J. C. Galzerani

850 total citations
56 papers, 683 citations indexed

About

J. C. Galzerani is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, J. C. Galzerani has authored 56 papers receiving a total of 683 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Atomic and Molecular Physics, and Optics, 36 papers in Electrical and Electronic Engineering and 28 papers in Materials Chemistry. Recurrent topics in J. C. Galzerani's work include Semiconductor Quantum Structures and Devices (36 papers), Semiconductor materials and devices (17 papers) and Semiconductor materials and interfaces (15 papers). J. C. Galzerani is often cited by papers focused on Semiconductor Quantum Structures and Devices (36 papers), Semiconductor materials and devices (17 papers) and Semiconductor materials and interfaces (15 papers). J. C. Galzerani collaborates with scholars based in Brazil, Russia and Germany. J. C. Galzerani's co-authors include Yu. A. Pusep, Adenilson J. Chiquito, S.W. da Silva, P. Basmaji, S. Mergulhão, N. T. Moshegov, Ariano De Giovanni Rodrigues, Ram S. Katiyar, A. I. Toropov and D. Lubyshev and has published in prestigious journals such as Physical Review Letters, SHILAP Revista de lepidopterología and Physical review. B, Condensed matter.

In The Last Decade

J. C. Galzerani

55 papers receiving 677 citations

Peers

J. C. Galzerani
E. P. Kvam United States
C. Pelosi Italy
F. Alsina Spain
S. Öberg Sweden
S. Bénet France
Mahanim Omar Malaysia
R. L. Aggarwal United States
Marcel Mohr Germany
E. P. Kvam United States
J. C. Galzerani
Citations per year, relative to J. C. Galzerani J. C. Galzerani (= 1×) peers E. P. Kvam

Countries citing papers authored by J. C. Galzerani

Since Specialization
Citations

This map shows the geographic impact of J. C. Galzerani's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. C. Galzerani with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. C. Galzerani more than expected).

Fields of papers citing papers by J. C. Galzerani

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. C. Galzerani. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. C. Galzerani. The network helps show where J. C. Galzerani may publish in the future.

Co-authorship network of co-authors of J. C. Galzerani

This figure shows the co-authorship network connecting the top 25 collaborators of J. C. Galzerani. A scholar is included among the top collaborators of J. C. Galzerani based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. C. Galzerani. J. C. Galzerani is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pusep, Yu. A., et al.. (2006). Miniband effect on optical vibrations in short-periodInxGa1xAsInPsuperlattices. Physical Review B. 73(23). 3 indexed citations
2.
Pusep, Yu. A., Ariano De Giovanni Rodrigues, J. C. Galzerani, D. Comedi, & Ray LaPierre. (2006). Evidence of the miniband formation in InGaAs/InP superlattices. Brazilian Journal of Physics. 36(3b). 905–907. 1 indexed citations
3.
Pusep, Yu. A., et al.. (2005). Coherence of Elementary Excitations in a Disordered Electron System. Physical Review Letters. 94(13). 136407–136407. 2 indexed citations
4.
Vilcarromero, J., et al.. (2004). The evolution of arsenic excess induced by thermal annealing in arsenic-rich Ga1-xAsx films. Applied Physics A. 80(2). 267–269. 9 indexed citations
5.
Milekhin, A. G., A. I. Toropov, A. K. Bakarov, et al.. (2004). Vibrational spectroscopy of InAs and AlAs quantum dot structures. Physica E Low-dimensional Systems and Nanostructures. 21(2-4). 241–246. 3 indexed citations
6.
Chiquito, Adenilson J., Yu. A. Pusep, S. Mergulhão, & J. C. Galzerani. (2002). Capacitance-voltage characteristics of InAs dots: a simple model. Brazilian Journal of Physics. 32(3). 784–789. 1 indexed citations
7.
Chiquito, Adenilson J., Yu. A. Pusep, S. Mergulhão, & J. C. Galzerani. (2002). Carrier confinement in an ultrathin barrier GaAs/AlAs superlattice probed by capacitance–voltage measurements. Physica E Low-dimensional Systems and Nanostructures. 13(1). 36–42. 9 indexed citations
8.
Mosca, D. H., W. H. Schreiner, I. Mazzaro, et al.. (2002). Chemical and structural aspects of annealed ZnSe/GaAs(001) heterostructures. Journal of Applied Physics. 92(7). 3569–3572. 11 indexed citations
9.
Pusep, Yu. A., et al.. (2001). Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy. Physica E Low-dimensional Systems and Nanostructures. 10(4). 587–592. 3 indexed citations
10.
Chiquito, Adenilson J., Yu. A. Pusep, S. Mergulhão, J. C. Galzerani, & N. T. Moshegov. (2000). Effect of photogenerated holes on capacitance-voltage measurements in InAs/GaAs self-assembled quantum dots. Physical review. B, Condensed matter. 61(7). 4481–4484. 10 indexed citations
11.
Pusep, Yu. A., et al.. (1999). Raman study of the topology of InAs/GaAs self-assembled quantum dots. Journal of Applied Physics. 86(8). 4387–4389. 11 indexed citations
12.
Silva, S.W. da, J. C. Galzerani, D. Lubyshev, & P. Basmaji. (1998). Surface phonon observed in GaAs wire crystals grown on porous Si. Journal of Physics Condensed Matter. 10(43). 9687–9690. 20 indexed citations
13.
Pusep, Yu. A., S.W. da Silva, J. C. Galzerani, et al.. (1998). Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots. Physical review. B, Condensed matter. 58(4). R1770–R1773. 46 indexed citations
14.
Silva, S.W. da, D. Lubyshev, P. Basmaji, et al.. (1997). Characterization of GaAs wire crystals grown on porous silicon by Raman scattering. Journal of Applied Physics. 82(12). 6247–6250. 18 indexed citations
15.
Pusep, Yu. A., J. C. Galzerani, S.W. da Silva, et al.. (1996). Raman study of Fano-like electron-phonon coupling in δ-doping GaAs superlattices. Physical review. B, Condensed matter. 54(19). 13927–13931. 7 indexed citations
16.
Pusep, Yu. A., et al.. (1996). Fourier-transform infrared and Raman spectroscopies of plasmon anisotropy in heavily doped GaAs/AlAs superlattices. Journal of Applied Physics. 79(10). 8024–8029. 3 indexed citations
17.
Silva, José Humberto Dias da, S.W. da Silva, & J. C. Galzerani. (1995). Crystallization process of amorphous GaSb films studied by Raman spectroscopy. Journal of Applied Physics. 77(8). 4044–4048. 25 indexed citations
18.
Oliveira, José Brás Barreto de, et al.. (1989). Properties of Au-Zn Ohmic contacts to p-GaSb. Journal of Applied Physics. 66(11). 5484–5487. 8 indexed citations
19.
Galzerani, J. C. & Ram S. Katiyar. (1988). Temperature‐dependent Raman scattering studies of improper and antidistortive phase transitions in (NH4)2Cd2(SO4)3. Journal of Raman Spectroscopy. 19(4). 225–230. 3 indexed citations
20.
Galzerani, J. C., Rajesh Srivastava, Ram S. Katiyar, & S. P. S. Porto. (1977). Temperature‐dependent Raman study of H‐bonds and possible phase‐transition in LiHCOO·H2O. Journal of Raman Spectroscopy. 6(4). 174–182. 14 indexed citations

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