Hai Lu

9.8k total citations · 3 hit papers
310 papers, 7.8k citations indexed

About

Hai Lu is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Hai Lu has authored 310 papers receiving a total of 7.8k indexed citations (citations by other indexed papers that have themselves been cited), including 202 papers in Condensed Matter Physics, 164 papers in Electrical and Electronic Engineering and 154 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Hai Lu's work include GaN-based semiconductor devices and materials (202 papers), Ga2O3 and related materials (146 papers) and ZnO doping and properties (72 papers). Hai Lu is often cited by papers focused on GaN-based semiconductor devices and materials (202 papers), Ga2O3 and related materials (146 papers) and ZnO doping and properties (72 papers). Hai Lu collaborates with scholars based in China, United States and United Kingdom. Hai Lu's co-authors include W. J. Schaff, Youdou Zheng, Dunjun Chen, Junqiao Wu, W. Walukiewicz, E. E. Häller, Fangfang Ren, K. M. Yu, Joel W. Ager and Rong Zhang and has published in prestigious journals such as Advanced Materials, Nature Communications and Nano Letters.

In The Last Decade

Hai Lu

290 papers receiving 7.5k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Unusual properties of the fundamental band gap of InN

2002 1.2k citations Hai Lu et al. profile →
Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

2021 349 citations Qing Cai, Haifan You et al. profile →
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics

2023 118 citations Feng Zhou, Hehe Gong et al. Nature Communications profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Hai Lu China	42	4.8k	4.2k	3.5k	3.0k	1.8k	310	7.8k
Tien‐Chang Lu Taiwan	44	4.1k 0.9×	2.2k 0.5×	4.3k 1.2×	4.4k 1.5×	3.4k 1.8×	546	9.4k
E. Fred Schubert United States	48	6.7k 1.4×	3.0k 0.7×	4.3k 1.2×	4.3k 1.4×	4.2k 2.3×	153	10.0k
J. Li United States	48	4.8k 1.0×	3.0k 0.7×	4.6k 1.3×	2.8k 0.9×	1.7k 0.9×	235	8.4k
Edward T. Yu United States	53	2.8k 0.6×	2.4k 0.6×	4.3k 1.2×	6.7k 2.2×	3.2k 1.7×	258	10.8k
Martin Kuball United Kingdom	56	6.8k 1.4×	2.5k 0.6×	5.2k 1.5×	6.1k 2.0×	1.9k 1.0×	409	10.6k
Lucia Romano United States	41	3.9k 0.8×	1.8k 0.4×	2.6k 0.7×	2.4k 0.8×	1.6k 0.9×	182	6.3k
Guus Rijnders Netherlands	53	3.9k 0.8×	8.1k 1.9×	9.9k 2.8×	3.5k 1.2×	1.2k 0.7×	283	12.5k
César Magén Spain	44	2.3k 0.5×	3.3k 0.8×	4.1k 1.2×	1.9k 0.6×	2.2k 1.2×	237	7.6k
Russell D. Dupuis United States	47	5.8k 1.2×	3.2k 0.8×	3.2k 0.9×	6.2k 2.1×	5.4k 2.9×	510	11.0k
D. C. Look United States	40	2.3k 0.5×	3.4k 0.8×	5.8k 1.7×	4.6k 1.5×	1.5k 0.8×	182	8.3k

Countries citing papers authored by Hai Lu

Since Specialization

Citations

This map shows the geographic impact of Hai Lu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hai Lu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hai Lu more than expected).

Fields of papers citing papers by Hai Lu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hai Lu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hai Lu. The network helps show where Hai Lu may publish in the future.

Co-authorship network of co-authors of Hai Lu

This figure shows the co-authorship network connecting the top 25 collaborators of Hai Lu. A scholar is included among the top collaborators of Hai Lu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hai Lu. Hai Lu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Hu, Yan, Hongli Shen, Mingzhen Yuan, et al.. (2025). COph100: A comprehensive fundus image registration dataset from infants constituting the “RIDIRP” database. Scientific Data. 12(1). 99–99.

