feldmann,(unknown),(unknown),Georg Georgakos,A. Huber,R. Kakoschke,W. Hänsch,D. Schmitt‐Landsiedel	79
10	Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale PMOSFETs 2003 ·TechConnect Briefs ·Christoph Jungemann,B. Meinerzhagen,(unknown),(unknown),(unknown),J. Sedlmeir	2
11	Probe station testing of large area silicon drift detectors 2000 ·IEEE Transactions on Nuclear Science ·(unknown),R. Bellwied,R. Beuttenmuller,(unknown),H. Dyke,V. Eremin,(unknown),G. W. Hoffmann,T. J. Humanic,M. Grau,I. Ilyashenko,I. Kotov,H.W. Kraner,(unknown),(unknown),D. Lynn,S.U. Pandey,(unknown),J. Sedlmeir,E. Sugarbaker,J. Takahashi	2

About J. Sedlmeir

J. Sedlmeir is a scholar working on Electrical and Electronic Engineering, Radiation and Nuclear and High Energy Physics, having authored 11 papers that have together received 214 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (10 papers), Semiconductor materials and devices (9 papers) and Silicon Carbide Semiconductor Technologies (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (211 citations), Biomedical Engineering (52 citations) and Atomic and Molecular Physics, and Optics (11 citations). J. Sedlmeir has collaborated with scholars based in Germany, Norway and United States. Frequent co-authors include Robert Heinrich, W. Hänsch, R. Kakoschke, Georg Georgakos, D. Schmitt‐Landsiedel, T. Nirschl, Jasmin Aghassi‐Hagmann, Tor A. Fjeldly, Morgan Madec and M. Fulde. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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