Takuya Tsutsumi

1.2k total citations
80 papers, 878 citations indexed

About

Takuya Tsutsumi is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Takuya Tsutsumi has authored 80 papers receiving a total of 878 indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Electrical and Electronic Engineering, 18 papers in Materials Chemistry and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Takuya Tsutsumi's work include Semiconductor materials and devices (26 papers), Radio Frequency Integrated Circuit Design (22 papers) and Advancements in Semiconductor Devices and Circuit Design (20 papers). Takuya Tsutsumi is often cited by papers focused on Semiconductor materials and devices (26 papers), Radio Frequency Integrated Circuit Design (22 papers) and Advancements in Semiconductor Devices and Circuit Design (20 papers). Takuya Tsutsumi collaborates with scholars based in Japan, South Korea and United States. Takuya Tsutsumi's co-authors include Hideaki Matsuzaki, E. Kuramoto, Hiroki Sugiyama, Hiroshi Hamada, Hideyuki Nosaka, Kenichi Okada, Kazuki Maruta, Yu Nakayama, Ibrahim Abdo and Yasushi Kamimura and has published in prestigious journals such as Scientific Reports, IEEE Access and IEEE Journal of Solid-State Circuits.

In The Last Decade

Takuya Tsutsumi

74 papers receiving 838 citations

Peers

Countries citing papers authored by Takuya Tsutsumi

Since Specialization

Citations

This map shows the geographic impact of Takuya Tsutsumi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Takuya Tsutsumi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Takuya Tsutsumi more than expected).

Fields of papers citing papers by Takuya Tsutsumi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Takuya Tsutsumi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Takuya Tsutsumi. The network helps show where Takuya Tsutsumi may publish in the future.

