Yuki Niiyama

946 total citations · 1 hit paper
23 papers, 802 citations indexed

About

Yuki Niiyama is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yuki Niiyama has authored 23 papers receiving a total of 802 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Condensed Matter Physics, 21 papers in Electrical and Electronic Engineering and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yuki Niiyama's work include GaN-based semiconductor devices and materials (22 papers), Silicon Carbide Semiconductor Technologies (18 papers) and Semiconductor materials and devices (12 papers). Yuki Niiyama is often cited by papers focused on GaN-based semiconductor devices and materials (22 papers), Silicon Carbide Semiconductor Technologies (18 papers) and Semiconductor materials and devices (12 papers). Yuki Niiyama collaborates with scholars based in Japan, United States and United Kingdom. Yuki Niiyama's co-authors include Takehiko Nomura, Hiroshi Kambayashi, Seikoh Yoshida, Sadahiro Kato, Nariaki Ikeda, Yoshihiro Sato, Shinya Ootomo, T. Paul Chow, Takahiro Nomura and S. Yoshida and has published in prestigious journals such as Proceedings of the IEEE, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

Yuki Niiyama

23 papers receiving 769 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

GaN Power Transistors on Si Substrates for Switching Applications

2010 447 citations Nariaki Ikeda, Yuki Niiyama et al. Proceedings of the IEEE profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Yuki Niiyama Japan	13	736	632	375	153	96	23	802
Takehiko Nomura Japan	15	887 1.2×	758 1.2×	483 1.3×	189 1.2×	103 1.1×	29	965
Hiroshi Kambayashi Japan	15	920 1.3×	797 1.3×	500 1.3×	190 1.2×	109 1.1×	34	1.0k
T. Ogura Japan	16	623 0.8×	927 1.5×	255 0.7×	121 0.8×	163 1.7×	37	1.1k
Tsuyoshi Tanaka Japan	5	946 1.3×	811 1.3×	479 1.3×	172 1.1×	145 1.5×	8	1.0k
Daisuke Ueda Japan	6	931 1.3×	815 1.3×	451 1.2×	172 1.1×	148 1.5×	13	1.1k
Hisayoshi Matsuo Japan	11	1.2k 1.6×	982 1.6×	581 1.5×	227 1.5×	179 1.9×	12	1.3k
Nariaki Ikeda Japan	12	758 1.0×	704 1.1×	373 1.0×	157 1.0×	108 1.1×	40	881
A.S. Augustine Fletcher India	12	501 0.7×	507 0.8×	222 0.6×	153 1.0×	127 1.3×	30	691
Atsushi Yamada Japan	11	544 0.7×	432 0.7×	280 0.7×	173 1.1×	89 0.9×	32	627
Omair I. Saadat United States	10	453 0.6×	423 0.7×	230 0.6×	128 0.8×	76 0.8×	17	545

Countries citing papers authored by Yuki Niiyama

Since Specialization

Citations

This map shows the geographic impact of Yuki Niiyama's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yuki Niiyama with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yuki Niiyama more than expected).

Fields of papers citing papers by Yuki Niiyama

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yuki Niiyama. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yuki Niiyama. The network helps show where Yuki Niiyama may publish in the future.

Co-authorship network of co-authors of Yuki Niiyama

This figure shows the co-authorship network connecting the top 25 collaborators of Yuki Niiyama. A scholar is included among the top collaborators of Yuki Niiyama based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yuki Niiyama. Yuki Niiyama is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ikeda, Nariaki, Yuki Niiyama, Hiroshi Kambayashi, et al.. (2010). GaN Power Transistors on Si Substrates for Switching Applications. Proceedings of the IEEE. 98(7). 1151–1161. 447 indexed citations breakdown →

Niiyama, Yuki, Shinya Ootomo, Jiang Li, et al.. (2010). Normally off operation GaN-based MOSFETs for power electronics applications. Semiconductor Science and Technology. 25(12). 125006–125006. 16 indexed citations

