T. J. Badcock

2.1k citations

67 papers · 1.7k indexed · h-index 21

Atomic and Molecular Physics, and Optics top 2%
Electrical and Electronic Engineering top 5%
Materials Chemistry top 10%
Condensed Matter Physics top 2%
Electronic, Optical and Magnetic Materials top 10%

Co-authors: M. Hopkinson D. J. Mowbray M. S. Skolnick K. M. Groom Hauyu Baobab Liu Ian R. Sellers P. Dawson C. J. Humphreys
Topics: Semiconductor Quantum Structures and Devices (43 papers)GaN-based semiconductor devices and materials (32 papers)Semiconductor Lasers and Optical Devices (30 papers)
Cited by: Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering
Journals: Applied Physics Letters Journal of Applied Physics Physical Review B
Partner nations: United Kingdom Japan South Korea

In The Last Decade

T. J. Badcock

65 papers receiving 1.6k citations

Peers

Countries citing papers authored by T. J. Badcock

Since Specialization

Citations

This map shows the geographic impact of T. J. Badcock's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. J. Badcock with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. J. Badcock more than expected).

Fields of papers citing papers by T. J. Badcock

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. J. Badcock. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. J. Badcock. The network helps show where T. J. Badcock may publish in the future.

Co-authorship network of co-authors of T. J. Badcock

This figure shows the co-authorship network connecting the top 25 collaborators of T. J. Badcock. A scholar is included among the top collaborators of T. J. Badcock based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. J. Badcock. T. J. Badcock is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures 2016 ·Applied Physics Letters ·T. J. Badcock,(unknown),Tongtong Zhu,Markus Pristovsek,Rachel A. Oliver,A. J. Shields	40
2	Evaluation of growth methods for the heteroepitaxy of non-polar(112¯0)GAN on sapphire by MOVPE 2014 ·Journal of Crystal Growth ·Fabrice Oehler,Duncan S. Sutherland,Tongtong Zhu,(unknown),T. J. Badcock,M. J. Kappers,C. J. Humphreys,P. Dawson,Rachel A. Oliver	11
3	High excitation density recombination dynamics in InGaN/GaN quantum well structures in the droop regime 2014 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Matthew Davies,T. J. Badcock,P. Dawson,Rachel A. Oliver,Menno J. Kappers,C. J. Humphreys	2
4	InGaN/GaN量子井戸構造の高励起キャリア密度再結合ダイナミクス:効率低下の可能な関連性 2013 ·Applied Physics Letters ·Matthew Davies,T. J. Badcock,P. Dawson,Menno J. Kappers,Rachel A. Oliver,C. J. Humphreys	2
5	Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures 2013 ·Japanese Journal of Applied Physics ·T. J. Badcock,Simon Hammersley,Duncan Watson‐Parris,P. Dawson,M. J. Godfrey,Menno J. Kappers,C. McAleese,Rachel A. Oliver,C. J. Humphreys	14
6	Defect Reduction in Semi-Polar (1122) Gallium Nitride Grown Using Epitaxial Lateral Overgrowth 2013 ·Japanese Journal of Applied Physics ·Tongtong Zhu,(unknown),T. J. Badcock,Rui Hao,M. A. Moram,P. Dawson,Menno J. Kappers,Rachel A. Oliver	8
7	The effect of indium concentration on the optical properties of a‐plane InGaN/GaN quantum wells grown on r‐plane sapphire substrates 2011 ·physica status solidi (a) ·T. J. Badcock,Rui Hao,M. A. Moram,P. Dawson,Menno J. Kappers,C. J. Humphreys	4
8	Carrier dynamics in non‐polar GaN/AlGaN quantum wells intersected by basal‐plane stacking faults 2010 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·T. J. Badcock,Simon Hammersley,Menno J. Kappers,C. J. Humphreys,P. Dawson	4
