Meng Zhang

2.8k total citations
175 papers, 1.9k citations indexed

About

Meng Zhang is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Meng Zhang has authored 175 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 125 papers in Electrical and Electronic Engineering, 120 papers in Condensed Matter Physics and 60 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Meng Zhang's work include GaN-based semiconductor devices and materials (118 papers), Ga2O3 and related materials (59 papers) and Radio Frequency Integrated Circuit Design (52 papers). Meng Zhang is often cited by papers focused on GaN-based semiconductor devices and materials (118 papers), Ga2O3 and related materials (59 papers) and Radio Frequency Integrated Circuit Design (52 papers). Meng Zhang collaborates with scholars based in China, United States and Hong Kong. Meng Zhang's co-authors include Xiaohua Ma, Ling Yang, Yue Hao, Bin Hou, Minhan Mi, P. Bhattacharya, Mei Wu, Qing Zhu, Wei Guo and Junseok Heo and has published in prestigious journals such as Physical Review Letters, Advanced Materials and Nano Letters.

In The Last Decade

Meng Zhang

161 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Meng Zhang China 24 1.3k 1.3k 608 413 412 175 1.9k
Gerard Harbers Netherlands 11 1.1k 0.9× 981 0.8× 320 0.5× 837 2.0× 723 1.8× 13 2.0k
K. Yokoyama Japan 27 633 0.5× 1.4k 1.2× 402 0.7× 203 0.5× 1.0k 2.5× 235 2.4k
Nandita DasGupta India 23 740 0.6× 1.3k 1.1× 360 0.6× 382 0.9× 352 0.9× 124 2.0k
Satoru Kishida Japan 16 549 0.4× 565 0.4× 320 0.5× 430 1.0× 384 0.9× 203 1.3k
Changzheng Sun China 29 835 0.6× 1.7k 1.3× 409 0.7× 592 1.4× 1.1k 2.7× 259 2.6k
R. Muralidharan India 23 653 0.5× 800 0.6× 956 1.6× 887 2.1× 261 0.6× 113 1.8k
Shawn S. H. Hsu Taiwan 24 617 0.5× 2.1k 1.6× 291 0.5× 190 0.5× 338 0.8× 184 2.3k
Meng‐Chyi Wu Taiwan 23 574 0.4× 1.8k 1.5× 242 0.4× 679 1.6× 875 2.1× 240 2.3k
Geok Ing Ng Singapore 32 2.2k 1.7× 3.1k 2.5× 1.0k 1.7× 640 1.5× 1.3k 3.1× 269 3.8k
B. Ocker Germany 25 537 0.4× 1.1k 0.9× 749 1.2× 757 1.8× 1.6k 3.9× 63 2.3k

Countries citing papers authored by Meng Zhang

Since Specialization
Citations

This map shows the geographic impact of Meng Zhang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Meng Zhang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Meng Zhang more than expected).

Fields of papers citing papers by Meng Zhang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Meng Zhang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Meng Zhang. The network helps show where Meng Zhang may publish in the future.

