Hiroyuki Ota
About
In The Last Decade
Hiroyuki Ota
251 papers receiving 2.8k citations
Peers
Comparison fields: 5 of 108
- Electrical and Electronic Engineering 2.2k
- Materials Chemistry 852
- Biomedical Engineering 395
- Atomic and Molecular Physics, and Optics 333
- Condensed Matter Physics 238
Countries citing papers authored by Hiroyuki Ota
This map shows the geographic impact of Hiroyuki Ota's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hiroyuki Ota with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hiroyuki Ota more than expected).
Fields of papers citing papers by Hiroyuki Ota
This network shows the impact of papers produced by Hiroyuki Ota. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hiroyuki Ota. The network helps show where Hiroyuki Ota may publish in the future.
Co-authorship network of co-authors of Hiroyuki Ota
This figure shows the co-authorship network connecting the top 25 collaborators of Hiroyuki Ota. A scholar is included among the top collaborators of Hiroyuki Ota based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hiroyuki Ota. Hiroyuki Ota is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 0 | |
| 2 | 11 | |
| 3 | 1 | |
| 4 | 2 | |
| 5 | Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology | 3 |
| 6 | 9 | |
| 7 | Importance of interface engineering for synthesis of SrHfO | 3 |
| 8 | 22 | |
| 9 | Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel | 23 |
| 10 | 1 | |
| 11 | Extremely Scaled (~0.2 nm) Equivalent Oxide Thickness of Higher-k (k = 40) HfO₂ Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing (Special Issue : Solid State Devices and Materials (1)) | 1 |
| 12 | 19 | |
| 13 | Exact control of junction position and Schottky barrier height in dopant-segregated epitaxial NiSi 2 for high performance metal source/drain MOSFETs | 6 |
| 14 | Physical origins of mobility enhancement of Ge pMISFETs with Si passivation layers | 3 |
| 15 | Static Analysis of Multi-Oscillated Current Resonant Type DC-DC Converter | 5 |
| 16 | 16 | |
| 17 | 4 | |
| 18 | 2 | |
| 19 | 88 | |
| 20 | 27 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.