Yang Lu

726 citations

65 papers · 530 indexed · h-index 14

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 45
- GaN-based semiconductor devices and materials 45
Electrical and Electronic Engineering 57
- Radio Frequency Integrated Circuit Design 35
- Advanced Power Amplifier Design 17
- Semiconductor materials and devices 11
- Silicon Carbide Semiconductor Technologies 9
- Microwave Engineering and Waveguides 6

Co-authors: Xiaohua Ma (47 shared papers)Yue Hao (27 shared papers)Meng Zhang (21 shared papers)Minhan Mi (19 shared papers)Ling Yang (21 shared papers)Bin Hou (20 shared papers)Qing Zhu (17 shared papers)Mei Wu (10 shared papers)
Journals: IEEE Transactions on Electron Devices (10 papers)IEEE Electron Device Letters (4 papers)Solid-State Electronics (3 papers)International Journal of RF and Microwave Computer-Aided Engineering (2 papers)IEEE Microwave and Wireless Components Letters (2 papers)
Partner nations: China United States Taiwan

In The Last Decade

Yang Lu

52 papers receiving 488 citations

Peers

Countries citing papers authored by Yang Lu

Since Specialization

Citations

This map shows the geographic impact of Yang Lu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yang Lu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yang Lu more than expected).

Fields of papers citing papers by Yang Lu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yang Lu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yang Lu. The network helps show where Yang Lu may publish in the future.

