K. Adomi

886 total citations · 1 hit paper
19 papers, 729 citations indexed

About

K. Adomi is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, K. Adomi has authored 19 papers receiving a total of 729 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Atomic and Molecular Physics, and Optics, 15 papers in Electrical and Electronic Engineering and 4 papers in Condensed Matter Physics. Recurrent topics in K. Adomi's work include Semiconductor Quantum Structures and Devices (16 papers), Semiconductor materials and devices (8 papers) and Semiconductor materials and interfaces (6 papers). K. Adomi is often cited by papers focused on Semiconductor Quantum Structures and Devices (16 papers), Semiconductor materials and devices (8 papers) and Semiconductor materials and interfaces (6 papers). K. Adomi collaborates with scholars based in United States and Japan. K. Adomi's co-authors include H. Morkoç̌, N. Ōtsuka, S. F. Fang, H. Zabel, Chang‐Ho Choi, Swaminathan P. Iyer, S. Strite, M. Selim Ünlü, Guangjun Gao and Hidekiyo Harada and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

K. Adomi

19 papers receiving 697 citations

Hit Papers

Gallium arsenide and other compound semiconductors on sil... 1990 2026 2002 2014 1990 100 200 300 400
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Gallium arsenide and other compound semiconductors on silicon
    1990 476 citations S. F. Fang, K. Adomi et al. Journal of Applied Physics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Adomi United States 11 583 564 181 151 105 19 729
T. Murotani Japan 18 672 1.2× 537 1.0× 89 0.5× 193 1.3× 62 0.6× 56 782
Yoshihiro Kawarada Japan 9 634 1.1× 600 1.1× 108 0.6× 107 0.7× 189 1.8× 11 759
P. Krispin Germany 12 585 1.0× 628 1.1× 62 0.3× 115 0.8× 299 2.8× 52 726
K. Werner Netherlands 13 424 0.7× 308 0.5× 67 0.4× 131 0.9× 74 0.7× 36 509
M. Piccin Italy 13 308 0.5× 354 0.6× 228 1.3× 174 1.2× 211 2.0× 24 553
F. Briones Spain 13 514 0.9× 396 0.7× 165 0.9× 210 1.4× 42 0.4× 38 645
T. Takebe Japan 14 458 0.8× 371 0.7× 115 0.6× 212 1.4× 79 0.8× 40 588
J.C. Bischoff United States 5 633 1.1× 559 1.0× 80 0.4× 157 1.0× 78 0.7× 10 733
P. Schittenhelm Germany 11 444 0.8× 608 1.1× 131 0.7× 347 2.3× 47 0.4× 21 696
E. Koppensteiner Austria 13 276 0.5× 294 0.5× 71 0.4× 191 1.3× 80 0.8× 27 458

Countries citing papers authored by K. Adomi

Since Specialization
Citations

This map shows the geographic impact of K. Adomi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Adomi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Adomi more than expected).

Fields of papers citing papers by K. Adomi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Adomi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Adomi. The network helps show where K. Adomi may publish in the future.

