Hengyu Wang

974 total citations
84 papers, 645 citations indexed

About

Hengyu Wang is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Hengyu Wang has authored 84 papers receiving a total of 645 indexed citations (citations by other indexed papers that have themselves been cited), including 59 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 11 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Hengyu Wang's work include Silicon Carbide Semiconductor Technologies (51 papers), Semiconductor materials and devices (22 papers) and Electromagnetic Compatibility and Noise Suppression (18 papers). Hengyu Wang is often cited by papers focused on Silicon Carbide Semiconductor Technologies (51 papers), Semiconductor materials and devices (22 papers) and Electromagnetic Compatibility and Noise Suppression (18 papers). Hengyu Wang collaborates with scholars based in China, United States and United Kingdom. Hengyu Wang's co-authors include Kuang Sheng, Ce Wang, Na Ren, Baozhu Wang, Yuhao Zhang, Min Zou, Qing Guo, Xinghua Li, Ming Su and Ming Xiao and has published in prestigious journals such as Applied Physics Letters, Acta Materialia and IEEE Transactions on Industrial Electronics.

In The Last Decade

Hengyu Wang

74 papers receiving 622 citations

Peers

Hengyu Wang

EEE

EOMM

AMPO

CMP

Riko I Made Singapore

Yan Peng China

Bin Cao China

Oleg Medvedev Russia

Samuel Cruz United States

Jimin Oh South Korea

Shuai Yuan China

Yuan-Ting Lin Taiwan

Joseph Vimal Vas Singapore

James Spencer Lundh United States

Riko I Made Singapore

Hengyu Wang

399 ×0.9

EEE

127 ×0.7

100 ×0.7

EOMM

74 ×0.8

AMPO

80 ×1.0

CMP

Citations per year, relative to Hengyu Wang Hengyu Wang (= 1×) peers Riko I Made

Countries citing papers authored by Hengyu Wang

Since Specialization

Citations

This map shows the geographic impact of Hengyu Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hengyu Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hengyu Wang more than expected).

Fields of papers citing papers by Hengyu Wang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hengyu Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hengyu Wang. The network helps show where Hengyu Wang may publish in the future.

Co-authorship network of co-authors of Hengyu Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Hengyu Wang. A scholar is included among the top collaborators of Hengyu Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hengyu Wang. Hengyu Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Wang, Ce, Hengyu Wang, & Kuang Sheng. (2024). Floating Island Structure With Metal Bridge to Resolve the Turn-On Recovery Problem. IEEE Transactions on Electron Devices. 71(10). 6448–6451.

Wang, Hengyu, Ce Wang, C.Q. Zhang, et al.. (2024). 2kV Low Leakage Vertical NiO/β-Ga₂O₃ Hetero-Junction Diode and its Thermal/Electrical Stability. 200–203. 4 indexed citations

Ren, Na, et al.. (2024). Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes With Enhanced Current Capability and Electroluminescence Phenomenon. IEEE Electron Device Letters. 45(9). 1566–1569. 2 indexed citations

Li, Junze, Qing Guo, Ce Wang, et al.. (2024). Modeling of the Influence on Effective VTH From Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs. IEEE Transactions on Electron Devices. 71(10). 6221–6227.

Wang, Bixuan, Ruizhe Zhang, Qihao Song, et al.. (2024). Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method. IEEE Transactions on Power Electronics. 39(5). 5576–5589. 10 indexed citations

Ren, Na, Hengyu Wang, Qing Guo, et al.. (2024). Post-trench restoration for vertical GaN power devices. Applied Physics Letters. 124(9). 1 indexed citations

Wang, Hengyu, C.Q. Zhang, Ce Wang, et al.. (2024). 3.3 kV-class NiO/β-Ga2O3 heterojunction diode and its off-state leakage mechanism. Applied Physics Letters. 124(24). 21 indexed citations

Wang, Hengyu, et al.. (2024). 4.15 kV/4.6 mΩ⋅cm² 4H-SiC Epi-Refilled Super-Junction Schottky Diode With Ring Assisted Super-Junction Termination Extension. IEEE Electron Device Letters. 45(12). 2311–2314. 2 indexed citations

Li, Xinghua, et al.. (2023). Strategies for improving the sensing performance of In2O3-based gas sensors for ethanol detection. Journal of Alloys and Compounds. 963. 171190–171190. 55 indexed citations

10.

Liu, Haitao, Yongxiang Wang, Hengyu Wang, et al.. (2023). Surface modification of rare earth Sm-doped WO3 films through polydopamine for enhanced electrochromic energy storage performance. Journal of Colloid and Interface Science. 649. 510–518. 16 indexed citations

11.

Hu, Borong, et al.. (2023). Optically Triggered Self-Adaptive Zero Voltage Switching. IEEE Transactions on Power Electronics. 38(9). 10600–10605. 6 indexed citations

12.

Wang, Hengyu, et al.. (2023). 3D TACD Modelling of Multi-channel Tri-gate Normally-off AlGaN/GaN MOSHEMTs. 149–152.

13.

Wang, Ce, et al.. (2023). 4H-SiC Floating Island JBS with Multi-Layer Floating Field Ring Termination. 76–79. 1 indexed citations

14.

Wang, Baozhu, Hongyi Xu, Na Ren, et al.. (2023). A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique. Micromachines. 14(12). 2212–2212. 1 indexed citations

15.

Wang, Hengyu, Baozhu Wang, Li Liu, et al.. (2022). 4H-SiC Trench Gate Lateral MOSFET With Dual Source Trenches for Improved Performance and Reliability. IEEE Transactions on Device and Materials Reliability. 23(1). 2–8. 2 indexed citations

16.

Wang, Bixuan, Ruizhe Zhang, Hengyu Wang, et al.. (2022). Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching. IEEE Electron Device Letters. 44(2). 217–220. 21 indexed citations

17.

Wang, Baozhu, Hengyu Wang, Ce Wang, et al.. (2021). Performance analysis of 4H-SiC super-junction devices: impact of trench angle and improvement with multi-epi structure. Semiconductor Science and Technology. 36(10). 105006–105006. 1 indexed citations

18.

Wang, Hengyu, Ming Xiao, Kuang Sheng, Tomás Palacios, & Yuhao Zhang. (2020). Switching Performance Analysis of Vertical GaN FinFETs: Impact of Interfin Designs. IEEE Journal of Emerging and Selected Topics in Power Electronics. 9(2). 2235–2246. 34 indexed citations

19.

Wang, Hengyu, et al.. (2020). A modified trifilar pendulum for simultaneously determining the moment of inertia and the mass of an irregular object. European Journal of Physics. 42(1). 15002–15002. 1 indexed citations

20.

Rui, Yunjun, Tianmu Zhang, Dewei Zhu, et al.. (2019). Improved Performance of Silicon Nanowire-Based Solar Cells with Diallyl Disulfide Passivation. The Journal of Physical Chemistry C. 123(8). 4664–4673. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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