Co-authorship network of co-authors of Takuya Tsutsumi

This figure shows the co-authorship network connecting the top 25 collaborators of Takuya Tsutsumi. A scholar is included among the top collaborators of Takuya Tsutsumi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Takuya Tsutsumi. Takuya Tsutsumi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Electrical properties of unintentionally doped β-Ga₂O₃ (010) thin films grown by a low-pressure hot-wall metalorganic chemical vapor deposition 2024 ·Japanese Journal of Applied Physics ·(unknown), (unknown), Zhenwei Wang, (unknown), (unknown), (unknown), Takuya Tsutsumi, Yoshinao Kumagai, Masataka Higashiwaki	4
2	300-GHz 160-Gb/s InP-HEMT Wireless Front-End With Fully Differential Architecture 2024 ·Hiroshi Hamada, Ibrahim Abdo, Takuya Tsutsumi, (unknown)	7
3	Systematic Study and Review of InP‐based Tera‐Hertz‐ICs Fabrication Process Technology for Beyond 5G/6G Wireless Communication Networks 2023 ·physica status solidi (a) ·Takuya Tsutsumi, Hiroki Sugiyama, Hiroshi Hamada, Teruo Jyo, (unknown), Takuya Hoshi, Hiroyuki Takahashi, Fumito Nakajima	4
4	Sub-50 nm Terahertz In_0.8Ga_0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications 2023 ·IEEE Transactions on Electron Devices ·(unknown), (unknown), (unknown), Sumin Choi, (unknown), (unknown), (unknown), (unknown), (unknown), Tae‐Woo Kim, Sang-Kuk Kim, (unknown), (unknown), Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae‐Hak Lee, Dae-Hyun Kim	10
5	220-to-320-GHz Fundamental Mixer in 60-nm InP HEMT Technology Achieving 240-Gbps Dual-Band Data Transmission 2023 ·IEEE Transactions on Microwave Theory and Techniques ·Teruo Jyo, Hiroshi Hamada, Takuya Tsutsumi, Ibrahim Abdo, (unknown), Daisuke Kitayama, Munehiko Nagatani, (unknown)	11
6	Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors 2023 ·Micromachines ·(unknown), (unknown), Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae‐Hak Lee, Dae-Hyun Kim	3
7	Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment 2023 ·IEEE Transactions on Electron Devices ·(unknown), (unknown), (unknown), (unknown), Chu‐Young Cho, (unknown), Sang‐Tae Lee, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Dae-Hyun Kim, Tae‐Woo Kim	10
8	Physics-Based Analytical Channel Charge Model of In _x Ga_1-xAs/In_0.52Al_0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes 2022 ·IEEE Journal of the Electron Devices Society ·(unknown), (unknown), (unknown), (unknown), Tae‐Woo Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Sung‐Ho Hahm, Jae‐Hak Lee, Dae-Hyun Kim	1
9	Comprehensive modeling of the extrinsic transconductance for In Ga As/In Al As quantum-well high-electron-mobility transistors 2022 ·Solid-State Electronics ·(unknown), (unknown), (unknown), Wan‐Su Park, (unknown), (unknown), Tae‐Woo Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Dae-Hyun Kim	0
10	A New Methodology to Analyze Carrier Transport Properties for In_xGa_1−xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation 2022 ·IEEE Electron Device Letters ·(unknown), (unknown), (unknown), (unknown), (unknown), (unknown), Tae‐Woo Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae‐Hak Lee, Dae-Hyun Kim	1
11	A Comprehensive Benchmarking Method for the Net Combination of Mobility Enhancement and Density-of-States Bottleneck 2021 ·IEEE Electron Device Letters ·(unknown), (unknown), (unknown), (unknown), (unknown), (unknown), Tae‐Woo Kim, Jae‐Hak Lee, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Dae-Hyun Kim	0
12	220–325-GHz 25-dB-Gain Differential Amplifier With High Common-Mode-Rejection Circuit in 60-nm InP-HEMT Technology 2021 ·IEEE Microwave and Wireless Components Letters ·Hiroshi Hamada, Takuya Tsutsumi, (unknown), Hideaki Matsuzaki, Hiroki Sugiyama, Hiroyuki Takahashi, Hideyuki Nosaka	16
13	300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers 2020 ·IEEE Journal of Solid-State Circuits ·Hiroshi Hamada, Takuya Tsutsumi, Hideaki Matsuzaki, Takuya Fujimura, Ibrahim Abdo, Atsushi Shirane, Kenichi Okada, (unknown), Ho-Jin Song, Hiroki Sugiyama, Hideyuki Nosaka	137
14	Impact of the Source-to-Drain Spacing on the DC and RF Characteristics of InGaAs/InAlAs High-Electron Mobility Transistors 2018 ·IEEE Electron Device Letters ·(unknown), (unknown), (unknown), (unknown), Jung‐Hee Lee, Tae‐Woo Kim, Dae-Hyun Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki	14
15	<inline-formula> <tex-math notation="LaTeX">${L}_{{g}} = {87}$ </tex-math> </inline-formula>nm InAlAs/InGaAs High-Electron- Mobility Transistors With a <italic>g</italic> _{m_max} of 3 S/mm and <inline-formula> <tex-math notation="LaTeX">$f_{{T}}$ </tex-math> </inline-formula> of 559 GHz 2018 ·IEEE Electron Device Letters ·(unknown), (unknown), (unknown), (unknown), Jung‐Hee Lee, Tae‐Woo Kim, Dae-Hyun Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki	29
16	Capacitance Model for Four-Terminal DG MOSFETs 2006 ·(unknown), (unknown), Tadashi Nakagawa, S. O’uchi, T. Sekigawa, Takuya Tsutsumi	2
17	Compact model for ultra-short channel four-terminal DG MOSFETs for exploring circuit characteristics 2005 ·TechConnect Briefs ·(unknown), (unknown), Tadashi Nakagawa, T. Sekigawa, E. Suzuki, Takuya Tsutsumi	1
18	Improved Compact Model for Four-Terminal DG MOSFETs 2004 ·TechConnect Briefs ·(unknown), (unknown), Tadashi Nakagawa, T. Sekigawa, E. Suzuki, Takuya Tsutsumi	3
19	Primary Consideration on Compact Modeling of DG MOSFETs with Four-terminal Operation Mode 2003 ·TechConnect Briefs ·(unknown), Tadashi Nakagawa, T. Sekigawa, E. Suzuki, Takuya Tsutsumi	7
20	Computer Simulation of Fundamental Behaviors of Point Defects, Clusters and Interaction with Dislocations in Fe and Ni 2002 ·Computer Modeling in Engineering & Sciences ·E. Kuramoto, Kazuhito Ohsawa, Takuya Tsutsumi	2

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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