Co-authorship network of co-authors of K. Adomi

This figure shows the co-authorship network connecting the top 25 collaborators of K. Adomi. A scholar is included among the top collaborators of K. Adomi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Adomi. K. Adomi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Adomi, K., et al.. (1993). Nitrogen doping in AlGaP grown by metalorganic vapor phase epitaxy using ammonia. Applied Physics Letters. 63(5). 663–665. 4 indexed citations
2.
Adomi, K., et al.. (1992). Characterization of AlGaP/GaP heterostructures grown by MOVPE. Journal of Crystal Growth. 124(1-4). 570–575. 20 indexed citations
3.
Gao, Guangjun, Mehmet Ünlü, B. Mazhari, et al.. (1992). Double-layer collector for heterojunction bipolar transistors. Solid-State Electronics. 35(1). 57–60. 4 indexed citations
4.
Adomi, K., Jen‐Inn Chyi, S. F. Fang, et al.. (1991). Molecular beam epitaxial growth of GaAs and other compound semiconductors. Thin Solid Films. 205(2). 182–212. 10 indexed citations
5.
Salvador, A., K. Adomi, Katsumi Kishino, M. Selim Ünlü, & H. Morkoç̌. (1991). GaAs multiple-quantum-well reflector modulators with 4:1 contrast ratios on Si. Journal of Applied Physics. 69(1). 534–536. 1 indexed citations
6.
Fan, Zhifang, et al.. (1991). Uniform junction temperature AlGaAs/GaAs power heterojunction bipolar transistors on silicon substrates. Applied Physics Letters. 58(10). 1068–1070. 6 indexed citations
7.
Adomi, K., S. Strite, H. Morkoç̌, Yoshio Nakamura, & N. Ōtsuka. (1991). Characterization of GaAs grown on Si epitaxial layers on GaAs substrates. Journal of Applied Physics. 69(1). 220–225. 37 indexed citations
8.
Shum, Kai, Yoshihiro Takiguchi, Jihad M. Mohaidat, et al.. (1991). Effect of valence-subband structure on the energy relaxation dynamics of electrons in GaAs quantum wells grown on Si. Physical review. B, Condensed matter. 44(8). 4044–4047. 2 indexed citations
9.
Ünlü, Mehmet, S. Strite, K. Adomi, Guangjun Gao, & H. Morkoç̌. (1990). Extremely low-resistance nonalloyed ohmic contacts on molecular beam epitaxially grown p -type Ge. Electronics Letters. 26(2). 89–91. 1 indexed citations
10.
Strite, S., M. Selim Ünlü, K. Adomi, & H. Morkoç̌. (1990). Si as a diffusion barrier for Ge/GaAs heterojunctions. Applied Physics Letters. 56(17). 1673–1675. 15 indexed citations
11.
Strite, S., D. Biswas, K. Adomi, & H. Morkoç̌. (1990). Study of sublattice orientation of GaAs on Ge. Journal of Applied Physics. 67(3). 1609–1612. 12 indexed citations
12.
Fang, S. F., K. Adomi, Swaminathan P. Iyer, et al.. (1990). Gallium arsenide and other compound semiconductors on silicon. Journal of Applied Physics. 68(7). R31–R58. 476 indexed citations breakdown →
13.
Ünlü, M. Selim, S. Strite, Guangjun Gao, K. Adomi, & H. Morkoç̌. (1990). Electrical characteristics of p+-Ge/(N-GaAs and N-AlGaAs) junctions and their applications to Ge base transistors. Applied Physics Letters. 56(9). 842–844. 15 indexed citations
14.
Strite, S., M. Selim Ünlü, K. Adomi, Guangjun Gao, & H. Morkoç̌. (1990). AlGaAs/Ge/GaAs heterojunction bipolar transistors grown by molecular beam epitaxy. IEEE Electron Device Letters. 11(5). 233–235. 14 indexed citations
15.
Strite, S., M. Selim Ünlü, K. Adomi, et al.. (1990). GaAs/Ge/GaAs heterostructures by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 8(5). 1131–1140. 44 indexed citations
16.
Adomi, K., S. Strite, & H. Morkoç̌. (1990). Antiphase-domain-free GaAs grown on pseudomorphic Si (100) surfaces by molecular beam epitaxy. Applied Physics Letters. 56(5). 469–471. 23 indexed citations
17.
Ünlü, M. Selim, S. Strite, K. Adomi, et al.. (1989). Characteristics of p -Ge/ N -GaAs heterojunctions grown by molecular beam epitaxy. Electronics Letters. 25(20). 1359–1360. 5 indexed citations
18.
Mito, Akihiro, et al.. (1985). Infrared radiofrequency double resonance spectroscopy: l-type doubling transitions in the ν7 state of CH3C15N. Journal of Molecular Spectroscopy. 109(2). 412–414. 2 indexed citations
19.
Abé, Takao, et al.. (1985). Deep Level Generation-Annihilation in Nitrogen Doped FZ Crystals. MRS Proceedings. 59. 38 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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