Niiyama, Yuki, Zhongda Li, T. Paul Chow, et al.. (2010). Over 1000V/30mA operation GaN-on-Si MOSFETs fabricated on Si substrates. Solid-State Electronics. 56(1). 73–78. 6 indexed citations

Niiyama, Yuki, Nariaki Ikeda, Shinya Kato, & Muneyuki Masuda. (2010). Soft Switching Controlled AlGaN Based Power Transistors for Induction Heating Applications. 8. 1–4. 4 indexed citations

Niiyama, Yuki, Shinya Ootomo, Hiroshi Kambayashi, et al.. (2009). Normally-Off Operation GaN Based MOSFETs for Power Electronics. 1–4. 15 indexed citations

Tang, Kailin, Zhongda Li, T. Paul Chow, et al.. (2009). Enhancement-mode GaN hybrid MOS-HEMTs with breakdown voltage of 1300V. 279–282. 8 indexed citations

Huang, W., T. Paul Chow, Yuki Niiyama, Takahiro Nomura, & S. Yoshida. (2009). Experimental Demonstration of Novel High-Voltage Epilayer RESURF GaN MOSFET. IEEE Electron Device Letters. 30(10). 1018–1020. 19 indexed citations

Kambayashi, Hiroshi, Yoshihiro Sato, Yuki Niiyama, et al.. (2009). Enhancement-mode GaN hybrid MOS-HFETs on Si substrates with Over 70 A operation. 21–24. 15 indexed citations

Huang, W., T. P. Chow, Yuki Niiyama, Takahiro Nomura, & S. Yoshida. (2009). 730V, 34mΩ-cm<sup>2</sup> lateral epilayer RESURF GaN MOSFET. 29–32. 1 indexed citations

10.

Niiyama, Yuki, et al.. (2008). Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates. Japanese Journal of Applied Physics. 47(9R). 7128–7128. 21 indexed citations

11.

Niiyama, Yuki, Hiroshi Kambayashi, Shinya Ootomo, et al.. (2008). GaN MOSFETs with Large Current and Normally-off Operation. ECS Transactions. 16(7). 161–168. 2 indexed citations

12.

Huang, W., Zhongda Li, T. Paul Chow, et al.. (2008). Enhancement-mode gan hybrid mos-hemts with r on,sp of 20 mω-cm². 295–298. 56 indexed citations

13.

Yoshida, Seikoh, et al.. (2008). 288 V-10 V DC- DC Converter Application Using AlGaN/GaN HFETs. Materials science forum. 600-603. 1321–1324. 5 indexed citations

14.

Niiyama, Yuki, Shinya Ootomo, Jiang Li, et al.. (2008). Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics. 47(7R). 5409–5409. 18 indexed citations

15.

Kambayashi, Hiroshi, Yuki Niiyama, Shinya Ootomo, et al.. (2007). Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation. IEEE Electron Device Letters. 28(12). 1077–1079. 49 indexed citations

16.

Nomura, Takehiko, et al.. (2007). High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates. Solid-State Electronics. 52(1). 150–155. 37 indexed citations

17.

Niiyama, Yuki, et al.. (2007). Induction heating system operation by soft switching GaN heterojunction field effect transistors. 802. 157–160. 3 indexed citations

18.

Niiyama, Yuki, Hiroshi Kambayashi, Shinya Ootomo, Takehiko Nomura, & Seikoh Yoshida. (2007). 250°C operation normally-off GaN MOSFETs. Solid-State Electronics. 51(5). 784–787. 18 indexed citations

19.

Niiyama, Yuki, et al.. (2007). High‐quality SiO₂/GaN interface for enhanced operation field‐effect transistor. physica status solidi (a). 204(6). 2032–2036. 28 indexed citations

20.

Niiyama, Yuki, Sadahiro Kato, Yoshihiro Sato, et al.. (2006). Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE. MRS Proceedings. 955. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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