Hiroyuki Ota

3.5k total citations
261 papers, 2.9k citations indexed

About

Hiroyuki Ota is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Hiroyuki Ota has authored 261 papers receiving a total of 2.9k indexed citations (citations by other indexed papers that have themselves been cited), including 218 papers in Electrical and Electronic Engineering, 58 papers in Materials Chemistry and 28 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Hiroyuki Ota's work include Semiconductor materials and devices (196 papers), Advancements in Semiconductor Devices and Circuit Design (151 papers) and Ferroelectric and Negative Capacitance Devices (81 papers). Hiroyuki Ota is often cited by papers focused on Semiconductor materials and devices (196 papers), Advancements in Semiconductor Devices and Circuit Design (151 papers) and Ferroelectric and Negative Capacitance Devices (81 papers). Hiroyuki Ota collaborates with scholars based in Japan, United States and United Kingdom. Hiroyuki Ota's co-authors include Shinji Migita, Yukinori Morita, Akira Toriumi, Wataru Mizubayashi, Meishoku Masahara, Koichi Fukuda, Toshihide Nabatame, Takashi Matsukawa, Takahiro Mori and Kunihiko Iwamoto and has published in prestigious journals such as Applied Physics Letters, PLoS ONE and Journal of Applied Physics.

In The Last Decade

Hiroyuki Ota

251 papers receiving 2.8k citations

Peers

Hiroyuki Ota
Comparison fields: 5 of 108
  • Electrical and Electronic Engineering 2.2k
  • Materials Chemistry 852
  • Biomedical Engineering 395
  • Atomic and Molecular Physics, and Optics 333
  • Condensed Matter Physics 238
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Citations per field, relative to Hiroyuki Ota
Hiroyuki Ota · 1×
Citations per year, relative to Hiroyuki Ota
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Countries citing papers authored by Hiroyuki Ota

Since Specialization
Citations

This map shows the geographic impact of Hiroyuki Ota's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hiroyuki Ota with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hiroyuki Ota more than expected).

Fields of papers citing papers by Hiroyuki Ota

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hiroyuki Ota. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hiroyuki Ota. The network helps show where Hiroyuki Ota may publish in the future.

Co-authorship network of co-authors of Hiroyuki Ota

This figure shows the co-authorship network connecting the top 25 collaborators of Hiroyuki Ota. A scholar is included among the top collaborators of Hiroyuki Ota based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hiroyuki Ota. Hiroyuki Ota is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
# Work Indexed citations
1 0
2 11
3 1
4 2
5
Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology
3
6 9
7
Importance of interface engineering for synthesis of SrHfO
3
8 22
9
Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel
23
10 1
11
Extremely Scaled (~0.2 nm) Equivalent Oxide Thickness of Higher-k (k = 40) HfO₂ Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing (Special Issue : Solid State Devices and Materials (1))
1
12 19
13
Exact control of junction position and Schottky barrier height in dopant-segregated epitaxial NiSi 2 for high performance metal source/drain MOSFETs
6
14
Physical origins of mobility enhancement of Ge pMISFETs with Si passivation layers
3
15
Static Analysis of Multi-Oscillated Current Resonant Type DC-DC Converter
5
16 16
17 4
18 2
19 88
20 27

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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