Sijung Yoo

1.2k total citations
31 papers, 937 citations indexed

About

Sijung Yoo is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Sijung Yoo has authored 31 papers receiving a total of 937 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 19 papers in Materials Chemistry and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Sijung Yoo's work include Advanced Memory and Neural Computing (15 papers), Phase-change materials and chalcogenides (12 papers) and Ferroelectric and Negative Capacitance Devices (11 papers). Sijung Yoo is often cited by papers focused on Advanced Memory and Neural Computing (15 papers), Phase-change materials and chalcogenides (12 papers) and Ferroelectric and Negative Capacitance Devices (11 papers). Sijung Yoo collaborates with scholars based in South Korea, United States and Germany. Sijung Yoo's co-authors include Cheol Seong Hwang, Taehong Gwon, Taeyong Eom, Kyung Jean Yoon, Jung Ho Yoon, Dae Eun Kwon, Tae Hyung Park, Young Jae Kwon, Hae Jin Kim and Yumin Kim and has published in prestigious journals such as Advanced Materials, Nature Communications and Applied Physics Letters.

In The Last Decade

Sijung Yoo

31 papers receiving 911 citations

Peers

Sijung Yoo

EEE

CMN

EOMM

Chi‐Hsin Huang Taiwan

Moon Hyung Jang United States

Shania Rehman South Korea

Xiaohan Wu United States

Jamal Aziz South Korea

Ruijing Ge United States

Congyan Lu China

Subhranu Samanta Singapore

Burt Fowler United States

Myo Than Htay Japan

Chi‐Hsin Huang Taiwan

Sijung Yoo

887 ×1.1

EEE

353 ×0.9

263 ×1.1

CMN

267 ×1.4

54 ×0.6

EOMM

Citations per year, relative to Sijung Yoo Sijung Yoo (= 1×) peers Chi‐Hsin Huang

Countries citing papers authored by Sijung Yoo

Since Specialization

Citations

This map shows the geographic impact of Sijung Yoo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sijung Yoo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sijung Yoo more than expected).

Fields of papers citing papers by Sijung Yoo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sijung Yoo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sijung Yoo. The network helps show where Sijung Yoo may publish in the future.

Co-authorship network of co-authors of Sijung Yoo

This figure shows the co-authorship network connecting the top 25 collaborators of Sijung Yoo. A scholar is included among the top collaborators of Sijung Yoo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sijung Yoo. Sijung Yoo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Song, Min, Ryun‐Han Koo, Jangsaeng Kim, et al.. (2025). Ferroelectric NAND for efficient hardware bayesian neural networks. Nature Communications. 16(1). 6879–6879. 1 indexed citations

Lee, Hyun Jae, Seung‐Geol Nam, Yunseong Lee, et al.. (2024). Laminated Ferroelectric FET With Large Memory Window and High Reliability. IEEE Transactions on Electron Devices. 71(4). 2411–2416. 11 indexed citations

Lee, Yunseong, Un Jeong Kim, Ki‐Hong Kim, et al.. (2024). Boosting non-volatile memory performance with exhalative annealing: A novel approach to low-temperature crystallization of hafnia based ferroelectric. Materials Today Nano. 28. 100546–100546. 2 indexed citations

Yoo, Sijung, Duk‐Hyun Choe, Yunseong Lee, et al.. (2024). Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer. 1–2. 10 indexed citations

Yoo, Sijung, Donghoon Kim, Won‐Jun Lee, et al.. (2022). Structural and Device Considerations for Vertical Cross Point Memory with Single-stack Memory toward CXL Memory beyond 1x nm 3DXP. 1–4. 6 indexed citations

Lee, Minkyu, et al.. (2021). PE-ALD of Ge_1−xS_xamorphous chalcogenide alloys for OTS applications. Journal of Materials Chemistry C. 9(18). 6006–6013. 16 indexed citations

Zhang, Hehe, Sijung Yoo, Stephan Menzel, et al.. (2018). Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO₂/Ti/Pt Nanosized ReRAM Devices. ACS Applied Materials & Interfaces. 10(35). 29766–29778. 77 indexed citations

Kim, Woohyun, Sijung Yoo, Chanyoung Yoo, et al.. (2018). Atomic layer deposition of GeSe films using HGeCl₃and [(CH₃)₃Si]₂Se with the discrete feeding method for the ovonic threshold switch. Nanotechnology. 29(36). 365202–365202. 24 indexed citations

Yoo, Sijung, et al.. (2018). Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior. Journal of Materials Chemistry C. 6(18). 5025–5032. 40 indexed citations

10.

Kim, Yumin, Young Jae Kwon, Dae Eun Kwon, et al.. (2018). Nociceptive Memristor. Advanced Materials. 30(8). 183 indexed citations

11.

Gwon, Taehong, Ahmed Yousef Mohamed, Chanyoung Yoo, et al.. (2017). Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition. ACS Applied Materials & Interfaces. 9(47). 41387–41396. 10 indexed citations

12.

Lee, Woongkyu, Sijung Yoo, Kyung Jean Yoon, et al.. (2016). Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases. Scientific Reports. 6(1). 20550–20550. 23 indexed citations

13.

Yoo, Sijung, Taeyong Eom, Taehong Gwon, & Cheol Seong Hwang. (2015). Bipolar resistive switching behavior of an amorphous Ge₂Sb₂Te₅thin films with a Te layer. Nanoscale. 7(14). 6340–6347. 46 indexed citations

14.

Zhou, Liwei, Kyung Jean Yoon, Hao Jiang, et al.. (2015). Electronic resistance switching in the Al/TiO_x/Al structure for forming-free and area-scalable memory. Nanoscale. 7(25). 11063–11074. 79 indexed citations

15.

Jiang, Anquan, Xiang Meng, David Wei Zhang, et al.. (2015). Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong. Scientific Reports. 5(1). 14618–14618. 12 indexed citations

16.

Eom, Taeyong, Taehong Gwon, Sijung Yoo, et al.. (2015). Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge₂Sb₂Te₅ Film for Phase Change Memory Application. Chemistry of Materials. 27(10). 3707–3713. 24 indexed citations

17.

Lee, Woongkyu, Sijung Yoo, Woojin Jeon, et al.. (2015). Reducing the nano-scale defect formation of atomic-layer-deposited SrTiO3 films by adjusting the cooling rate of the crystallization annealing of the seed layer. Thin Solid Films. 589. 723–729. 11 indexed citations

18.

Moon, Kyoung‐Woong, Doyeon Kim, Sijung Yoo, et al.. (2015). Magnetic bubblecade memory. 2015 IEEE Magnetics Conference (INTERMAG). 296. 1–1. 1 indexed citations

19.

Eom, Taeyong, Taehong Gwon, Sijung Yoo, et al.. (2014). Influence of the Kinetic Adsorption Process on the Atomic Layer Deposition Process of (GeTe₂)_(1–x)(Sb₂Te₃)_x Layers Using Ge⁴⁺–Alkoxide Precursors. Chemistry of Materials. 26(4). 1583–1591. 21 indexed citations

20.

Eom, Taeyong, Taehong Gwon, Sijung Yoo, et al.. (2014). Chemical interaction and ligand exchange between a [(CH₃)₃Si]₃Sb precursor and atomic layer deposited Sb₂Te₃films. Journal of Materials Chemistry C. 3(6). 1365–1370. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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