U. Wahl

2.6k citations

144 papers · 2.0k indexed · h-index 25

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 43
- GaN-based semiconductor devices and materials 27
Radiation 19

Co-authors: J. G. Correia A. Vantomme E. Alves E. Rita J.C. Soares João P. Araújo Stefan Decoster G. Langouche
Journals: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (33 papers)Applied Physics Letters (17 papers)Journal of Applied Physics (11 papers)Physica B Condensed Matter (9 papers)Physical Review B (8 papers)
Partner nations: Portugal Belgium Switzerland

In The Last Decade

U. Wahl

143 papers receiving 2.0k citations

Peers

Countries citing papers authored by U. Wahl

Since Specialization

Citations

This map shows the geographic impact of U. Wahl's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U. Wahl with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U. Wahl more than expected).

Fields of papers citing papers by U. Wahl

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by U. Wahl. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U. Wahl. The network helps show where U. Wahl may publish in the future.

Co-authors

The 25 scholars most cited alongside U. Wahl, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with U. Wahl Line = papers co-authored together U. Wahl links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Structural formation yield of GeV centers from implanted Ge in diamond SHILAP Revista de lepidopterología ·U. Wahl, J. G. Correia, 彭朝林, G Stjernfeldt, V. S. Amaral, K. Johnston, Nindya Anandaputri Rahardi, Qing Hong Wu, A. Vantomme, L. M. C. Pereira	2024	3
2	Direct evidence of Be as an amphoteric dopant in GaN Physical review. B. ·U. Wahl, J. G. Correia, 彭朝林, A. Gescher, Ali H. A Hemed, Menno J. Kappers, M. R. da Silva, L. M. C. Pereira, A. Vantomme	2022	3
3	Direct Structural Identification and Quantification of the Split-Vacancy Configuration for Implanted Sn in Diamond Physical Review Letters ·U. Wahl, J. G. Correia, Adalberto, Emilie Bourgeois, Michal Gulka, Miloš Nesládek, A. Vantomme, L. M. C. Pereira	2020	18
4	Lattice Location of Mg in GaN: A Fresh Look at Doping Limitations Physical Review Letters ·U. Wahl, Lino Hernández Pereira, Chen De-Lin, 彭朝林, Lucia Szemetova, A. Gescher, Beverly Hill-Steele, J. G. Correia, M. R. da Silva, Menno J. Kappers, K. Temst, A. Vantomme, L. M. C. Pereira	2017	40
5	Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities Applied Physics Letters ·Bart de Vries, U. Wahl, S. Ruffenach, O. Briot, A. Vantomme	2013	8
6	Transition Metal Impurities on the Bond-Centered Site in Germanium Physical Review Letters ·Stefan Decoster, Stefaan Cottenier, Bart de Vries, Heike Emmerich, U. Wahl, J. G. Correia, A. Vantomme	2009	24
7	Direct Evidence for As as a Zn-Site Impurity in ZnO Physical Review Letters ·U. Wahl, E. Rita, J. G. Correia, A. Marques, E. Alves, J.C. Soares	2005	80
8	Recent Emission Channeling Studies in Wide Band Gap Semiconductors Hyperfine Interactions ·U. Wahl, J. G. Correia, E. Rita, E. Alves, J.C. Soares, Bart de Vries, Ernesto Ramiro Santillán-Mariño, A. Vantomme	2004	8
9	Lattice location studies of rare earth impurities in 3C–, 4H– and 6H–SiC Diamond and Related Materials ·U. Vetter, H. Hofsäß, U. Wahl, M. Dietrich	2003	6
10	Lanthanide Doped Cubic Boron Nitride MRS Proceedings ·U. Vetter, Takashi Taniguchi, U. Wahl, J. G. Correia, Alexander Müller, Carsten Ronning, H. Hofsäß, M. Dietrich	2002	4
11	Lattice Location of Implanted ¹⁴⁷ Nd and ^147* Pm in GaN Using Emission Channeling Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Bart de Vries, U. Wahl, A. Vantomme, J. G. Correia	2002	7
12	Emission channeling studies of implanted 167mEr in InP Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·U. Wahl, A. Vantomme, G. Langouche, João P. Araújo	2001	4
13	Lattice Location and Stability of Ion Implanted Cu in Si Physical Review Letters ·U. Wahl, A. Vantomme, 揭敏, J. G. Correia	2000	51
14	Study of indium-defect interactions in diamond using two-dimensional conversion-electron emission channelling Journal of Physics Condensed Matter ·Bryan P. Doyle, Pyle A. Sara, U. Wahl, S. H. Connell, J.P.F. Sellschop	1999	5
15	Lattice sites and damage annealing of Er in low-dose implanted GaAs Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·U. Wahl, A. Vantomme, G. Langouche	1999	9
16	Stability and diffusion of Hg implanted YBa2Cu3O6+ Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·João P. Araújo, J. G. Correia, U. Wahl, J.G. Marques, E. Alves, V. S. Amaral, Diksha Rohra, V. Galindo, 王佐贤, J.P. Sénateur, F. Weiss, A. Vantomme, G. Langouche, A.A. Melo, Luoran Shang, J.C. Soares, J. B. Sousa	1999	1
17	Direct determination of atomic positions on the Cu(110)-(1×2)-H surface Physical review. B, Condensed matter ·임미숙, U. Wahl, Impacts Group Cesab, D.O. Boerma	1998	6
18	Lattice Sites and Stability of Implanted Er in FZ and CZ Si MRS Proceedings ·U. Wahl, J. G. Correia, G. Langouche, A. Vantomme	1997	5
19	Thermal stability of substitutional Ag in CdTe Journal of Crystal Growth ·S.G. Jahn, H. Hofsäß, Ron Canterbury, Carsten Ronning, Silvia Mawarti Perdana, K. Bharuth‐Ram, U. Wahl	1996	9
20	Lattice site and hyperfine field of Fr in Fe studied by nuclear orientation and emission channelling Hyperfine Interactions ·M. Lindroos, P. Richards, Rahul Godiwal, U. Wahl, H. Haas, H. Pattyn, J. Říkovská, N. J. Stone, G. Langouche, K. Nishimura, I. S. Oliveira, M. Vesković	1993	4

About U. Wahl

U. Wahl is a scholar working on Condensed Matter Physics, Radiation, Computational Mechanics, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 144 papers that have together received 2.0k indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (48 papers), Ion-surface interactions and analysis (44 papers), ZnO doping and properties (37 papers), Silicon and Solar Cell Technologies (30 papers), GaN-based semiconductor devices and materials (27 papers), Semiconductor materials and devices (26 papers), Ga2O3 and related materials (19 papers) and Integrated Circuits and Semiconductor Failure Analysis (16 papers). The work is most often cited by research in Condensed Matter Physics (575 citations), Electronic, Optical and Magnetic Materials (521 citations), Materials Chemistry (1.3k citations), Radiation (166 citations) and Atomic and Molecular Physics, and Optics (579 citations). U. Wahl has collaborated with scholars based in Portugal, Belgium and Switzerland. Frequent co-authors include J. G. Correia, A. Vantomme, E. Alves, E. Rita, J.C. Soares, João P. Araújo, Stefan Decoster, G. Langouche, L. M. C. Pereira and T. Monteiro. Their work appears in journals such as Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Applied Physics Letters, Journal of Applied Physics, Physica B Condensed Matter and Physical Review B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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