Atsushi Ogura

4.7k total citations
464 papers, 3.7k citations indexed

About

Atsushi Ogura is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Atsushi Ogura has authored 464 papers receiving a total of 3.7k indexed citations (citations by other indexed papers that have themselves been cited), including 413 papers in Electrical and Electronic Engineering, 166 papers in Materials Chemistry and 103 papers in Biomedical Engineering. Recurrent topics in Atsushi Ogura's work include Semiconductor materials and devices (171 papers), Thin-Film Transistor Technologies (167 papers) and Silicon and Solar Cell Technologies (160 papers). Atsushi Ogura is often cited by papers focused on Semiconductor materials and devices (171 papers), Thin-Film Transistor Technologies (167 papers) and Silicon and Solar Cell Technologies (160 papers). Atsushi Ogura collaborates with scholars based in Japan, United States and United Kingdom. Atsushi Ogura's co-authors include Yoshio Ohshita, Daisuke Kosemura, Naomi Sawamoto, Cherry A. Murray, Martin F. Jarrold, Eric C. Honea, W. L. Brown, Krishnan Raghavachari, W. O. Sprenger and Michio Tajima and has published in prestigious journals such as Nature, The Journal of Chemical Physics and SHILAP Revista de lepidopterología.

In The Last Decade

Atsushi Ogura

428 papers receiving 3.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Atsushi Ogura Japan 26 2.9k 1.7k 853 650 213 464 3.7k
D. A. Buchanan United States 32 4.2k 1.5× 1.6k 0.9× 714 0.8× 441 0.7× 150 0.7× 96 4.9k
Martin M. Frank United States 39 2.8k 0.9× 2.3k 1.4× 944 1.1× 475 0.7× 85 0.4× 97 4.0k
Cary Y. Yang United States 28 1.4k 0.5× 1.4k 0.8× 614 0.7× 427 0.7× 123 0.6× 147 2.7k
Koichiro Saiki Japan 36 2.5k 0.9× 2.6k 1.5× 1.2k 1.4× 739 1.1× 101 0.5× 222 4.4k
P. Capezzuto Italy 33 2.3k 0.8× 2.3k 1.3× 523 0.6× 728 1.1× 228 1.1× 169 3.5k
Carlos Ruiz‐Vargas United States 9 1.3k 0.5× 3.1k 1.8× 783 0.9× 1.1k 1.7× 66 0.3× 13 3.6k
Gun‐Do Lee South Korea 31 1.3k 0.4× 2.5k 1.5× 448 0.5× 361 0.6× 109 0.5× 99 3.3k
F. Gourbilleau France 32 2.1k 0.7× 2.7k 1.6× 583 0.7× 1.1k 1.6× 90 0.4× 204 3.2k
Xiangang Xu China 29 1.7k 0.6× 1.6k 0.9× 1.0k 1.2× 512 0.8× 293 1.4× 296 3.2k
Oussama Moutanabbir Canada 27 1.7k 0.6× 1.0k 0.6× 862 1.0× 802 1.2× 116 0.5× 159 2.6k

Countries citing papers authored by Atsushi Ogura

Since Specialization
Citations

This map shows the geographic impact of Atsushi Ogura's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Atsushi Ogura with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Atsushi Ogura more than expected).

Fields of papers citing papers by Atsushi Ogura

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Atsushi Ogura. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Atsushi Ogura. The network helps show where Atsushi Ogura may publish in the future.

