S. O’uchi

1.7k citations

159 papers · 1.4k indexed · h-index 22

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Low-power high-performance VLSI design
- Thin-Film Transistor Technologies
Hardware and Architecture top 10%

Papers in

Electrical and Electronic Engineering 154
- Advancements in Semiconductor Devices and Circuit Design 143
- Semiconductor materials and devices 143
- Integrated Circuits and Semiconductor Failure Analysis 49
- Ferroelectric and Negative Capacitance Devices 34
- Silicon Carbide Semiconductor Technologies 21
- Low-power high-performance VLSI design 10
- Thin-Film Transistor Technologies 8
Hardware and Architecture 4

Co-authors: Takashi Matsukawa Meishoku Masahara Yongxun Liu Kazuhiko Endo Junichi Tsukada Kunihiro Sakamoto Hiromi Yamauchi Yuki Ishikawa
Journals: Japanese Journal of Applied Physics (34 papers)IEEE Electron Device Letters (12 papers)Solid-State Electronics (8 papers)IEEE Transactions on Electron Devices (5 papers)Applied Physics Express (3 papers)
Partner nations: Japan South Korea United States

In The Last Decade

S. O’uchi

154 papers receiving 1.4k citations

Peers

Countries citing papers authored by S. O’uchi

Since Specialization

Citations

This map shows the geographic impact of S. O’uchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. O’uchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. O’uchi more than expected).

