Mats O. Andersson

441 total citations
20 papers, 358 citations indexed

About

Mats O. Andersson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Mats O. Andersson has authored 20 papers receiving a total of 358 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. Recurrent topics in Mats O. Andersson's work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). Mats O. Andersson is often cited by papers focused on Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). Mats O. Andersson collaborates with scholars based in Sweden, United States and Russia. Mats O. Andersson's co-authors include Olof Engström, K.R. Farmer, Per Lundgren, G. Andersson, V. V. Afanas’ev, Stefan Bengtsson, A. Stesmans, S. Norrman, Anders Lundgren and Ylva Bäcklund and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Mats O. Andersson

20 papers receiving 341 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Mats O. Andersson Sweden 12 340 97 79 30 17 20 358
Paul Vande Voorde United States 11 537 1.6× 103 1.1× 84 1.1× 24 0.8× 29 1.7× 25 555
E. Luckowski United States 9 309 0.9× 164 1.7× 47 0.6× 31 1.0× 19 1.1× 23 324
Arito Ogawa Japan 10 404 1.2× 93 1.0× 118 1.5× 42 1.4× 22 1.3× 30 421
G.J. Hu United States 8 537 1.6× 71 0.7× 83 1.1× 12 0.4× 20 1.2× 12 543
D. B. Aldrich United States 8 212 0.6× 245 2.5× 127 1.6× 21 0.7× 17 1.0× 18 294
Y. Ma United States 9 307 0.9× 37 0.4× 147 1.9× 37 1.2× 13 0.8× 17 320
Akimasa Kinoshita Japan 12 375 1.1× 128 1.3× 48 0.6× 43 1.4× 15 0.9× 40 407
T. Egilsson Sweden 8 291 0.9× 63 0.6× 65 0.8× 52 1.7× 17 1.0× 23 313
Jiang Lu United States 11 349 1.0× 33 0.3× 129 1.6× 55 1.8× 14 0.8× 19 375
Anyan Du China 8 179 0.5× 59 0.6× 70 0.9× 34 1.1× 41 2.4× 36 213

Countries citing papers authored by Mats O. Andersson

Since Specialization
Citations

This map shows the geographic impact of Mats O. Andersson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mats O. Andersson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mats O. Andersson more than expected).

Fields of papers citing papers by Mats O. Andersson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mats O. Andersson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mats O. Andersson. The network helps show where Mats O. Andersson may publish in the future.

Co-authorship network of co-authors of Mats O. Andersson

This figure shows the co-authorship network connecting the top 25 collaborators of Mats O. Andersson. A scholar is included among the top collaborators of Mats O. Andersson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mats O. Andersson. Mats O. Andersson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lundgren, Per, et al.. (1997). Oxide Thickness‐ and Bias‐Dependence of Postmetallization Annealing of Interface States in Metal‐Oxide‐Silicon Diodes. Journal of The Electrochemical Society. 144(5). 1866–1869. 5 indexed citations
2.
Lundgren, Per & Mats O. Andersson. (1996). Temperature dependence confirmation of tunneling through 2–6 nm silicon dioxide. Solid-State Electronics. 39(8). 1143–1147. 9 indexed citations
3.
Farmer, K.R., et al.. (1996). Weak fluence dependence of charge generation in ultra-thin oxides on silicon. Applied Surface Science. 104-105. 369–372. 3 indexed citations
4.
Afanas’ev, V. V., A. Stesmans, & Mats O. Andersson. (1996). Electron states and microstructure of thina-C:H layers. Physical review. B, Condensed matter. 54(15). 10820–10826. 41 indexed citations
5.
Bengtsson, Stefan, et al.. (1995). The influence of surface micro-roughness on bondability. Chalmers Publication Library (Chalmers University of Technology). 1 indexed citations
6.
Afanas’ev, V. V., Per Ericsson, Stefan Bengtsson, & Mats O. Andersson. (1995). Wafer bonding induced degradation of thermal silicon dioxide layers on silicon. Applied Physics Letters. 66(13). 1653–1655. 4 indexed citations
7.
Bäcklund, Ylva, et al.. (1995). The Effects of  HF  Cleaning Prior to Silicon Wafer Bonding. Journal of The Electrochemical Society. 142(4). 1297–1303. 18 indexed citations
8.
Lundgren, Per, Mats O. Andersson, K.R. Farmer, & Olof Engström. (1995). Instability of charged defects in electrically stressed metal-tunnel oxide-silicon diodes. Journal of Non-Crystalline Solids. 187. 140–143. 3 indexed citations
9.
Lundgren, Per, Mats O. Andersson, K.R. Farmer, & Olof Engström. (1995). Electrical instability of ultrathin thermal oxides on silicon. Microelectronic Engineering. 28(1-4). 67–70. 18 indexed citations
10.
Andersson, Mats O., Anders Lundgren, & Per Lundgren. (1994). Surface-potential dependence of interface-state passivation in metal–tunnel-oxide–silicon diodes. Physical review. B, Condensed matter. 50(16). 11666–11676. 10 indexed citations
11.
Lundgren, Per, Mats O. Andersson, & K.R. Farmer. (1993). Post-metallization annealing of metal-tunnel oxide-silicon diodes. Journal of Applied Physics. 74(7). 4780–4782. 24 indexed citations
12.
Andersson, Mats O., Per Lundgren, Olof Engström, & K.R. Farmer. (1993). Annealing and charging of slow and fast states in metal-tunnel oxide-silicon diodes measured using capacitance-voltage and current-voltage techniques. Microelectronic Engineering. 22(1-4). 235–238. 11 indexed citations
13.
Andersson, Mats O., K.R. Farmer, & Olof Engström. (1992). Negative charging in ultrathin metal-oxide-silicon tunnel diodes. Journal of Applied Physics. 71(4). 1846–1852. 21 indexed citations
14.
Engström, Olof, et al.. (1992). Electrical Characterization of Bonding Interfaces. Journal of The Electrochemical Society. 139(12). 3638–3644. 12 indexed citations
15.
Bengtsson, Stefan, G. Andersson, Mats O. Andersson, & Olof Engström. (1992). The bonded unipolar silicon-silicon junction. Journal of Applied Physics. 72(1). 124–140. 34 indexed citations
16.
Andersson, G., Mats O. Andersson, & Olof Engström. (1992). Discrete conductance fluctuations in silicon emitter junctions due to defect clustering and evidence for structural changes by high-energy electron irradiation and annealing. Journal of Applied Physics. 72(7). 2680–2691. 29 indexed citations
17.
Farmer, K.R., Mats O. Andersson, & Olof Engström. (1992). Time-dependent positive charge generation in very thin silicon oxide dielectrics. Applied Physics Letters. 60(6). 730–732. 41 indexed citations
18.
Farmer, K.R., Mats O. Andersson, & Olof Engström. (1991). Tunnel electron induced charge generation in very thin silicon oxide dielectrics. Applied Physics Letters. 58(23). 2666–2668. 32 indexed citations
19.
Andersson, Mats O., et al.. (1990). Model based on trap-assisted tunneling for two-level current fluctuations in submicrometer metal–silicon-dioxide–silicon diodes. Physical review. B, Condensed matter. 41(14). 9836–9842. 36 indexed citations
20.
Andersson, Mats O. & Olof Engström. (1989). Atomic relaxation of SiSiO2 interface states measured by a photo-depopulation technique. Applied Surface Science. 39(1-4). 289–300. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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