Hidehiro Asai

851 total citations
82 papers, 657 citations indexed

About

Hidehiro Asai is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Hidehiro Asai has authored 82 papers receiving a total of 657 indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 27 papers in Condensed Matter Physics. Recurrent topics in Hidehiro Asai's work include Semiconductor materials and devices (38 papers), Advancements in Semiconductor Devices and Circuit Design (30 papers) and Physics of Superconductivity and Magnetism (21 papers). Hidehiro Asai is often cited by papers focused on Semiconductor materials and devices (38 papers), Advancements in Semiconductor Devices and Circuit Design (30 papers) and Physics of Superconductivity and Magnetism (21 papers). Hidehiro Asai collaborates with scholars based in Japan, United States and United Kingdom. Hidehiro Asai's co-authors include Kazuo Kadowaki, M. Tachiki, Koichi Fukuda, Junichi Hattori, Kaveh Delfanazari, Richard A. Klemm, Manabu Tsujimoto, Takanari Kashiwagi, Takeo Kitamura and K. Ishida and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Hidehiro Asai

73 papers receiving 649 citations

Peers

Hidehiro Asai
Hidehiro Asai
Citations per year, relative to Hidehiro Asai Hidehiro Asai (= 1×) peers А.М. Клушин

Countries citing papers authored by Hidehiro Asai

Since Specialization
Citations

This map shows the geographic impact of Hidehiro Asai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hidehiro Asai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hidehiro Asai more than expected).

Fields of papers citing papers by Hidehiro Asai

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hidehiro Asai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hidehiro Asai. The network helps show where Hidehiro Asai may publish in the future.

Co-authorship network of co-authors of Hidehiro Asai

This figure shows the co-authorship network connecting the top 25 collaborators of Hidehiro Asai. A scholar is included among the top collaborators of Hidehiro Asai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hidehiro Asai. Hidehiro Asai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Oka, Hiroshi, et al.. (2025). Hot Carrier Degradation in Si n-MOSFETs at Cryogenic Temperatures. IEEE Journal of the Electron Devices Society. 13. 308–316.
2.
Asai, Hidehiro, et al.. (2025). Design of oxide-based tunnel FETs using amorphous IGZO and p-type oxide semiconductors. Journal of Applied Physics. 138(10).
3.
Oka, Hiroshi, Hidehiro Asai, Shota Iizuka, et al.. (2024). Neural-network-based prediction of cryogenic BSIM4 model parameters from small datasets. Japanese Journal of Applied Physics. 63(12). 12SP19–12SP19.
4.
Kobayashi, Y., Hidehiro Asai, Shota Iizuka, et al.. (2024). TCAD analysis of conditions for DIBL parameter misestimation in cryogenic MOSFETs. Japanese Journal of Applied Physics. 63(9). 94001–94001. 2 indexed citations
5.
Iizuka, Shota, Kimihiko Kato, Atsushi Yagishita, et al.. (2024). Integration of buried nanomagnet and silicon spin qubits in a one-dimensional fin structure. Japanese Journal of Applied Physics. 63(7). 74001–74001.
6.
Asai, Hidehiro, Hiroshi Fuketa, Hiroshi Oka, et al.. (2024). Neural-network-based transfer learning for predicting cryo-CMOS characteristics from small datasets. Applied Physics Express. 17(7). 74002–74002. 1 indexed citations
7.
8.
Asai, Hidehiro, et al.. (2023). Polarized terahertz electromagnetic-wave radiation from cuprate superconductor Bi2212 mesa structures. Japanese Journal of Applied Physics. 63(2). 20801–20801. 3 indexed citations
9.
Asai, Hidehiro, Shota Iizuka, Tohru Mogami, et al.. (2023). Device structure and fabrication process for silicon spin qubit realizing process-variation-robust SWAP gate operation. Japanese Journal of Applied Physics. 62(SC). SC1088–SC1088. 4 indexed citations
10.
Fukuda, Koichi, et al.. (2020). A Poisson–Schrodinger and cellular automaton coupled approach for two-dimensional electron gas transport modeling of GaN-based high mobility electron transistors. Japanese Journal of Applied Physics. 60(SB). SBBD04–SBBD04. 2 indexed citations
11.
Iizuka, Shota, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, & Takahiro Mori. (2020). Implementation of Coulomb blockade transport on a semiconductor device simulator and its application to tunnel-FET-based quantum dot devices. Japanese Journal of Applied Physics. 59(SI). SIIE02–SIIE02. 2 indexed citations
12.
Fukuda, Koichi, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu, & Tamotsu Hashizume. (2019). A time-dependent Verilog-A compact model for MOS capacitors with interface traps. Japanese Journal of Applied Physics. 58(SB). SBBD06–SBBD06. 1 indexed citations
13.
Asai, Hidehiro, Kazunobu Kojima, Shigefusa F. Chichibu, & Koichi Fukuda. (2019). Theoretical analysis of photo-recycling effect on external quantum efficiency considering spatial carrier dynamics. Japanese Journal of Applied Physics. 59(SG). SGGK02–SGGK02. 1 indexed citations
14.
Asai, Hidehiro, Takahiro Mori, Takashi Matsukawa, et al.. (2019). Steep switching less than 15 mV dec −1 in silicon-on-insulator tunnel FETs by a trimmed-gate structure. Japanese Journal of Applied Physics. 58(SB). SBBA16–SBBA16. 6 indexed citations
15.
Asai, Hidehiro, Takahiro Mori, Takashi Matsukawa, et al.. (2018). Steep switching in trimmed-gate tunnel FET. AIP Advances. 8(9). 5 indexed citations
16.
Mori, Takahiro, Hidehiro Asai, Junichi Hattori, et al.. (2017). Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology. IEICE Technical Report; IEICE Tech. Rep.. 116(448). 1–4. 3 indexed citations
17.
Asai, Hidehiro & Shiro Kawabata. (2016). Emission of Circularly Polarized Terahertz Wave From Inhomogeneous Intrinsic Josephson Junctions. IEEE Transactions on Applied Superconductivity. 26(3). 1–4. 6 indexed citations
18.
Delfanazari, Kaveh, Hidehiro Asai, Manabu Tsujimoto, et al.. (2013). Tunable terahertz emission from the intrinsic Josephson junctions in acute isosceles triangular Bi_2Sr_2CaCu_2O_8+δ mesas. Optics Express. 21(2). 2171–2171. 54 indexed citations
19.
Asai, Hidehiro, M. Tachiki, Takanari Kashiwagi, et al.. (2012). Numerical Study of Radiation Pattern from Intrinsic Josephson Junctions Attached to Finite Size Substrates. Journal of Physics Conference Series. 400(2). 22002–22002. 2 indexed citations
20.
Delfanazari, Kaveh, Hidehiro Asai, Manabu Tsujimoto, et al.. (2012). Study of coherent and continuous terahertz wave emission in equilateral triangular mesas of superconducting Bi2Sr2CaCu2O8+δ intrinsic Josephson junctions. Physica C Superconductivity. 491. 16–19. 26 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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