Hideki Hasegawa

5.3k total citations
249 papers, 4.4k citations indexed

About

Hideki Hasegawa is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Hideki Hasegawa has authored 249 papers receiving a total of 4.4k indexed citations (citations by other indexed papers that have themselves been cited), including 203 papers in Electrical and Electronic Engineering, 184 papers in Atomic and Molecular Physics, and Optics and 49 papers in Materials Chemistry. Recurrent topics in Hideki Hasegawa's work include Semiconductor materials and devices (115 papers), Semiconductor Quantum Structures and Devices (113 papers) and Semiconductor materials and interfaces (61 papers). Hideki Hasegawa is often cited by papers focused on Semiconductor materials and devices (115 papers), Semiconductor Quantum Structures and Devices (113 papers) and Semiconductor materials and interfaces (61 papers). Hideki Hasegawa collaborates with scholars based in Japan, United States and United Kingdom. Hideki Hasegawa's co-authors include Tamotsu Hashizume, Shinya Ootomo, Seiya Kasai, Taketomo Sato, Junji Kotani, Takanori Inagaki, Hideo Ohno, Takashi Fukui, Hajime Fujikura and Hiroshi Okada and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Hideki Hasegawa

242 papers receiving 4.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hideki Hasegawa Japan 32 3.5k 2.3k 2.0k 971 926 249 4.4k
Jasprit Singh United States 34 2.7k 0.8× 2.7k 1.2× 1.0k 0.5× 1.5k 1.5× 475 0.5× 131 4.2k
R. M. Kolbas United States 30 2.7k 0.8× 2.3k 1.0× 1.5k 0.8× 1.8k 1.9× 1.1k 1.1× 134 4.5k
S. D. Hersee United States 31 1.7k 0.5× 1.2k 0.5× 1.6k 0.8× 1.2k 1.3× 800 0.9× 99 3.1k
W. S. Hobson United States 30 3.2k 0.9× 1.9k 0.8× 736 0.4× 1.0k 1.0× 613 0.7× 250 4.0k
P. E. Wigen United States 30 1.1k 0.3× 2.2k 0.9× 945 0.5× 521 0.5× 1.5k 1.6× 178 3.0k
Hans J. Hug Switzerland 30 934 0.3× 2.5k 1.1× 551 0.3× 644 0.7× 643 0.7× 98 3.2k
S. J. Bending United Kingdom 32 965 0.3× 2.3k 1.0× 2.0k 1.0× 1.0k 1.0× 781 0.8× 182 3.9k
H. Hardtdegen Germany 31 1.5k 0.4× 1.6k 0.7× 1.3k 0.6× 1.2k 1.2× 581 0.6× 217 3.1k
Robert D. Grober United States 22 1.2k 0.3× 1.3k 0.6× 398 0.2× 769 0.8× 673 0.7× 53 2.7k

Countries citing papers authored by Hideki Hasegawa

Since Specialization
Citations

This map shows the geographic impact of Hideki Hasegawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hideki Hasegawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hideki Hasegawa more than expected).

Fields of papers citing papers by Hideki Hasegawa

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hideki Hasegawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hideki Hasegawa. The network helps show where Hideki Hasegawa may publish in the future.

Co-authorship network of co-authors of Hideki Hasegawa

This figure shows the co-authorship network connecting the top 25 collaborators of Hideki Hasegawa. A scholar is included among the top collaborators of Hideki Hasegawa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hideki Hasegawa. Hideki Hasegawa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Suwa, Kei, et al.. (2013). An experimental study on image based multi-channel SAR-GMTI algorithm. IEEE Asia-Pacific Conference on Synthetic Aperture Radar. 577–580. 8 indexed citations
2.
Wakayama, Toshio, et al.. (2009). A coherence improvement technique for coherent change detection in SAR interferometry. European Radar Conference. 278–281. 10 indexed citations
3.
Kimura, Takeshi, Hideki Hasegawa, Taketomo Sato, & Tamotsu Hashizume. (2006). Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process. Japanese Journal of Applied Physics. 45(4S). 3414–3414. 28 indexed citations
4.
Kotani, Junji, Hideki Hasegawa, & Tamotsu Hashizume. (2004). Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model. Applied Surface Science. 237(1-4). 213–218. 12 indexed citations
5.
Hashim, Abdul Manaf, et al.. (2003). Plasma wave interactions in the microwave to THz range between carriers in a semiconductor 2DEG and interdigital slow waves. Superlattices and Microstructures. 34(3-6). 531–537. 10 indexed citations
6.
Ootomo, Shinya, Hideki Hasegawa, & Tamotsu Hashizume. (2003). Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al~2O~3 Insulated Gate. IEICE Transactions on Electronics. 86(10). 2043–2050. 1 indexed citations
7.
Jin, Zhi, Tamotsu Hashizume, & Hideki Hasegawa. (2002). Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride. Applied Surface Science. 190(1-4). 361–365. 23 indexed citations
8.
Kasai, Seiya, et al.. (2002). Gate control characteristics in GaAs nanometer-scale Schottky wrap gate structures. Applied Surface Science. 190(1-4). 242–246. 15 indexed citations
9.
Kasai, Seiya, et al.. (2001). Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HEMTs Having a Silicon Interface Control Layer. IEICE Transactions on Electronics. 84(10). 1335–1343. 1 indexed citations
10.
Yoshida, Toshiyuki & Hideki Hasegawa. (2001). Realization of ultrahigh-vacuum-compatible defect-free hydrogen terminated silicon surfaces with the use of a UHV contactless capacitance–voltage method. Applied Surface Science. 175-176. 163–168. 7 indexed citations
11.
Hasegawa, Hideki & Seiya Kasai. (2001). Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires. Physica E Low-dimensional Systems and Nanostructures. 11(2-3). 149–154. 48 indexed citations
12.
Adamowicz, B. & Hideki Hasegawa. (2000). Computer analysis of photon-induced non-equilibrium phenomena at Si and AlGaAs surfaces. Vacuum. 57(2). 111–120. 4 indexed citations
13.
Negoro, Noboru, Hajime Fujikura, & Hideki Hasegawa. (2000). Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation. Applied Surface Science. 159-160. 292–300. 2 indexed citations
14.
Fujikura, Hajime, et al.. (2000). Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on (001) InP Surfaces and Their Photoluminescence Characterizations. Japanese Journal of Applied Physics. 39(7S). 4616–4616. 43 indexed citations
15.
Ishikawa, Yasuhiko, et al.. (1998). Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs(110) surfaces grown by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(4). 2387–2394. 13 indexed citations
16.
Akazawa, Masamichi, Hideki Hasegawa, & E. Ohue. (1989). In_ Ga_ As MISFETs Having an Ultrathin MBE Si Interface Control Layer and Photo-CVD SiO_2 Insulator (SOLID STATE DEVICES AND MATERIALS 1). Japanese Journal of Applied Physics. 28(11). 1 indexed citations
17.
Hasegawa, Hideki, et al.. (1988). Anodic Oxidation of Hydrogenated Amorphous Silicon and Properties of Oxide. Journal of The Electrochemical Society. 135(2). 424–431. 23 indexed citations
18.
Hasegawa, Hideki & Hideo Ohno. (1986). A Common Energy Reference for DX Centers and EL2 Levels in III–V Compound Semiconductors. Japanese Journal of Applied Physics. 25(4A). L319–L319. 14 indexed citations
19.
20.
Ohno, Hideo, et al.. (1984). Mechanism of High Gain in GaAs Photoconductive Detectors under Low Excitation. Japanese Journal of Applied Physics. 23(5A). L299–L299. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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