Meng Zhang

2.8k citations

175 papers · 1.9k indexed · h-index 24

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 118
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 59
Electrical and Electronic Engineering top 5%
- Radio Frequency Integrated Circuit Design 52
- Semiconductor materials and devices 33
- Silicon Carbide Semiconductor Technologies 26
- Particle Accelerators and Free-Electron Lasers 14
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 32
Materials Chemistry top 10%
- ZnO doping and properties 23

Co-authors: Xiaohua Ma Ling Yang Yue Hao Bin Hou Minhan Mi P. Bhattacharya Qing Zhu Mei Wu
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Physical Review Letters (1 paper)Advanced Materials (1 paper)Nano Letters (1 paper)
Partner nations: China United States Hong Kong

In The Last Decade

Meng Zhang

161 papers receiving 1.8k citations

Peers

Countries citing papers authored by Meng Zhang

Since Specialization

Citations

This map shows the geographic impact of Meng Zhang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Meng Zhang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Meng Zhang more than expected).

Fields of papers citing papers by Meng Zhang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Meng Zhang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Meng Zhang. The network helps show where Meng Zhang may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Meng Zhang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Meng Zhang Line = papers co-authored together Meng Zhang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Network pharmacology prediction and molecular docking-based strategy to explore the potential mechanism of Ginseng-Schisandra Chinensis decoction against asthma Fitoterapia ·Ting Zhou,Qingqing Li,Kaiyue Zhang,Meng Zhang,Hui Li,Wei Wu	2025	1
2	Oxygen plasma and post-annealing assisted surface oxidation for high-Vth E-mode p-GaN HEMTs Applied Physics Letters ·Mao Jia,Bin Hou,Ling Yang,Zhiqiang Xue,Meng Zhang,Mei Wu,Hao Lu,Xitong Hong,Jiale Du,Qian Xiao,Lixin Guo,Xuefeng Zheng,Xiaohua Ma,Yue Hao	2025	1
3	3 kV fully vertical β-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN Applied Physics Letters ·Qingyuan Chang,Bin Hou,Ling Yang,Mao Jia,Yongsheng Zhu,Mei Wu,Meng Zhang,Qing Zhu,Hao Lu,Jiarui Xu,Chunzhou Shi,Jiale Du,Qian Yu,Mengdi Li,Xu Zou,Haolun Sun,Xiaohua Ma,Yue Hao	2025	5
4	Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HEMT Fabricated by Integrating Transistors With Multiple Threshold Voltages IEEE Transactions on Electron Devices ·Pengfei Wang,Minhan Mi,Sirui An,Xiang Du,Yuwei Zhou,Can Gong,Yilin Chen,Qing Zhu,Meng Zhang,Jiuding Zhou,Jingshu Guo,Ziyue Zhao,Xiaohua Ma,Yue Hao	2024	5
5	5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer IEEE Electron Device Letters ·Pengfei Wang,Minhan Mi,Sirui An,Yuwei Zhou,Zhihong Chen,Qing Zhu,Xiang Du,Yilin Chen,Meng Zhang,Bin Hou,Ruqing Liu,Xiaohua Ma,Yue Hao	2024	1
6	High Performance CMOS-Compatible RF GaN-on-Silicon HEMTs With Low-Resistive and Highly-Conformal Ohmic Contacts IEEE Transactions on Electron Devices ·Hao Lu,Bin Hou,Ling Yang,Longge Deng,Likun Zhou,Zeyan Si,Meng Zhang,Mei Wu,Qing Zhu,Xiaohua Ma,Yue Hao	2024	2
7	Effects of spacer layer thickness in InAlN/GaN double-channel HEMTs Semiconductor Science and Technology ·Siyin Guo,Qing Zhu,Yilin Chen,Meng Zhang,Minhan Mi,Jiejie Zhu,Yi-Min Lei,Sirui An,Jia-Ni Lu,Can Gong,Xiaohua Ma	2024	1
8	Enhancing thermal dissipation ability and electrical performance in GaN-on-GaN HEMTs through stepped-carbon buffer design Applied Physics Letters ·Shiming Li,Biwei Meng,Mei Wu,Haolun Sun,Bowen Yang,Ling Yang,Xu Zou,Meng Zhang,Hao Lu,Bin Hou,Chao Yuan,Xiaohua Ma,Yue Hao	2024	2
9	Enhanced Performance of GaN HEMTs in X‐band Applications Using Si_xN/Si₃N₄ Bilayer Passivation Technique physica status solidi (a) ·Shiming Li,Mei Wu,Ling Yang,Bin Hou,Meng Zhang,Qingyuan Chang,Xiaohua Ma,Yue Hao	2024	2
