J.H. Neave

6.2k total citations · 2 hit papers
111 papers, 4.8k citations indexed

About

J.H. Neave is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Surfaces, Coatings and Films. According to data from OpenAlex, J.H. Neave has authored 111 papers receiving a total of 4.8k indexed citations (citations by other indexed papers that have themselves been cited), including 90 papers in Atomic and Molecular Physics, and Optics, 50 papers in Electrical and Electronic Engineering and 33 papers in Surfaces, Coatings and Films. Recurrent topics in J.H. Neave's work include Semiconductor Quantum Structures and Devices (59 papers), Electron and X-Ray Spectroscopy Techniques (31 papers) and Advanced Chemical Physics Studies (27 papers). J.H. Neave is often cited by papers focused on Semiconductor Quantum Structures and Devices (59 papers), Electron and X-Ray Spectroscopy Techniques (31 papers) and Advanced Chemical Physics Studies (27 papers). J.H. Neave collaborates with scholars based in United Kingdom, Finland and Netherlands. J.H. Neave's co-authors include B.A. Joyce, Peter J. Dobson, B.A. Joyce, Nicholas G. Norton, P.K. Larsen, Jing Zhang, T. Shitara, J. F. van der Veen, J. Zhang and Jianping Zhang and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J.H. Neave

110 papers receiving 4.5k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Dynamics of film growth of GaAs by MBE from Rheed observations

1983 734 citations J.H. Neave, B.A. Joyce et al. Applied Physics A profile →
Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements

1985 614 citations J.H. Neave, Peter J. Dobson et al. Applied Physics Letters profile →

Peers

Countries citing papers authored by J.H. Neave

Since Specialization

Citations

This map shows the geographic impact of J.H. Neave's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.H. Neave with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.H. Neave more than expected).

Fields of papers citing papers by J.H. Neave

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.H. Neave. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.H. Neave. The network helps show where J.H. Neave may publish in the future.

Co-authorship network of co-authors of J.H. Neave

This figure shows the co-authorship network connecting the top 25 collaborators of J.H. Neave. A scholar is included among the top collaborators of J.H. Neave based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.H. Neave. J.H. Neave is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Phosphorus incorporation during InP(001) homoepitaxial growth by solid source molecular beam epitaxy 2003 ·Surface Science ·(unknown), Eng Soon Tok, J.H. Neave, T.S. Jones	2
2	A model for the appearance of chevrons on RHEED patterns from InAs quantum dots 2001 ·Surface Science ·D. W. Pashley, J.H. Neave, B.A. Joyce	29
3	Surface Contrast in Two Dimensionally Nucleated Misfit Dislocations in InAs/GaAs(110) Heteroepitaxy 1997 ·Physical Review Letters ·J. G. Belk, J. L. Sudijono, (unknown), J.H. Neave, T. S. Jones, B.A. Joyce	85
4	Arsenic incorporation kinetics in GaAs(001) homoepitaxy revisited 1997 ·Surface Science ·Eng Soon Tok, J.H. Neave, J. Zhang, B.A. Joyce, T.S. Jones	72
5	Influence of arsenic incorporation on surface morphology and Si doping in GaAs(110) homoepitaxy 1997 ·Microelectronics Journal ·E. S. Tok, J.H. Neave, M.R. Fahy, Francesco Allegretti, J. Zhang, T.S. Jones, B.A. Joyce	11
6	Mechanisms of layer growth during molecular beam epitaxy of semiconductor films 1995 ·Materials Science and Engineering B ·B.A. Joyce, T. Shitara, M.R. Fahy, K. Sato, J.H. Neave, (unknown), Itaru Kamiya, (unknown)	3
7	Differences between As2 and As4 in the homoepitaxial growth of GaAs(110) by molecular beam epitaxy 1995 ·Applied Physics Letters ·D. M. Holmes, J. G. Belk, J. Sudijono, J.H. Neave, T. S. Jones, B.A. Joyce	19
8	Reflection high energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs(110) films 1993 ·Applied Physics Letters ·J.H. Neave, Jianping Zhang, (unknown), (unknown), B.A. Joyce	15
9	Incorporation of silicon during MBE growth of GaAs on (111)A substrates 1993 ·Journal of Crystal Growth ·M.R. Fahy, J.H. Neave, M. J. Ashwin, R. Murray, R. C. Newman, B.A. Joyce, Yutaka Kadoya, H. Sakaki	12
10	In adatom migration studies by reflection high-energy electron diffraction oscillations on vicinal InAs(001) surfaces 1993 ·Journal of Applied Physics ·H. Toyoshima, T. Shitara, (unknown), Jianping Zhang, J.H. Neave, B.A. Joyce	14
11	Optical second harmonic generation studies of the nature of the oxide-covered and clean c(4 × 4) and (2 × 4) reconstructed GaAs(001) surfaces 1993 ·Surface Science Letters ·S.R. Armstrong, R. D. Hoare, Martyn E. Pemble, Ian M. Povey, Anne Stafford, A.G. Taylor, B.A. Joyce, J.H. Neave, (unknown)	2
12	Surface relaxation kinetics and growth interruption effects in GaAs/AlAs single quantum wells 1993 ·Journal of Crystal Growth ·(unknown), (unknown), R. Murray, J.H. Neave, B.A. Joyce	4
13	Morphological model of reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on GaAs(001) 1992 ·Applied Physics Letters ·T. Shitara, Dimitri D. Vvedensky, Mark Richard Wilby, J. Zhang, J.H. Neave, B.A. Joyce	47
14	Dynamics and kinetics of MBE growth 1991 ·Journal of Crystal Growth ·B.A. Joyce, (unknown), T. Shitara, J.H. Neave, A.G. Taylor, S.R. Armstrong, Martyn E. Pemble, C. T. Foxon	31
15	The application of RHEED intensity effects to interrupted growth and interface formation during MBE growth of GaAs/(Al, Ga)As structures 1988 ·Applied Physics A ·B.A. Joyce, Jianping Zhang, J.H. Neave, Peter J. Dobson	23
16	Surface and interface phonon and plasmon excitations in iii-v semiconductor materials 1987 ·Journal of Electron Spectroscopy and Related Phenomena ·R.G. Egdell, Wendy R. Flavell, (unknown), R. A. Stradling, B.A. Joyce, J.H. Neave	17
17	A General Treatment of Antiphase Domain Formation and Identification at Polar-Nonpolar Semiconductor Interfaces. 1983 ·MRS Proceedings ·R.C. Pond, J. P. Gowers, D. B. Holt, B.A. Joyce, J.H. Neave, P.K. Larsen	7
18	Temporal intensity variations in RHEED patterns during film growth of GaAs by MBE 1983 ·Vacuum ·Peter J. Dobson, Nicholas G. Norton, J.H. Neave, B.A. Joyce	23
19	Reply to comments on the interaction of oxygen with Si (111) surfaces 1972 ·Surface Science ·B.A. Joyce, J.H. Neave	9
20	The dependence of Auger electron yield on primary beam energy at normal and glancing incidence 1972 ·Surface Science ·J.H. Neave, C. T. Foxon, B.A. Joyce	42

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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