C. McAleese

1.7k citations

65 papers · 1.3k indexed · h-index 20

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 45
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 20
Mechanics of Materials top 5%
- Metal and Thin Film Mechanics 20
Materials Chemistry top 10%
- ZnO doping and properties 13
- Graphene research and applications 9
- 2D Materials and Applications 8
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 11
Electrical and Electronic Engineering
- Semiconductor materials and devices 22

Co-authors: C. J. Humphreys Menno J. Kappers J. L. Hollander M. J. Kappers D.V. Sridhara Rao P. Dawson Rachel A. Oliver M. E. Vickers
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Mechanics of Materials
Journals: Journal of Applied Physics (10 papers)Applied Physics Letters (6 papers)Journal of Crystal Growth (5 papers)
Partner nations: United Kingdom United States Germany

In The Last Decade

C. McAleese

64 papers receiving 1.2k citations

Peers

Countries citing papers authored by C. McAleese

Since Specialization

Citations

This map shows the geographic impact of C. McAleese's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. McAleese with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. McAleese more than expected).

Fields of papers citing papers by C. McAleese

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. McAleese. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. McAleese. The network helps show where C. McAleese may publish in the future.

Co-authorship network

The 25 scholars most cited alongside C. McAleese, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. McAleese Line = papers co-authored together C. McAleese links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High-temperature-resilient hyperbolicity in a mixed-dimensional superlattice Matter ·G. Zacharis,V. Defontaine,Jingwei Yang,Ben R. Conran,Leila Sadat Rezai,Yolanda Borboa,Zahra Fakhraai,C. McAleese,Yu‐Jung Lu,Deep Jariwala	2025	1
2	Polariton-Mediated Ultrafast Nonlinear Energy Transfer in a van der Waals Superlattice ACS Nano ·V. Defontaine,G. Zacharis,Jingwei Yang,Brian S Collier,V. de Vries,Ben R. Conran,C. McAleese,Deep Jariwala,Yu‐Jung Lu	2025	2
3	Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga₂O₃ physica status solidi (b) ·Vinod Bala Sharma,G Silva Galindo,P. R. Edwards,Yuichi Oshima,C. McAleese,Piero Mazzolini,Matteo Bosi,L. Seravalli,R. Fornari,Robert Martin,Fabien Massabuau	2025	7
4	Technological limitations of solid-source chemical vapor deposition of van der Waals heterostructures Scientific Reports ·张何清,W. Sitek,Ben R. Conran,Xiaochen Wang,C. McAleese,A. A. Drozdovsky,S. Kret,Iwona Pasternak,Mariusz Zdrojek,Włodek Strupiński	2025	1
5	Comprehensive study of β-Ga2O3 epitaxial growth using a variable closed-coupled showerhead MOCVD reactor Applied Physics Reviews ·Aadil Waseem,Sviatlana Vasilevna Pashuk,C. McAleese,Ahmad Albarqawi,Lucas Matarazzo,Daniel M. Dryden,O. Yu. Balalaieva,Xiuling Li	2025	3
6	Near‐ and Far‐Field Observation of Phonon Polaritons in Wafer‐Scale Multilayer Hexagonal Boron Nitride Prepared by Chemical Vapor Deposition Advanced Materials ·Eugenio Calandrini,К. В. Воронин,Osman Balcı,G. Chen,Andrei Bylinkin,Sachin M. Shinde,Subash Sharma,Fèlix Casanova,Luis E. Hueso,Andrey Chuvilin,C. McAleese,Ben R. Conran,Xiaochen Wang,Liang Yan-yan,Valentyn S. Volkov,Andrea C. Ferrari,Alexey Y. Nikitin,Rainer Hillenbrand	2023	4
7	Role of Surface Adsorbates on the Photoresponse of (MO)CVD-Grown Graphene–MoS₂ Heterostructure Photodetectors ACS Applied Materials & Interfaces ·家城隆次,Annika Grundmann,Intan Nur Azzahra,李冬艳,C. McAleese,Xiaochen Wang,Ben R. Conran,Sergej Pasko,Simonas Krotkus,M. Heuken,H. Kalisch,Andrei Vescan,W. Mertin,T. Kümmell,G. Bacher	2022	10
8	Optical and structural properties of dislocations in InGaN Journal of Applied Physics ·Fabien Massabuau,Matthew K. Horton,Miraningrum Nur Atsari,Simon Hammersley,Peiyu Chen,Marcin Zieliński,Harnon,Giorgio Divitini,P. R. Edwards,Menno J. Kappers,C. McAleese,M. A. Moram,C. J. Humphreys,P. Dawson,Rachel A. Oliver	2019	10