Fields of papers citing papers by S. O’uchi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. O’uchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. O’uchi. The network helps show where S. O’uchi may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. O’uchi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. O’uchi Line = papers co-authored together S. O’uchi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Single-Layer Wiring Design in UCIe to Realize Low-Cost Interposer Substrate Dilia Fontalvo Rivera, ミノルヒロタ, Katsuya Kikuchi, H. Shimamoto, K.U. Thiele, S. O’uchi	2024	1
2	Efficient Attention Mechanism by Softmax Function with Trained Coefficient IEICE Technical Report; IEICE Tech. Rep. ·Mary Fontenot, S. O’uchi, Masahiro Fujita	2021	1
3	Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology IEICE Technical Report; IEICE Tech. Rep. ·Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Uta H. Mocniak, Yukinori Morita, S. O’uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, N. Khraim	2017	3
4	Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation Solid-State Electronics ·Takashi Matsukawa, Yongxun Liu, Takahiro Mori, Yukinori Morita, Janny Ligouw, S. O’uchi, Hiroshi Fuketa, Shinji Migita, Meishoku Masahara	2017	1
5	A Closed-Form Expression for Minimum Operating Voltage of CMOS D Flip-Flop IEEE Transactions on Very Large Scale Integration (VLSI) Systems ·Hiroshi Fuketa, S. O’uchi, Takashi Matsukawa	2017	3
6	A 0.3-V 1- $\mu \text{W}$ Super-Regenerative Ultrasound Wake-Up Receiver With Power Scalability IEEE Transactions on Circuits & Systems II Express Briefs ·Hiroshi Fuketa, S. O’uchi, Takashi Matsukawa	2016	21
7	Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors Applied Physics Express ·Takashi Matsukawa, Koichi Fukuda, Yongxun Liu, Junichi Tsukada, Hiromi Yamauchi, Kazuhiko Endo, Yuki Ishikawa, S. O’uchi, Shinji Migita, Yukinori Morita, Wataru Mizubayashi, Hiroyuki Ota, Meishoku Masahara	2015	9
8	Channel shape and interpoly dielectric material effects on electrical characteristics of floating-gate-type three-dimensional fin channel flash memories Japanese Journal of Applied Physics ·Yongxun Liu, Toshihide Nabatame, Tahere heidari, Takashi Matsukawa, Kazuhiko Endo, S. O’uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Toyohiro Chikyow, Meishoku Masahara	2015	3
9	Experimental study of variability in polycrystalline and crystalline silicon channel FinFET CMOS inverters Yongxun Liu, Yohei Hori, Morifumi Ohno, Takashi Matsukawa, Kazuhiko Endo, S. O’uchi, Junichi Tsukada, H. Yamauchi, Yasuaki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara	2015	2
10	Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model Solid-State Electronics ·Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, S. O’uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota	2014	6
11	Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel Symposium on VLSI Technology ·Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, S. O’uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota	2013	23
12	Analysis of Vth flexibility in ultrathin-BOX SOI FinFETs Kazuhiko Endo, Yasuhiko Ishikawa, Yongxun Liu, Takashi Matsukawa, S. O’uchi, Junichi Tsukada, Shinji Migita, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota, H. Yamauchi, Meishoku Masahara	2013	1
13	Comparative study of tri-gate- and double-gate-type poly-Si fin-channel split-gate flash memories Yongxun Liu, T. Kamei, Takashi Matsukawa, Kazuhiko Endo, S. O’uchi, Junichi Tsukada, H. Yamauchi, Yasuaki Ishikawa, Tomohiro Hayashida, Kunihiro Sakamoto, Atsushi Ogura, Meishoku Masahara	2012	0
14	Dual metal gate FinFET integration by Ta/Mo diffusion technology for Vt reduction and multi-Vt CMOS application Solid-State Electronics ·Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, S. O’uchi, Yuki Ishikawa, Hiromi Yamauchi, Junichi Tsukada, Kenichi Ishii, Kunihiro Sakamoto, Eiichi Suzuki, Meishoku Masahara	2009	4
15	Impact of extension and source/drain resistance on FinFET performance Takashi Matsukawa, Kazuhiko Endo, Yasuhiko Ishikawa, H. Yamauchi, Yongxun Liu, S. O’uchi, Junichi Tsukada, K. Ishii, Kunihiro Sakamoto, E. Suzuki, Meishoku Masahara	2008	7
16	Threshold-Voltage Reduction of FinFETs by Ta/Mo Interdiffusion Dual Metal-Gate Technology for Low-Operating-Power Application IEEE Transactions on Electron Devices ·Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, S. O’uchi, Yasuaki Ishikawa, H. Yamauchi, Junichi Tsukada, K. Ishii, Meishoku Masahara, Kunihiro Sakamoto, E. Suzuki	2008	14
17	Flex-Pass-Gate SRAM Design for Static Noise Margin Enhancement Using FinFET-Based Technology S. O’uchi, Meishoku Masahara, Kunihiro Sakamoto, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, T. Sekigawa, Hiroki Koike, E. Suzuki	2007	15
18	Capacitance Model for Four-Terminal DG MOSFETs Annabel Cecilia Villafuerte Argüello, Мирослав Максимюк, Tadashi Nakagawa, S. O’uchi, T. Sekigawa, Takuya Tsutsumi	2006	2
19	Comprehensive analysis of variability sources of FinFET characteristics Symposium on VLSI Technology ·Takashi Matsukawa, S. O’uchi, Kazuhiko Endo, Yasuaki Ishikawa, H. Yamauchi, Yongxun Liu, Junichi Tsukada, Kunihiro Sakamoto, Meishoku Masahara	2006	40
20	Optimum Gate Workfunction for $V_{\rm th}$-Controllable Four-Terminal-Driven Double-Gate MOSFETs (4T-XMOSFETs)—Band-Edge Workfunction Versus Midgap Workfunction IEEE Transactions on Nanotechnology ·Meishoku Masahara, S. O’uchi, Yongxun Liu, Kunihiro Sakamoto, Kazuhiko Endo, Takashi Matsukawa, Toshihiro Sekigawa, Maria Berberova, Eiichi Suzuki	2006	7

About S. O’uchi

S. O’uchi is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Artificial Intelligence, Biomedical Engineering and Condensed Matter Physics, having authored 159 papers that have together received 1.4k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (143 papers), Semiconductor materials and devices (143 papers), Integrated Circuits and Semiconductor Failure Analysis (49 papers), Ferroelectric and Negative Capacitance Devices (34 papers), Silicon Carbide Semiconductor Technologies (21 papers), Low-power high-performance VLSI design (10 papers), Thin-Film Transistor Technologies (8 papers) and Nanowire Synthesis and Applications (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.3k citations), Hardware and Architecture (29 citations), Biomedical Engineering (177 citations), Materials Chemistry (111 citations) and Structural Biology (3 citations). S. O’uchi has collaborated with scholars based in Japan, South Korea and United States. Frequent co-authors include Takashi Matsukawa, Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Junichi Tsukada, Kunihiro Sakamoto, Hiromi Yamauchi, Yuki Ishikawa, Hiroyuki Ota and Wataru Mizubayashi. Their work appears in journals such as Japanese Journal of Applied Physics, IEEE Electron Device Letters, Solid-State Electronics, IEEE Transactions on Electron Devices and Applied Physics Express.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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