10	High-Efficiency Millimeter-Wave Enhancement-Mode Ultrathin-Barrier AlGaN/GaN Fin-HEMT for Low-Voltage Terminal Applications IEEE Transactions on Electron Devices ·Yuwei Zhou,Minhan Mi,Can Gong,Pengfei Wang,Xinyi Wen,Yilin Chen,Jielong Liu,Mei Yang,Meng Zhang,Qing Zhu,Xiaohua Ma,Yue Hao	2023	10
11	Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact Journal of Applied Physics ·Ling Yang,Hao Lu,Xuerui Niu,Meng Zhang,Chunzhou Shi,Longge Deng,Bin Hou,Minhan Mi,Mei Wu,Kai Cheng,Qing Zhu,Yang Lu,Ling Lv,Xiaohua Ma,Yue Hao	2022	3
12	High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure Applied Physics Letters ·Yuwei Zhou,Minhan Mi,Mei Yang,Yutong Han,Pengfei Wang,Yilin Chen,Jielong Liu,Can Gong,Yiwei Lu,Meng Zhang,Qing Zhu,Xiaohua Ma,Yue Hao	2022	26
13	High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications IEEE Transactions on Electron Devices ·Yuwei Zhou,Minhan Mi,Yutong Han,Pengfei Wang,Yilin Chen,Jielong Liu,Can Gong,Mei Yang,Meng Zhang,Qing Zhu,Xiaohua Ma,Yue Hao	2022	14
14	High-Performance AlGaN/GaN HEMTs With Hybrid Schottky–Ohmic Drain for Ka-Band Applications IEEE Transactions on Electron Devices ·Jielong Liu,Minhan Mi,Jiejie Zhu,Pengfei Wang,Yuwei Zhou,Siyu Liu,Qing Zhu,Meng Zhang,Bin Hou,Hong Wang,Ling Yang,Xiaohua Ma,Yue Hao	2022	8
15	8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer Applied Physics Letters ·Jielong Liu,Jiejie Zhu,Minhan Mi,Qing Zhu,Siyu Liu,Pengfei Wang,Yuwei Zhou,Ziyue Zhao,Jiuding Zhou,Meng Zhang,Mei Wu,Bin Hou,Hong Wang,Ling Yang,Xiaohua Ma,Yue Hao	2022	13
16	Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates Applied Physics Letters ·Pengfei Wang,Minhan Mi,Meng Zhang,Qing Zhu,Jiejie Zhu,Yuwei Zhou,Jun-Wen Chen,Yilin Chen,Jielong Liu,Ling Yang,Bin Hou,Xiaohua Ma,Yue Hao	2022	12
17	Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications IEEE Journal of the Electron Devices Society ·Yuwei Zhou,Jiejie Zhu,Minhan Mi,Meng Zhang,Pengfei Wang,Yutong Han,Sheng Wu,Jielong Liu,Qing Zhu,Yilin Chen,Bin Hou,Xiaohua Ma,Yue Hao	2021	31
18	Characterization of self-heating in GaN high electron mobility transistors using channel resistance measurement Japanese Journal of Applied Physics ·Mei Wu,Meng Zhang,Qing Zhu,Ling Yang,Xiaohua Ma,Yue Hao	2019	3
19	The coupling effect of chlorine-based gate recess and fin width modulation on the threshold voltage of AlGaN/GaN fin-based high electron mobility transistors Japanese Journal of Applied Physics ·Meng Zhang,Minhan Mi,Bin Hou,Qing Zhu,Mei Wu,Lixiang Chen,Ling Yang,Xiaohua Ma	2019	1
20	Improving the transconductance flatness of InAlN/GaN HEMT by modulating V_T along the gate width Applied Physics Express ·Minhan Mi,Sheng Wu,Meng Zhang,Ling Yang,Bin Hou,Ziyue Zhao,Lixin Guo,Xuefeng Zheng,Xiaohua Ma,Yue Hao	2019	12

About Meng Zhang

Meng Zhang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 175 papers that have together received 1.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (118 papers), Ga2O3 and related materials (59 papers), Radio Frequency Integrated Circuit Design (52 papers), Semiconductor materials and devices (33 papers), Semiconductor Quantum Structures and Devices (32 papers), Silicon Carbide Semiconductor Technologies (26 papers), ZnO doping and properties (23 papers) and Particle Accelerators and Free-Electron Lasers (14 papers). The work is most often cited by research in Condensed Matter Physics (1.3k citations), Electronic, Optical and Magnetic Materials (608 citations) and Electrical and Electronic Engineering (1.3k citations). Meng Zhang has collaborated with scholars based in China, United States and Hong Kong. Frequent co-authors include Xiaohua Ma, Ling Yang, Yue Hao, Bin Hou, Minhan Mi, P. Bhattacharya, Qing Zhu, Mei Wu, Wei Guo and Jiejie Zhu. Their work appears in journals such as Physical Review Letters, Advanced Materials and Nano Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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