Moon Sig Joo

455 total citations
29 papers, 383 citations indexed

About

Moon Sig Joo is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Moon Sig Joo has authored 29 papers receiving a total of 383 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Moon Sig Joo's work include Semiconductor materials and devices (24 papers), Advanced Memory and Neural Computing (15 papers) and Ferroelectric and Negative Capacitance Devices (14 papers). Moon Sig Joo is often cited by papers focused on Semiconductor materials and devices (24 papers), Advanced Memory and Neural Computing (15 papers) and Ferroelectric and Negative Capacitance Devices (14 papers). Moon Sig Joo collaborates with scholars based in South Korea, Singapore and United States. Moon Sig Joo's co-authors include Byung Jin Cho, W. K. Chim, Chia Ching Yeo, Dim‐Lee Kwong, N. Balasubramanian, S. Mathew, Jae Sub Oh, Young-Min Park, Sung Kyu Lim and D.S.H. Chan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Moon Sig Joo

28 papers receiving 361 citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
Moon Sig Joo 375 126 34 28 11 29 383
Masato Koyama 312 0.8× 121 1.0× 57 1.7× 41 1.5× 22 2.0× 46 339
S. Minoret 158 0.4× 62 0.5× 25 0.7× 30 1.1× 41 3.7× 14 193
M. S. Joo 363 1.0× 168 1.3× 66 1.9× 51 1.8× 11 1.0× 13 400
G. Ribes 924 2.5× 121 1.0× 54 1.6× 55 2.0× 4 0.4× 49 940
V.F. Drobny 217 0.6× 207 1.6× 51 1.5× 17 0.6× 8 0.7× 19 361
Jiang Lu 349 0.9× 129 1.0× 33 1.0× 55 2.0× 15 1.4× 19 375
Elke Erben 347 0.9× 170 1.3× 31 0.9× 44 1.6× 9 0.8× 31 364
Hyo Kyeom Kim 566 1.5× 364 2.9× 27 0.8× 29 1.0× 10 0.9× 21 580
Kiyoung Jeon 361 1.0× 312 2.5× 42 1.2× 16 0.6× 12 1.1× 11 397
R. Khamankar 590 1.6× 117 0.9× 38 1.1× 87 3.1× 26 2.4× 34 629

Countries citing papers authored by Moon Sig Joo

Since Specialization
Citations

This map shows the geographic impact of Moon Sig Joo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Moon Sig Joo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Moon Sig Joo more than expected).

Fields of papers citing papers by Moon Sig Joo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Moon Sig Joo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Moon Sig Joo. The network helps show where Moon Sig Joo may publish in the future.

Co-authorship network of co-authors of Moon Sig Joo

This figure shows the co-authorship network connecting the top 25 collaborators of Moon Sig Joo. A scholar is included among the top collaborators of Moon Sig Joo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Moon Sig Joo. Moon Sig Joo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Joo, Moon Sig, et al.. (2011). Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory. Solid-State Electronics. 63(1). 115–118. 12 indexed citations
2.
3.
Sung, Min Gyu, et al.. (2011). The effect of crystallinity of HfO<inf>2</inf> on the resistive memory switching reliability. 6B.5.1–6B.5.5. 2 indexed citations
4.
Sung, Min Gyu, et al.. (2011). Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2. Journal of The Electrochemical Society. 158(4). H417–H417. 9 indexed citations
5.
Park, Jong Kyung, Young-Min Park, Seok-Hee Lee, et al.. (2011). Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3Blocking Layer in Flash Memory Device. Japanese Journal of Applied Physics. 50(4S). 04DD07–04DD07. 5 indexed citations
6.
7.
Park, Jong Kyung, Young-Min Park, Sung Kyu Lim, et al.. (2010). Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device. Applied Physics Letters. 96(22). 26 indexed citations
8.
Park, Young-Min, et al.. (2010). Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device. Applied Physics Express. 3(9). 91501–91501. 8 indexed citations
9.
10.
Sung, Min Gyu, Kwan-Yong Lim, Yong Soo Kim, et al.. (2007). Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices. Japanese Journal of Applied Physics. 46(4S). 2134–2134. 6 indexed citations
11.
Chim, W. K., et al.. (2006). Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation. IEEE Transactions on Electron Devices. 53(4). 654–662. 105 indexed citations
12.
13.
Joo, Moon Sig, Byung Jin Cho, N. Balasubramanian, & Dim‐Lee Kwong. (2005). Stoichiometry dependence of Fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric. IEEE Electron Device Letters. 26(12). 882–884. 3 indexed citations
14.
Joo, Moon Sig, Byung Jin Cho, D. Z., N. Balasubramanian, & D. L. Kwong. (2004). Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process. 1 indexed citations
15.
Loh, Wei Yip, Byung Jin Cho, Moon Sig Joo, et al.. (2004). Analysis of charge trapping and breakdown mechanism in high-k dielectrics with metal gate electrode using carrier separation. 38.3.1–38.3.4. 15 indexed citations
16.
Yeo, Chia Ching, et al.. (2004). Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2. Thin Solid Films. 462-463. 90–95. 21 indexed citations
17.
Yeo, Chia Ching, Byung Jin Cho, Moon Sig Joo, et al.. (2003). Improvement of Electrical Properties of MOCVD HfO[sub 2] by Multistep Deposition. Electrochemical and Solid-State Letters. 6(11). F42–F42. 6 indexed citations
18.
Joo, Moon Sig, Byung Jin Cho, Chia Ching Yeo, et al.. (2003). Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process. IEEE Transactions on Electron Devices. 50(10). 2088–2094. 51 indexed citations
19.
Cho, Byung Jin, et al.. (2001). Reliability of Thin Gate Oxides Irradiated under X-Ray Lithography Conditions. Japanese Journal of Applied Physics. 40(4S). 2819–2819. 2 indexed citations
20.
Cho, Byung Jin, et al.. (2000). Investigation of Reliability Degradation of Ultra-Thin Gate Oxides Irradiated under Electron-Beam Lithography Conditions. Japanese Journal of Applied Physics. 39(4S). 2181–2181. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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