9	Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a ‐plane GaN 2010 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·T. J. Badcock,(unknown),Menno J. Kappers,M. A. Moram,P. Dawson,C. J. Humphreys,Rachel A. Oliver	2
10	Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth 2010 ·Journal of Applied Physics ·(unknown),T. J. Badcock,M. A. Moram,J. L. Hollander,Menno J. Kappers,P. Dawson,C. J. Humphreys,Rachel A. Oliver	17
11	Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates 2008 ·Applied Physics Letters ·T. J. Badcock,P. Dawson,Menno J. Kappers,C. McAleese,J. L. Hollander,Carol Johnston,D.V. Sridhara Rao,Ana M. Sánchez,C. J. Humphreys	31
12	Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer 2008 ·Applied Physics Letters ·Y. D. Jang,T. J. Badcock,D. J. Mowbray,M. S. Skolnick,(unknown),D. Lee,(unknown),M. J. Steer,M. Hopkinson	41
13	GROWTH AND CHARACTERIZATION OF MULTI-LAYER 1.3 μm QUANTUM DOT LASERS 2007 ·International Journal of Nanoscience ·D. J. Mowbray,T. J. Badcock,Ian R. Sellers,A. J. Ramsay,M. S. Skolnick,Huiyun Liu,M. Hopkinson,K. M. Groom,R. A. Hogg,Richard Beanland,David Childs,David Robbins	1
14	Reduced temperature sensitivity of lasing wavelength in near-1.3 µm InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer 2007 ·Electronics Letters ·H.Y. Liu,T. J. Badcock,Chao‐Yuan Jin,(unknown),K. M. Groom,M. Hopkinson,D. J. Mowbray	3
15	Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer 2007 ·Applied Physics Letters ·Chao‐Yuan Jin,Hauyu Baobab Liu,(unknown),Qi Jiang,S. L. Liew,M. Hopkinson,T. J. Badcock,(unknown),D. J. Mowbray	71
16	Observation and Modeling of a Room-Temperature Negative Characteristic Temperature 1.3-$\mu$m p-Type Modulation-Doped Quantum-Dot Laser 2006 ·IEEE Journal of Quantum Electronics ·Chao‐Yuan Jin,T. J. Badcock,Huiyun Liu,K. M. Groom,(unknown),D. J. Mowbray,M. Hopkinson	34
17	High-performance 1.3 µm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature 2006 ·IEE Proceedings - Optoelectronics ·Chao‐Yuan Jin,T. J. Badcock,M. Hopkinson,H.Y. Liu,(unknown),M. Gutiérrez,K. M. Groom,D. J. Mowbray	6
18	Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer 2005 ·Applied Physics Letters ·Hauyu Baobab Liu,M. J. Steer,T. J. Badcock,D. J. Mowbray,M. S. Skolnick,(unknown),K. M. Groom,M. Hopkinson,R. A. Hogg	109
19	High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents 2005 ·IEEE Photonics Technology Letters ·H.Y. Liu,David Childs,T. J. Badcock,K. M. Groom,Ian R. Sellers,M. Hopkinson,R. A. Hogg,David J. Robbins,D. J. Mowbray,M. S. Skolnick	112
20	Mechanism for improvements of optical properties of 1.3-μm InAs∕GaAs quantum dots by a combined InAlAs–InGaAs cap layer 2005 ·Journal of Applied Physics ·Hauyu Baobab Liu,(unknown),Ian R. Sellers,T. J. Badcock,D. J. Mowbray,M. S. Skolnick,Richard Beanland,M. Hopkinson,A. G. Cullis	17

About T. J. Badcock

T. J. Badcock is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 67 papers that have together received 1.7k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (43 papers), GaN-based semiconductor devices and materials (32 papers) and Semiconductor Lasers and Optical Devices (30 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.4k citations), Condensed Matter Physics (499 citations) and Electrical and Electronic Engineering (1.3k citations). T. J. Badcock has collaborated with scholars based in United Kingdom, Japan and South Korea. Frequent co-authors include M. Hopkinson, D. J. Mowbray, M. S. Skolnick, K. M. Groom, Hauyu Baobab Liu, Ian R. Sellers, P. Dawson, C. J. Humphreys, Menno J. Kappers and Rachel A. Oliver. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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