Co-authorship network of co-authors of Atsushi Ogura

This figure shows the co-authorship network connecting the top 25 collaborators of Atsushi Ogura. A scholar is included among the top collaborators of Atsushi Ogura based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Atsushi Ogura. Atsushi Ogura is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fujii, Katsushi, Atsushi Ogura, Takayo Ogawa, et al.. (2025). Evaluating Cation-Exchange Membrane Properties Affecting Polymer Electrolyte Membrane Water Electrolysis. ACS Omega. 10(10). 10425–10431.
2.
Ito, Y., et al.. (2025). Spatial correlation model for Si-rich SiGe alloys based on Raman spectra. Japanese Journal of Applied Physics. 64(6). 60904–60904.
3.
Ogura, Atsushi, et al.. (2023). Assessing hard X-ray photoelectron spectroscopy as a new evaluation method for studying protein adsorption on anisotropic hydroxyapatite ceramics model. Journal of the Ceramic Society of Japan. 132(1). 16–23. 1 indexed citations
4.
Kojima, Hideyuki, Kazuhiro Gotoh, Noritaka Usami, et al.. (2023). Evaluation of Damage in Crystalline Silicon Substrate Induced by Plasma Enhanced Chemical Vapor Deposition of Amorphous Silicon Films. ECS Journal of Solid State Science and Technology. 12(1). 15003–15003.
5.
Honda, Takayuki, et al.. (2023). Identification of Proteins Adsorbed on Hydroxyapatite Ceramics with a Preferred Orientation to a-Plane. Crystals. 13(9). 1318–1318. 5 indexed citations
6.
Ito, Yuta, et al.. (2023). Analysis of InGaAs/InP p-I-n Photodiode Failed by Electrostatic Discharge. Journal of Electronic Materials. 52(8). 5150–5158. 1 indexed citations
7.
8.
Hayashi, Yutaka, Kazuhiro Gotoh, Ryo Ozaki, et al.. (2021). Simulation study on lateral minority carrier transport in the surface inversion layer of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell. Japanese Journal of Applied Physics. 60(2). 26503–26503. 1 indexed citations
9.
Nabatame, Toshihide, Takashi Onaya, Akihiko Ohi, et al.. (2021). Comparison of characteristics of thin-film transistor with In 2 O 3 and carbon-doped In 2 O 3 channels by atomic layer deposition and post-metallization annealing in O 3. Japanese Journal of Applied Physics. 60(3). 30903–30903. 11 indexed citations
10.
Shimura, Yosuke, et al.. (2021). Thermal conductivity and inelastic X-ray scattering measurements on SiGeSn polycrystalline alloy. Japanese Journal of Applied Physics. 60(SB). SBBF11–SBBF11. 4 indexed citations
11.
Nabatame, Toshihide, Takashi Onaya, Akihiko Ohi, et al.. (2021). Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress. Japanese Journal of Applied Physics. 60(SC). SCCM01–SCCM01. 2 indexed citations
12.
Kashyap, Mrinal, Hyunju Lee, Naomi Sawamoto, et al.. (2021). Synthesis, characterization and application of intracellular Ag/AgCl nanohybrids biosynthesized in Scenedesmus sp. as neutral lipid inducer and antibacterial agent. Environmental Research. 201. 111499–111499. 19 indexed citations
13.
Arafune, Koji, Sho Kitano, Haruhiko Yoshida, Atsushi Ogura, & Yasushi Hotta. (2019). Effect of post-deposition annealing on electrical properties and structures of aluminum oxide passivation film on a crystalline silicon substrate. Japanese Journal of Applied Physics. 58(12). 125502–125502. 1 indexed citations
14.
Tajima, Michio, et al.. (2019). Effects of surface recombination and excitation power on quantitative analysis of carbon in Si using room-temperature photoluminescence after electron irradiation. Japanese Journal of Applied Physics. 58(7). 76502–76502. 4 indexed citations
15.
Nagata, Takahiro, et al.. (2019). Crystal growth of a MnS buffer layer for non-polar AlN on Si (100) deposited by radio frequency magnetron sputtering. Japanese Journal of Applied Physics. 58(SB). SBBK03–SBBK03. 1 indexed citations
16.
Tomita, Motohiro, et al.. (2019). Evaluation of thermal conductivity characteristics in Si nanowire covered with oxide by UV Raman spectroscopy. Japanese Journal of Applied Physics. 58(SD). SDDF04–SDDF04. 1 indexed citations
17.
Ohashi, T., Naomi Sawamoto, Kuniyuki Kakushima, et al.. (2016). MoS2 film formation by RF magnetron sputtering for thin film transistors. IEICE Technical Report; IEICE Tech. Rep.. 116(118). 75–78. 2 indexed citations
18.
Lee, Hyunju, Naomi Sawamoto, Koji Arafune, et al.. (2014). Detailed study of the effects of interface properties of ozone-based atomic layer deposited AlO. Japanese Journal of Applied Physics. 53(4). 2 indexed citations
19.
Ono, Haruhiko, et al.. (2013). Formation of Si. Applied Physics Express. 6(8). 2 indexed citations
20.
Kosemura, Daisuke, Masahiro Takei, Kengo Nagata, et al.. (2006). Comparative study between Si (110) and (100) substrates on mobility and velocity enhancements for short-channel highly-strained PFETs. Symposium on VLSI Technology. 14–15. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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