Co-authorship network of co-authors of Meng Zhang

This figure shows the co-authorship network connecting the top 25 collaborators of Meng Zhang. A scholar is included among the top collaborators of Meng Zhang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Meng Zhang. Meng Zhang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hou, Bin, Ling Yang, Yongsheng Zhu, et al.. (2025). 3 kV fully vertical β-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN. Applied Physics Letters. 126(6). 5 indexed citations
2.
Zhou, Ting, Qingqing Li, Kaiyue Zhang, et al.. (2025). Network pharmacology prediction and molecular docking-based strategy to explore the potential mechanism of Ginseng-Schisandra Chinensis decoction against asthma. Fitoterapia. 181. 106388–106388. 1 indexed citations
3.
Chen, Zhiying, Yan Yan, Guanglong Ding, et al.. (2025). Annealing Strategy Toward Achieving High-Performance Indium Tungsten Oxide Thin-Film Transistors by Equilibrating Oxygen Vacancy and Chemisorbed Oxygen. IEEE Transactions on Electron Devices. 72(3). 1167–1173. 4 indexed citations
4.
Wang, Pengfei, Minhan Mi, Zhihong Chen, et al.. (2024). 5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer. IEEE Electron Device Letters. 45(10). 1717–1720. 1 indexed citations
5.
Wu, Mei, Bowen Yang, Ling Yang, et al.. (2024). Enhancing thermal dissipation ability and electrical performance in GaN-on-GaN HEMTs through stepped-carbon buffer design. Applied Physics Letters. 125(21). 2 indexed citations
6.
Yang, Ling, Hao Lu, Meng Zhang, et al.. (2024). Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer. Micromachines. 15(10). 1220–1220. 3 indexed citations
7.
Lu, Hao, Bin Hou, Ling Yang, et al.. (2024). High Performance CMOS-Compatible RF GaN-on-Silicon HEMTs With Low-Resistive and Highly-Conformal Ohmic Contacts. IEEE Transactions on Electron Devices. 71(9). 5218–5224. 2 indexed citations
8.
Chen, Yilin, Qing Zhu, Meng Zhang, et al.. (2024). On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls. Applied Physics Letters. 125(6). 1 indexed citations
9.
Wu, Mei, Ling Yang, Bowen Yang, et al.. (2024). 15.1 W/mm Power Density GaN-on-GaN HEMT With High-Gradient Stepped-C Doped Buffer. IEEE Electron Device Letters. 46(3). 365–368. 1 indexed citations
10.
Wang, Pengfei, Minhan Mi, Yilin Chen, et al.. (2024). Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HEMT Fabricated by Integrating Transistors With Multiple Threshold Voltages. IEEE Transactions on Electron Devices. 71(3). 1421–1427. 5 indexed citations
11.
Mi, Minhan, Pengfei Wang, Yilin Chen, et al.. (2023). High-Efficiency Millimeter-Wave Enhancement-Mode Ultrathin-Barrier AlGaN/GaN Fin-HEMT for Low-Voltage Terminal Applications. IEEE Transactions on Electron Devices. 71(3). 1383–1386. 10 indexed citations
12.
Wang, Qiang, et al.. (2023). A Physical Topology Identification Method for Low-voltage Distribution Areas Meter Box. Journal of Physics Conference Series. 2496(1). 12021–12021.
13.
Mi, Minhan, Pengfei Wang, Yilin Chen, et al.. (2023). InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications. IEEE Journal of the Electron Devices Society. 11. 72–77. 5 indexed citations
14.
Mi, Minhan, Jiejie Zhu, Pengfei Wang, et al.. (2022). High-Performance AlGaN/GaN HEMTs With Hybrid Schottky–Ohmic Drain for Ka-Band Applications. IEEE Transactions on Electron Devices. 69(8). 4188–4193. 8 indexed citations
15.
Yang, Mei, Yutong Han, Pengfei Wang, et al.. (2022). High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure. Applied Physics Letters. 120(6). 26 indexed citations
16.
Mi, Minhan, Yutong Han, Pengfei Wang, et al.. (2022). High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications. IEEE Transactions on Electron Devices. 70(1). 43–47. 14 indexed citations
17.
Wang, Pengfei, Meng Zhang, Qing Zhu, et al.. (2022). Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates. Applied Physics Letters. 120(10). 12 indexed citations
18.
Zhang, Meng, Minhan Mi, Bin Hou, et al.. (2019). The coupling effect of chlorine-based gate recess and fin width modulation on the threshold voltage of AlGaN/GaN fin-based high electron mobility transistors. Japanese Journal of Applied Physics. 58(SC). SCCB25–SCCB25. 1 indexed citations
19.
Wu, Mei, Meng Zhang, Qing Zhu, et al.. (2019). Characterization of self-heating in GaN high electron mobility transistors using channel resistance measurement. Japanese Journal of Applied Physics. 58(SC). SCCB11–SCCB11. 3 indexed citations
20.
Mi, Minhan, Yang Lu, Yue Hao, et al.. (2018). Improved fmax and breakdown voltage in AlGaN/GaN HEMT with plasma treatment. 208–211. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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