Masihhur R. Laskar

903 total citations
19 papers, 809 citations indexed

About

Masihhur R. Laskar is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Masihhur R. Laskar has authored 19 papers receiving a total of 809 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Condensed Matter Physics, 10 papers in Electronic, Optical and Magnetic Materials and 8 papers in Electrical and Electronic Engineering. Recurrent topics in Masihhur R. Laskar's work include GaN-based semiconductor devices and materials (11 papers), Ga2O3 and related materials (9 papers) and 2D Materials and Applications (5 papers). Masihhur R. Laskar is often cited by papers focused on GaN-based semiconductor devices and materials (11 papers), Ga2O3 and related materials (9 papers) and 2D Materials and Applications (5 papers). Masihhur R. Laskar collaborates with scholars based in United States, India and South Korea. Masihhur R. Laskar's co-authors include Lu Ma, Siddharth Rajan, Yiying Wu, Digbijoy N. Nath, David H. K. Jackson, Robert J. Hamers, T. F. Kuech, Dane Morgan, Shenzhen Xu and Wu Lu and has published in prestigious journals such as Applied Physics Letters, ACS Applied Materials & Interfaces and Journal of Physics D Applied Physics.

In The Last Decade

Masihhur R. Laskar

19 papers receiving 800 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Masihhur R. Laskar United States 10 542 478 156 110 96 19 809
Shaowen Xu China 13 242 0.4× 253 0.5× 247 1.6× 49 0.4× 29 0.3× 36 523
G. Lian United States 10 231 0.4× 334 0.7× 93 0.6× 34 0.3× 187 1.9× 17 481
Michael Küpers Germany 11 604 1.1× 525 1.1× 99 0.6× 27 0.2× 55 0.6× 20 742
Kehua Zhong China 13 294 0.5× 318 0.7× 101 0.6× 34 0.3× 20 0.2× 48 516
Yurong Yang China 11 246 0.5× 164 0.3× 167 1.1× 61 0.6× 75 0.8× 34 402
Yunwei Ma United States 16 335 0.6× 502 1.1× 398 2.6× 421 3.8× 58 0.6× 27 817
Soumyadeep Sinha South Korea 17 510 0.9× 609 1.3× 203 1.3× 17 0.2× 33 0.3× 25 769
Mohammad Noor‐A‐Alam South Korea 13 499 0.9× 285 0.6× 92 0.6× 56 0.5× 152 1.6× 17 600
Kamal H. Baloch United States 4 159 0.3× 170 0.4× 136 0.9× 42 0.4× 63 0.7× 6 365
Guozhen Liu China 10 194 0.4× 172 0.4× 101 0.6× 77 0.7× 121 1.3× 16 368

Countries citing papers authored by Masihhur R. Laskar

Since Specialization
Citations

This map shows the geographic impact of Masihhur R. Laskar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Masihhur R. Laskar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Masihhur R. Laskar more than expected).

Fields of papers citing papers by Masihhur R. Laskar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Masihhur R. Laskar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Masihhur R. Laskar. The network helps show where Masihhur R. Laskar may publish in the future.

