Mei Wu

1.4k total citations
92 papers, 916 citations indexed

About

Mei Wu is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Mei Wu has authored 92 papers receiving a total of 916 indexed citations (citations by other indexed papers that have themselves been cited), including 73 papers in Condensed Matter Physics, 58 papers in Electrical and Electronic Engineering and 33 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Mei Wu's work include GaN-based semiconductor devices and materials (73 papers), Ga2O3 and related materials (32 papers) and Radio Frequency Integrated Circuit Design (22 papers). Mei Wu is often cited by papers focused on GaN-based semiconductor devices and materials (73 papers), Ga2O3 and related materials (32 papers) and Radio Frequency Integrated Circuit Design (22 papers). Mei Wu collaborates with scholars based in China, United States and Poland. Mei Wu's co-authors include Xiaohua Ma, Ling Yang, Yue Hao, Meng Zhang, Bin Hou, Qing Zhu, Hao Lu, Minhan Mi, Jiejie Zhu and Yue Hao and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Mei Wu

80 papers receiving 861 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Mei Wu China 19 647 556 238 179 158 92 916
Dong‐Seok Kim South Korea 16 688 1.1× 639 1.1× 392 1.6× 287 1.6× 146 0.9× 87 1.0k
O.D. Podoltsev Ukraine 14 124 0.2× 360 0.6× 209 0.9× 190 1.1× 107 0.7× 47 594
Derrick Langley United States 7 355 0.5× 304 0.5× 284 1.2× 102 0.6× 114 0.7× 29 602
Ronghui Lin Saudi Arabia 14 227 0.4× 157 0.3× 343 1.4× 222 1.2× 135 0.9× 27 587
Mitsuho Furuse Japan 15 470 0.7× 422 0.8× 101 0.4× 59 0.3× 45 0.3× 82 761
Hao Jiang China 20 870 1.3× 369 0.7× 725 3.0× 499 2.8× 237 1.5× 81 1.2k
D. Wippich Germany 13 727 1.1× 285 0.5× 191 0.8× 75 0.4× 69 0.4× 30 899
Yeon Suk Choi South Korea 15 256 0.4× 251 0.5× 79 0.3× 150 0.8× 97 0.6× 97 654
Ippei Suzuki Japan 16 165 0.3× 135 0.2× 311 1.3× 166 0.9× 389 2.5× 45 602

Countries citing papers authored by Mei Wu

Since Specialization
Citations

This map shows the geographic impact of Mei Wu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mei Wu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mei Wu more than expected).

Fields of papers citing papers by Mei Wu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mei Wu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mei Wu. The network helps show where Mei Wu may publish in the future.

Co-authorship network of co-authors of Mei Wu

This figure shows the co-authorship network connecting the top 25 collaborators of Mei Wu. A scholar is included among the top collaborators of Mei Wu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mei Wu. Mei Wu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hou, Bin, Ling Yang, Meng Zhang, et al.. (2025). Oxygen plasma and post-annealing assisted surface oxidation for high-Vth E-mode p-GaN HEMTs. Applied Physics Letters. 126(21). 1 indexed citations
2.
3.
Hou, Bin, Ling Yang, Yongsheng Zhu, et al.. (2025). 3 kV fully vertical β-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN. Applied Physics Letters. 126(6). 5 indexed citations
4.
Lu, Hao, et al.. (2025). Recent Advances in AlN-Based Acoustic Wave Resonators. Micromachines. 16(2). 205–205. 2 indexed citations
5.
Wu, Jie, Dong Xie, Xing Hu, et al.. (2025). Super-resolution reconstruction of thermal property distributions in transient thermoreflectance. Journal of Applied Physics. 138(12).
6.
Lu, Hao, Bin Hou, Ling Yang, et al.. (2024). High Performance CMOS-Compatible RF GaN-on-Silicon HEMTs With Low-Resistive and Highly-Conformal Ohmic Contacts. IEEE Transactions on Electron Devices. 71(9). 5218–5224. 2 indexed citations
7.
Wu, Mei, Bowen Yang, Ling Yang, et al.. (2024). Enhancing thermal dissipation ability and electrical performance in GaN-on-GaN HEMTs through stepped-carbon buffer design. Applied Physics Letters. 125(21). 2 indexed citations
8.
Wu, Mei, et al.. (2024). Deep learning-based data processing method for transient thermoreflectance measurements. Journal of Applied Physics. 135(9). 10 indexed citations
9.
Wu, Mei, et al.. (2024). Enhanced Performance of GaN HEMTs in X‐band Applications Using SixN/Si3N4 Bilayer Passivation Technique. physica status solidi (a). 221(21). 2 indexed citations
10.
Wu, Mei, Ling Yang, Bowen Yang, et al.. (2024). 15.1 W/mm Power Density GaN-on-GaN HEMT With High-Gradient Stepped-C Doped Buffer. IEEE Electron Device Letters. 46(3). 365–368. 1 indexed citations
11.
Yang, Ling, Hao Lu, Meng Zhang, et al.. (2024). Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer. Micromachines. 15(10). 1220–1220. 3 indexed citations
12.
Wu, Mei, et al.. (2024). Advancements in BaTiO3-Based Ultrasound‐Triggered Piezoelectric Catalysis for Tumor Therapy. SHILAP Revista de lepidopterología. 8(4). 231–231. 1 indexed citations
13.
14.
Lu, Hao, Ling Yang, Meng Zhang, et al.. (2023). Comprehensive Comparison of MOCVD- and LPCVD-SiNx Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications. Micromachines. 14(11). 2104–2104. 2 indexed citations
15.
Yang, Ling, Hao Lu, Meng Zhang, et al.. (2022). Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact. Journal of Applied Physics. 132(16). 3 indexed citations
16.
Zhu, Jiejie, Qing Zhu, Pengfei Wang, et al.. (2022). 8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer. Applied Physics Letters. 120(5). 13 indexed citations
17.
Mi, Minhan, Jiejie Zhu, Pengfei Wang, et al.. (2021). Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation. IEEE Transactions on Electron Devices. 69(2). 631–636. 15 indexed citations
18.
Zheng, Xuefeng, Yanrong Cao, Chong Wang, et al.. (2020). Study on the effect of diamond layer on the performance of double-channel AlGaN/GaN HEMTs. Semiconductor Science and Technology. 35(5). 55006–55006. 11 indexed citations
19.
Wu, Mei, Meng Zhang, Qing Zhu, et al.. (2019). Characterization of self-heating in GaN high electron mobility transistors using channel resistance measurement. Japanese Journal of Applied Physics. 58(SC). SCCB11–SCCB11. 3 indexed citations
20.
Zhang, Meng, Minhan Mi, Bin Hou, et al.. (2019). The coupling effect of chlorine-based gate recess and fin width modulation on the threshold voltage of AlGaN/GaN fin-based high electron mobility transistors. Japanese Journal of Applied Physics. 58(SC). SCCB25–SCCB25. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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