Guohao Yu

1.9k total citations
104 papers, 1.6k citations indexed

About

Guohao Yu is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Guohao Yu has authored 104 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 92 papers in Condensed Matter Physics, 67 papers in Electrical and Electronic Engineering and 40 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Guohao Yu's work include GaN-based semiconductor devices and materials (91 papers), Semiconductor materials and devices (41 papers) and Ga2O3 and related materials (39 papers). Guohao Yu is often cited by papers focused on GaN-based semiconductor devices and materials (91 papers), Semiconductor materials and devices (41 papers) and Ga2O3 and related materials (39 papers). Guohao Yu collaborates with scholars based in China, United States and United Kingdom. Guohao Yu's co-authors include Yong Cai, Baoshun Zhang, Kai Fu, Xiaodong Zhang, Ronghui Hao, Liang Song, Yaming Fan, Xinping Zhang, Xuguang Deng and Zhili Zhang and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Guohao Yu

96 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Guohao Yu China 20 986 922 761 615 167 104 1.6k
David J. Rogers France 17 372 0.4× 383 0.4× 604 0.8× 846 1.4× 143 0.9× 84 1.1k
Salvatore Di Franco Italy 21 318 0.3× 1.0k 1.1× 283 0.4× 597 1.0× 331 2.0× 105 1.4k
Ivan Shchemerov Russia 24 265 0.3× 460 0.5× 1.5k 1.9× 1.4k 2.3× 89 0.5× 74 1.7k
Tom Mates United States 18 670 0.7× 640 0.7× 686 0.9× 776 1.3× 185 1.1× 39 1.4k
S.B. Lişesivdin Türkiye 18 589 0.6× 556 0.6× 397 0.5× 634 1.0× 345 2.1× 84 1.2k
S. Gautier France 22 762 0.8× 383 0.4× 441 0.6× 470 0.8× 166 1.0× 67 1.0k
K.G. Lisunov Moldova 17 459 0.5× 366 0.4× 521 0.7× 574 0.9× 234 1.4× 85 1.0k
S. S. A. Seo United States 27 773 0.8× 461 0.5× 1.3k 1.7× 1.2k 2.0× 183 1.1× 75 1.8k
Xi Tang China 21 1.2k 1.2× 1.1k 1.2× 847 1.1× 772 1.3× 243 1.5× 80 1.7k
Sunil Singh Kushvaha India 18 413 0.4× 492 0.5× 381 0.5× 700 1.1× 225 1.3× 121 1.1k

Countries citing papers authored by Guohao Yu

Since Specialization
Citations

This map shows the geographic impact of Guohao Yu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Guohao Yu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Guohao Yu more than expected).

Fields of papers citing papers by Guohao Yu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Guohao Yu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Guohao Yu. The network helps show where Guohao Yu may publish in the future.

Co-authorship network of co-authors of Guohao Yu

This figure shows the co-authorship network connecting the top 25 collaborators of Guohao Yu. A scholar is included among the top collaborators of Guohao Yu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Guohao Yu. Guohao Yu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yu, Guohao, Haochen Zhang, Yang An, et al.. (2025). Improved Stability of Fully Recessed Normally-Off GaN MIS-HEMTs With SiN x /AlN Dielectric Stack. IEEE Transactions on Electron Devices. 72(9). 4764–4769.
2.
Zhou, Heng, et al.. (2025). Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs. Journal of Physics Communications. 9(5). 55004–55004. 1 indexed citations
3.
Yang, Guang, Guohao Yu, Qian Cui, et al.. (2025). BioMGCore: A toolkit for detection of biological metabolites in microbiome. PubMed. 2(4). e70036–e70036.
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Yu, Guohao, Qing Li, Yongyong Cai, et al.. (2025). Integration of μLED and GaN 2T1C Circuit Based on Hydrogen-Treated p -GaN Technology. IEEE Electron Device Letters. 46(12). 2341–2344.
6.
Yu, Guohao, Ping Zhang, Yang An, et al.. (2025). Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries. Frontiers of Optoelectronics. 18(1). 4–4. 1 indexed citations
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Deng, Xuguang, Li Zhang, Guohao Yu, et al.. (2024). High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric. Applied Physics Letters. 124(23). 2 indexed citations
11.
Yu, Guohao, Xuguang Deng, Li Zhang, et al.. (2023). Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature. Applied Physics Letters. 122(6). 1 indexed citations
12.
An, Yang, Xing Wei, Yu Hu, et al.. (2023). Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN Hybrid Anode Diode with Wide Operation Temperature from 73 K to 573 K. Crystals. 13(4). 620–620. 6 indexed citations
13.
Yu, Guohao, Yang An, Bingliang Zhang, et al.. (2023). Effective suppression of interface states in recessed-gate MIS-HEMTs by TMAH wet etching. Applied Physics Express. 17(1). 11004–11004. 4 indexed citations
14.
Yu, Guohao, Xin Zhou, Li Zhang, et al.. (2023). Comparative Analysis of the GaN Nonpolar Plane Morphology by Wet Treatment and Its Effect on Electrical Properties in Trench MOSFET. ACS Applied Materials & Interfaces. 15(21). 26159–26165. 5 indexed citations
15.
Yu, Guohao, et al.. (2023). Polarization Properties in GaN Double-Channel HEMTs at Mid-Infrared Frequencies. Plasmonics. 19(3). 1121–1130. 2 indexed citations
16.
Wei, Xing, Xin Zhou, Wenbo Tang, et al.. (2022). 2.69 kV/2.11 mΩ⋅cm and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage. IEEE Electron Device Letters. 44(1). 13–16. 8 indexed citations
17.
Wei, Xing, Li Zhang, Xiaodong Zhang, et al.. (2021). Simulation of enhancement-mode recessed-gate p-channel HFETs based on polarization-induced doping and an InGaN/GaN/AlGaN heterostructure. Semiconductor Science and Technology. 36(7). 07LT01–07LT01. 2 indexed citations
18.
Sun, Jiandong, Zhipeng Zhang, Xiang Li, et al.. (2019). Two-terminal terahertz detectors based on AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters. 115(11). 10 indexed citations
19.
He, Tao, Yukun Zhao, Xiaodong Zhang, et al.. (2018). Solar‐blind ultraviolet photodetector based on graphene/vertical Ga 2 O 3 nanowire array heterojunction. Nanophotonics. 7(9). 1557–1562. 75 indexed citations
20.
Hao, Ronghui, Weiyi Li, Kai Fu, et al.. (2017). Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs. IEEE Electron Device Letters. 38(11). 1567–1570. 102 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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