Co-authorship network of co-authors of Masihhur R. Laskar

This figure shows the co-authorship network connecting the top 25 collaborators of Masihhur R. Laskar. A scholar is included among the top collaborators of Masihhur R. Laskar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Masihhur R. Laskar. Masihhur R. Laskar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Laskar, Masihhur R., Lu Ma, Santhakumar Kannappan, et al.. (2022). Temperature dependent carrier transport in few-layered MoS2: from hopping to band transport. Journal of Physics D Applied Physics. 55(19). 195109–195109. 3 indexed citations
2.
Laskar, Masihhur R., David H. K. Jackson, Shenzhen Xu, et al.. (2017). Atomic Layer Deposited MgO: A Lower Overpotential Coating for Li[Ni0.5Mn0.3Co0.2]O2 Cathode. ACS Applied Materials & Interfaces. 9(12). 11231–11239. 121 indexed citations
3.
Jackson, David H. K., Masihhur R. Laskar, Shenzhen Xu, et al.. (2016). Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 34(3). 40 indexed citations
4.
Laskar, Masihhur R., David H. K. Jackson, Yingxin Guan, et al.. (2016). Atomic Layer Deposition of Al2O3–Ga2O3 Alloy Coatings for Li[Ni0.5Mn0.3Co0.2]O2 Cathode to Improve Rate Performance in Li-Ion Battery. ACS Applied Materials & Interfaces. 8(16). 10572–10580. 59 indexed citations
5.
Sarwar, Adil, et al.. (2015). Molecular beam epitaxy of InN nanowires on Si. Journal of Crystal Growth. 428. 59–70. 9 indexed citations
6.
Laskar, Masihhur R., Digbijoy N. Nath, Lu Ma, et al.. (2014). p-type doping of MoS2 thin films using Nb. Applied Physics Letters. 104(9). 92104–92104. 271 indexed citations
7.
Wang, Yuji, et al.. (2014). 1/f hopping noise in molybdenum disulphide. 5. 59–60. 1 indexed citations
8.
Shah, A. P., et al.. (2013). Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl3 pretreatment in Cl2/Ar plasma chemistry. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 31(6). 13 indexed citations
9.
Laskar, Masihhur R., Santino D. Carnevale, Adil Sarwar, et al.. (2013). Molecular Beam Epitaxy of Graded-Composition InGaN Nanowires. Journal of Electronic Materials. 42(5). 863–867. 10 indexed citations
10.
Shah, A. P., et al.. (2013). Inductively coupled plasma reactive ion etching of III-nitride semiconductors. AIP conference proceedings. 494–495. 3 indexed citations
11.
Laskar, Masihhur R., Lu Ma, Santhakumar Kannappan, et al.. (2013). Large area single crystal (0001) oriented MoS2. Applied Physics Letters. 102(25). 197 indexed citations
12.
Wang, Yuji, Masihhur R. Laskar, Lu Ma, et al.. (2013). Low frequency noise in chemical vapor deposited MoS<inf>2</inf>. 13. 1–3. 3 indexed citations
13.
Laskar, Masihhur R., A. Azizur Rahman, Ashish Arora, et al.. (2011). Anisotropic structural and optical properties of a-plane (112¯) AlInN nearly-lattice-matched to GaN. Applied Physics Letters. 98(18). 18 indexed citations
14.
Laskar, Masihhur R., Ashish Arora, A. P. Shah, et al.. (2011). Polarization sensitive solar-blind detector based on a-plane AlGaN. 37–38. 2 indexed citations
15.
Laskar, Masihhur R., Tapas Ganguli, A. Azizur Rahman, et al.. (2010). MOVPE growth and characterization of a ‐plane AlGaN over the entire composition range. physica status solidi (RRL) - Rapid Research Letters. 4(7). 163–165. 18 indexed citations
16.
Laskar, Masihhur R., Abdul Kadir, A. Azizur Rahman, et al.. (2010). Optimization of a-plane InN grown via MOVPE on a-plane GaN buffer layers on r-plane sapphire. Journal of Crystal Growth. 312(14). 2033–2037. 7 indexed citations
17.
Laskar, Masihhur R., Tapas Ganguli, Nirupam Hatui, et al.. (2010). High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers. Journal of Crystal Growth. 315(1). 208–210. 17 indexed citations
18.
Laskar, Masihhur R., Tapas Ganguli, Abdul Kadir, et al.. (2010). Influence of buffer layers on the microstructure of MOVPE grown a-plane InN. Journal of Crystal Growth. 315(1). 233–237. 9 indexed citations
19.
Lobo‐Ploch, Neysha, Abdul Kadir, Masihhur R. Laskar, et al.. (2008). Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy. Journal of Crystal Growth. 310(23). 4747–4750. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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