Xu, Weizong, Dong Zhou, Danfeng Pan, et al.. (2025). 4H-SiC-Based Low-Noise Front-End Charge Coupling Transistor for 0.9% Radiation Energy Resolution. IEEE Transactions on Electron Devices. 72(7). 3915–3919. 1 indexed citations

Lu, Hai, et al.. (2024). Immediate and long-term brain activation of acupuncture on ischemic stroke patients: an ALE meta-analysis of fMRI studies. Frontiers in Neuroscience. 18. 1392002–1392002. 1 indexed citations

Gong, Hehe, Feng Zhou, Ming Xiao, et al.. (2024). Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga₂O₃ Heterojunction by Edge Termination Optimization. IEEE Electron Device Letters. 45(8). 1421–1424. 21 indexed citations

Zhou, Feng, Chaoming Liu, Yiheng Li, et al.. (2024). 800-V Irradiation-Hardened Device Technology on GaN-on-SiC Power Integration Platform. 1–4. 3 indexed citations

Wang, Yifu, Weizong Xu, Dong Zhou, et al.. (2024). 4H-SiC Tetra-Lateral Position Sensitive Detector for Ultraviolet Measurements. IEEE Transactions on Electron Devices. 71(8). 4829–4833. 3 indexed citations

You, Haifan, Yifu Wang, Yiwang Wang, et al.. (2024). High-Performance p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors With fW-Level Weak Light Detection Capacity. IEEE Electron Device Letters. 45(10). 1899–1902. 2 indexed citations

He, Mingzhu, Hai Lu, Hai Zhong, et al.. (2024). Low-temperature suitability of flexible photo-rechargeable devices integrated with hydrogel-based lithium-ion batteries and perovskite solar cells. Journal of Materials Chemistry A. 12(29). 18214–18223. 2 indexed citations

Zhou, Feng, Quanyou Chen, Xiaofeng Lyu, et al.. (2024). Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness. 526–529. 2 indexed citations

10.

Zhou, Feng, Hehe Gong, Ming Xiao, et al.. (2023). An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics. Nature Communications. 14(1). 4459–4459. 118 indexed citations breakdown →

11.

Yu, Chao, Hai Lu, Rong Zhang, et al.. (2023). Free-running 4H-SiC single-photon detector with ultralow afterpulse probability at 266 nm. Review of Scientific Instruments. 94(3). 33101–33101. 7 indexed citations

12.

Xu, Weizong, Renjie Xu, Dong Zhou, et al.. (2023). GaN-Based Low-Energy X-Ray Single Photon Detector With Photon Energy Resolution and Fast Response. IEEE Photonics Technology Letters. 36(2). 123–126. 2 indexed citations

13.

Cai, Qing, Pengfei Shao, Danfeng Pan, et al.. (2021). Low-Voltage p-i-n GaN-Based Alpha-Particle Detector With High Energy Resolution. IEEE Electron Device Letters. 42(12). 1755–1758. 9 indexed citations

14.

Lu, Hai, et al.. (2021). An Ultraviolet Photon Counting Imaging System Based on a SiC SPAD Array. IEEE Photonics Technology Letters. 33(21). 1213–1216. 1 indexed citations

15.

Wang, Tingting, Sining Dong, Zhili Xiao, et al.. (2021). Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures. Physical Review Materials. 5(6). 4 indexed citations

16.

Cheng, Liang, Weizong Xu, Danfeng Pan, et al.. (2019). Gate-first process compatible, high-quality in situ SiN _x for surface passivation and gate dielectrics in AlGaN/GaN MISHEMTs. Journal of Physics D Applied Physics. 52(30). 305105–305105. 11 indexed citations

17.

Ge, Mei, Matteo Meneghini, Gaudenzio Meneghesso, et al.. (2019). Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors. IEEE Electron Device Letters. 40(3). 379–382. 27 indexed citations

18.

Dong, Yan, Dong-Hyeok Son, J.‐H. Lee, et al.. (2017). AlGaN/GaN heterostructure pH sensor with multi-sensing segments. Sensors and Actuators B Chemical. 260. 134–139. 53 indexed citations

19.

Lu, Hai, et al.. (2016). a‐IGZO Schottky障壁ダイオードにおけるサブギャップ状態転移を含むバイアスストレス不安定性. Journal of Physics D Applied Physics. 49(39). 6. 3 indexed citations

20.

Liao, Zhihong, Yingli Chen, Fangping Li, et al.. (2008). Multicenter clinical study on the efficacy and safety of inhalable insulin aerosol in the treatment of type 2 diabetes. Chinese Medical Journal. 121(13). 1159–1164. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact