M. A. Moram

4.1k citations

90 papers · 3.5k indexed · 1 hit paper · h-index 29

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 75
- GaN-based semiconductor devices and materials 75
Mechanics of Materials 48
- Metal and Thin Film Mechanics 48

Co-authors: M. E. Vickers C. J. Humphreys Menno J. Kappers Carol Johnston Sen Zhang Z. H. Barber M. J. Kappers Mikael Råsander
Journals: Journal of Applied Physics (19 papers)Applied Physics Letters (10 papers)Journal of Crystal Growth (9 papers)physica status solidi (a) (6 papers)Journal of Physics D Applied Physics (4 papers)
Partner nations: United Kingdom India Japan

In The Last Decade

M. A. Moram

90 papers receiving 3.4k citations

Hit Papers

align trajectories log scale

X-ray diffraction of III-nitrides 2009 · 911 citations

Peers

Countries citing papers authored by M. A. Moram

Since Specialization

Citations

This map shows the geographic impact of M. A. Moram's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. A. Moram with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. A. Moram more than expected).

Fields of papers citing papers by M. A. Moram

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. A. Moram. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. A. Moram. The network helps show where M. A. Moram may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. A. Moram, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. A. Moram Line = papers co-authored together M. A. Moram links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Optical and structural properties of dislocations in InGaN Journal of Applied Physics ·Fabien Massabuau, Matthew K. Horton, Miraningrum Nur Atsari, Simon Hammersley, Peiyu Chen, Marcin Zieliński, Harnon, Giorgio Divitini, P. R. Edwards, Menno J. Kappers, C. McAleese, M. A. Moram, C. J. Humphreys, P. Dawson, Rachel A. Oliver	2019	10
2	Band gap bowing in NixMg1−xO Scientific Reports ·Xiaoying Huang, Mikael Råsander, Sneha Rhode, Matheus Cardoso dos Santos, Bin Zou, Neil McN. Alford, M. A. Moram	2016	48
3	Sc x Ga 1-x N/AlNとSc x Ga 1-x N/GaNヘテロ接合の価電子帯オフセット Journal of Physics D Applied Physics ·M. Y. Taşmektepli̇gi̇l, Z.-G. Liu, Robert G. Palgrave, Harvey E. Beere, I. Farrer, D. A. Ritchie, M. A. Moram	2016	4
4	Valence band offsets of Sc_xGa_1−xN/AlN and Sc_xGa_1−xN/GaN heterojunctions Journal of Physics D Applied Physics ·M. Y. Taşmektepli̇gi̇l, Z.-G. Liu, Robert G. Palgrave, Harvey E. Beere, I. Farrer, D. A. Ritchie, M. A. Moram	2016	9
5	Piezoelectric coefficients and spontaneous polarization of ScAlN Journal of Physics Condensed Matter ·A. Miguel, Siyuan Zhang, Tommi Riekkinen, Markku Ylilammi, M. A. Moram, Olga Lopez‐Acevedo, Jyrki Molarius, Tomi Laurila	2015	285
6	The effect of metal‐rich growth conditions on the microstructure of Sc_xGa_1−xN films grown using molecular beam epitaxy physica status solidi (a) ·M. Y. Taşmektepli̇gi̇l, Z.-G. Liu, N.P. Barradas, E. Alves, S. Pereira, Harvey E. Beere, I. Farrer, C. A. Nicoll, D. A. Ritchie, M. A. Moram	2015	16
7	Segregation of In to Dislocations in InGaN Nano Letters ·Matthew K. Horton, Sneha Rhode, S.‐L. Sahonta, Menno J. Kappers, Sarah J. Haigh, Timothy J. Pennycook, C. J. Humphreys, Rajiv O. Dusane, M. A. Moram	2015	49
8	Structure and strain relaxation effects of defects in InxGa1−xN epilayers Journal of Applied Physics ·A Riveradesala, Wai Yuen Fu, M. A. Moram, Fabien Massabuau, Menno J. Kappers, C. McAleese, Fabrice Oehler, C. J. Humphreys, Rajiv O. Dusane, S.‐L. Sahonta	2014	45
9	Optical fluence modelling for ultraviolet light emitting diode-based water treatment systems Water Research ·Pedro Lucas da Cruz de Oliveira, Jeannine Finton, M. A. Moram	2014	26
10	Mg Doping Affects Dislocation Core Structures in GaN Physical Review Letters ·Sneha Rhode, Matthew K. Horton, Menno J. Kappers, Patricia R. Calvo, C. J. Humphreys, Rajiv O. Dusane, S.‐L. Sahonta, M. A. Moram	2013	54
11	Growth, microstructure and morphology of epitaxial ScGaN films physica status solidi (a) ·N. C. F., Sen Zhang, T.B. Joyce, Menno J. Kappers, C. J. Humphreys, M. A. Moram	2011	14
12	The effect of indium concentration on the optical properties of a‐plane InGaN/GaN quantum wells grown on r‐plane sapphire substrates physica status solidi (a) ·T. J. Badcock, Rui Hao, M. A. Moram, P. Dawson, Menno J. Kappers, C. J. Humphreys	2011	4
13	Dislocation movement in GaN films Applied Physics Letters ·M. A. Moram, Alicia Ling, Zhao Bid, Menno J. Kappers, C. J. Humphreys	2010	43
14	Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices Applied Physics Letters ·Awad Hesh, А. В. Акимов, A. J. Kent, B. A. Glavin, M. J. Kappers, J. L. Hollander, M. A. Moram, C. J. Humphreys	2009	10
15	The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films Journal of Physics D Applied Physics ·M. A. Moram, Carol Johnston, Menno J. Kappers, C. J. Humphreys	2009	22
16	Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers Applied Physics Letters ·Carol Johnston, M. A. Moram, M. J. Kappers, C. J. Humphreys	2009	50
17	The effect of wafer curvature on x-ray rocking curves from gallium nitride films Journal of Applied Physics ·M. A. Moram, M. E. Vickers, Menno J. Kappers, C. J. Humphreys	2008	23
18	Growth of epitaxial thin films of scandium nitride on 100-oriented silicon Journal of Crystal Growth ·M. A. Moram, С. В. Новиков, A. J. Kent, 文雄栗林, C. T. Foxon, C. J. Humphreys	2008	28
19	Interlayer methods for reducing the dislocation density in gallium nitride Physica B Condensed Matter ·Menno J. Kappers, M. A. Moram, Yuchen Zhang, M. E. Vickers, Z. H. Barber, C. J. Humphreys	2007	22
20	Chemical and Physical Analysis of Acetate-Oxide Sol-Gel Processing Routes for the Y-Ba-Cu-O System Journal of Sol-Gel Science and Technology ·Kelli R. Lyons, M. A. Moram, Joy Sumner, B.A. Głowacki, 宋林飞, Isabel Van Driessche, Serge Hoste	2005	17

About M. A. Moram

M. A. Moram is a scholar working on Condensed Matter Physics, Mechanics of Materials, Electronic, Optical and Magnetic Materials, Materials Chemistry and Electrical and Electronic Engineering, having authored 90 papers that have together received 3.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (75 papers), Metal and Thin Film Mechanics (48 papers), Semiconductor materials and devices (34 papers), ZnO doping and properties (26 papers), Ga2O3 and related materials (20 papers), Acoustic Wave Resonator Technologies (14 papers), Semiconductor Quantum Structures and Devices (5 papers) and Electronic and Structural Properties of Oxides (5 papers). The work is most often cited by research in Condensed Matter Physics (2.6k citations), Electronic, Optical and Magnetic Materials (1.0k citations), Mechanics of Materials (1.3k citations), Materials Chemistry (1.6k citations) and Biomedical Engineering (1.0k citations). M. A. Moram has collaborated with scholars based in United Kingdom, India and Japan. Frequent co-authors include M. E. Vickers, C. J. Humphreys, Menno J. Kappers, Carol Johnston, Sen Zhang, Z. H. Barber, M. J. Kappers, Mikael Råsander, Sneha Rhode and J. L. Hollander. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Journal of Crystal Growth, physica status solidi (a) and Journal of Physics D Applied Physics.

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