9	Fab‐Compatible Graphene: Wafer‐Scale Synthesis of Graphene on Sapphire: Toward Fab‐Compatible Graphene (Small 50/2019) Small ·Neeraj Mishra,Stiven Forti,Filippo Fabbri,Leonardo Martini,C. McAleese,Ben R. Conran,Patrick R. Whelan,Abhay Shivayogimath,Bjarke S. Jessen,کلثوم نادری,J. Falta,J. GRENNAN,Stefano Roddaro,Jan Ingo Flege,Peter Bøggild,Kenneth B. K. Teo,Camilla Coletti	2019	3
10	Structure and strain relaxation effects of defects in InxGa1−xN epilayers Journal of Applied Physics ·A Riveradesala,Wai Yuen Fu,M. A. Moram,Fabien Massabuau,Menno J. Kappers,C. McAleese,Fabrice Oehler,C. J. Humphreys,Rajiv O. Dusane,S.‐L. Sahonta	2014	45
11	Electron holography of an in‐situ biased GaN‐based LED Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Lei Liu,C. McAleese,D.V. Sridhara Rao,M. J. Kappers,C. J. Humphreys	2012	7
12	High‐efficiency InGaN/GaN quantum well structures on large area silicon substrates physica status solidi (a) ·Dandan Zhu,C. McAleese,Zhao Bid,Menno J. Kappers,Nicholas P. Hylton,P. Dawson,Guillaume Radtke,Martin Couillard,G. A. Botton,S.‐L. Sahonta,C. J. Humphreys	2011	10
13	Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys Physical Review B ·David Holec,R. Rachbauer,Daniel Kiener,Vandana Khetarpal Reeti Atreja,Paolo Costa,C. McAleese,P.H. Mayrhofer,C. J. Humphreys	2011	34
14	GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Dandan Zhu,C. McAleese,Ridho Laksono,Zhao Bid,Mert Selamet,E. J. Thrush,Menno J. Kappers,W. A. Phillips,P.A. Lane,D. J. Wallis,Trevor Martin,M.G. Astles,Shawn Thomas,O. Yu. Balalaieva,M. Heuken,C. J. Humphreys	2009	38
15	The origin and reduction of dislocations in Gallium Nitride Journal of Materials Science Materials in Electronics ·Rachel A. Oliver,Menno J. Kappers,C. McAleese,Ranjan Datta,Joy Sumner,C. J. Humphreys	2008	19
16	Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates Applied Physics Letters ·T. J. Badcock,P. Dawson,Menno J. Kappers,C. McAleese,J. L. Hollander,Carol Johnston,D.V. Sridhara Rao,Ana M. Sánchez,C. J. Humphreys	2008	31
17	Atom probe reveals the structure of In_xGa_1–xN based quantum wells in three dimensions physica status solidi (b) ·M. J. Galtrey,Rachel A. Oliver,M. J. Kappers,C. McAleese,Dandan Zhu,C. J. Humphreys,P. H. Clifton,David M. Larsen,A. Cerezo	2008	11
18	High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm Journal of Applied Physics ·D. M. Graham,P. Dawson,Grégoire Chabrol,Nicholas P. Hylton,Dandan Zhu,Menno J. Kappers,C. McAleese,C. J. Humphreys	2007	11
19	The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3 Applied Surface Science ·N. Ketteniss,Rachel A. Oliver,C. McAleese,Menno J. Kappers,Yuchen Zhang,C. J. Humphreys	2007	3
20	Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy Applied Surface Science ·Shova Kumari Chhetri,Rachel A. Oliver,Joy Sumner,C. McAleese,M. J. Kappers,C. J. Humphreys	2006	7

About C. McAleese

C. McAleese is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials, Structural Biology and Materials Chemistry, having authored 65 papers that have together received 1.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (45 papers), Semiconductor materials and devices (22 papers), Metal and Thin Film Mechanics (20 papers), Ga2O3 and related materials (20 papers), ZnO doping and properties (13 papers), Semiconductor Quantum Structures and Devices (11 papers), Graphene research and applications (9 papers) and 2D Materials and Applications (8 papers). The work is most often cited by research in Condensed Matter Physics (904 citations), Electronic, Optical and Magnetic Materials (427 citations), Mechanics of Materials (341 citations), Materials Chemistry (622 citations) and Atomic and Molecular Physics, and Optics (382 citations). C. McAleese has collaborated with scholars based in United Kingdom, United States and Germany. Frequent co-authors include C. J. Humphreys, Menno J. Kappers, J. L. Hollander, M. J. Kappers, D.V. Sridhara Rao, P. Dawson, Rachel A. Oliver, M. E. Vickers, David Holec and T. J. Badcock. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Journal of Crystal Growth, physica status solidi (b) and ACS Applied Materials & Interfaces.

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