Co-authors

The 25 scholars most cited alongside Yang Lu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Yang Lu Line = papers co-authored together Yang Lu links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 65 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology IEEE Electron Device Letters ·Yang Lu, Xiaohua Ma, Ling Yang, Bin Hou, Minhan Mi, Meng Zhang, Jiaxin Zheng, Hengshuang Zhang, Yue Hao	2018	47
2	Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region IEEE Transactions on Electron Devices ·Minhan Mi, Xiaohua Ma, Ling Yang, Yang Lu, Bin Hou, Jiejie Zhu, Meng Zhang, Hengshuang Zhang, Qing Zhu, Lin‐An Yang, Yue Hao	2017	35
3	A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High- Linearity Applications IEEE Electron Device Letters ·Sheng Wu, Yue Hao, Xiaohua Ma, Ling Yang, Minhan Mi, Meng Zhang, Mei Wu, Yang Lu, Hengshuang Zhang, Chupeng Yi	2019	34
4	Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs IEEE Transactions on Electron Devices ·Meng Zhang, Xiaohua Ma, Ling Yang, Minhan Mi, Bin Hou, Yunlong He, Sheng Wu, Yang Lu, Hengshuang Zhang, Qing Zhu, Jun Yin, Jiafeng Wu, Lin‐An Yang, Yue Hao	2018	32
5	Enhanced g_mand f_TWith High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge IEEE Electron Device Letters ·Ling Yang, Minhan Mi, Bin Hou, Hengshuang Zhang, Jiejie Zhu, Qing Zhu, Yang Lu, Meng Zhang, Yunlong He, Lixiang Chen, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao	2017	28
6	The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer IEEE Transactions on Electron Devices ·Ling Yang, Bin Hou, Fuchun Jia, Meng Zhang, Mei Wu, Xuerui Niu, Hao Lu, Chunzhou Shi, Minhan Mi, Qing Zhu, Yang Lu, Xiaohua Ma, Yue Hao	2022	27
7	Optical analysis of thin film combinatorial libraries Applied Surface Science ·John D. Perkins, Charles W. Teplin, Maikel F. A. M. van Hest, J. Alleman, X. Li, Matthew S. Dabney, B. M. Keyes, L. M. Gedvilas, David S. Ginley, Yufeng Lin, Yang Lu	2003	26
8	High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si <inline-formula> <tex-math notation="LaTeX">$\delta$ </tex-math> </inline-formula>-Doped AlGaN/GaN:C HEMTs IEEE Transactions on Electron Devices ·Ling Yang, Meng Zhang, Bin Hou, Minhan Mi, Mei Wu, Qing Zhu, Jiejie Zhu, Yang Lu, Lixiang Chen, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao	2019	24
9	High linearity and high power performance with barrier layer of sandwich structure and Al_0.05GaN back barrier for X-band application Journal of Physics D Applied Physics ·Bin Hou, Ling Yang, Minhan Mi, Meng Zhang, Chupeng Yi, Mei Wu, Qing Zhu, Yang Lu, Jiejie Zhu, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao	2020	23
10	Reactive ion etching of GaN with BCl3/SF6 plasmas Materials Chemistry and Physics ·Ming Feng, J. D. Guo, Yang Lu, Edward Yi Chang	1996	21
11	High-Performance Enhancement-mode AlGaN/GaN high electron mobility transistors combined with TiN-based Source Contact Ledge and Two-Step Fluorine Treatment IEEE Electron Device Letters ·Ling Yang, Bin Hou, Minhan Mi, Qing Zhu, Mei Wu, Jiejie Zhu, Yang Lu, Meng Zhang, Lixiang Chen, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao	2018	21
12	Quantum communication scheme based on quantum teleportation Acta Physica Sinica ·Yang Lu, Hongyang Ma, Chao Zheng, Ding Xiao-Lan, Gao Jian-Cun, Gui‐Lu Long	2017	16
13	Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure IEEE Transactions on Electron Devices ·Ling Yang, Minhan Mi, Bin Hou, Jiejie Zhu, Meng Zhang, Yunlong He, Yang Lu, Qing Zhu, Xiaowei Zhou, Ling Lv, Yanrong Cao, Xiaohua Ma, Yue Hao	2017	16
14	A fast small signal modeling method for GaN HEMTs Solid-State Electronics ·Ziyue Zhao, Yang Lu, Chupeng Yi, Yilin Chen, Xiaolong Cai, Yu Zhang, Xiangyang Duan, Xiaohua Ma, Yue Hao	2020	14
15	Investigation on the Influence of Ohmic Structure on Channel-to-Channel Coupling Effect in InAlN/GaN Double Channel HEMTs IEEE Journal of the Electron Devices Society ·Ling Yang, Hao Lu, Meng Zhang, Xuerui Niu, Chuzhou Shi, Bin Hou, Minhan Mi, Mei Wu, Qing Zhu, Yang Lu, Ling Lv, Kai Cheng, Xiaohua Ma, Yue Hao	2022	13
16	Influence of Different Fin Configurations on Small-Signal Performance and Linearity for AlGaN/GaN Fin-HEMTs IEEE Transactions on Electron Devices ·Hengshuang Zhang, Xiaohua Ma, Meng Zhang, Yang Lu, Qing Zhu, Ziyue Zhao, Chupeng Yi, Lin‐An Yang, Peijun Ma, Yue Hao	2019	11
17	A 10-W High-Power Amplifier Using Input Nonlinearity for K-Band Satcom Applications IEEE Microwave and Wireless Components Letters ·Chupeng Yi, Yang Lu, Ziyue Zhao, Yuchen Wang, Jiuding Zhou, Bochao Zhao, Peixian Li, Xiaohua Ma, Yue Hao	2022	11
18	Extraction method for parasitic capacitances and inductances of HEMT models Solid-State Electronics ·Hengshuang Zhang, Peijun Ma, Yang Lu, Bochao Zhao, Jiaxin Zheng, Xiaohua Ma, Yue Hao	2016	10
19	A Scalable Active Compensatory Sub-Circuit for Accurate GaN HEMT Large Signal Models IEEE Microwave and Wireless Components Letters ·Jiaxin Zheng, Xinhua Ma, Yang Lu, Bochao Zhao, Huanjie Zhang, Menghao Zhang, Yue Hao	2016	10
20	An improved EEHEMT model for kink effect on AlGaN/GaN HEMT Chinese Physics B ·Mengyi Cao, Yang Lu, Jiaxing Wei, Yonghe Chen, Weijun Li, Jiaxin Zheng, Xiaohua Ma, Yue Hao	2014	10

About Yang Lu

Yang Lu is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 65 papers that have together received 530 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (45 papers), Radio Frequency Integrated Circuit Design (35 papers), Advanced Power Amplifier Design (17 papers), Ga2O3 and related materials (11 papers), Semiconductor materials and devices (11 papers), Semiconductor Quantum Structures and Devices (9 papers), Silicon Carbide Semiconductor Technologies (9 papers) and Microwave Engineering and Waveguides (6 papers). The work is most often cited by research in Condensed Matter Physics (415 citations), Electronic, Optical and Magnetic Materials (169 citations), Electrical and Electronic Engineering (398 citations), Atomic and Molecular Physics, and Optics (121 citations) and Materials Chemistry (86 citations). Yang Lu has collaborated with scholars based in China, United States and Taiwan. Frequent co-authors include Xiaohua Ma, Yue Hao, Meng Zhang, Minhan Mi, Ling Yang, Bin Hou, Qing Zhu, Mei Wu, Jiejie Zhu and Yue Hao. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Solid-State Electronics, International Journal of RF and Microwave Computer-Aided Engineering and IEEE Microwave and Wireless Components Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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