Simon Hammersley

458 citations

28 papers · 389 indexed · h-index 13

Co-authors: P. Dawson C. J. Humphreys Rachel A. Oliver Menno J. Kappers Fabien Massabuau T. J. Badcock Duncan Watson‐Parris C. McAleese
Topics: GaN-based semiconductor devices and materials (22 papers)Ga2O3 and related materials (14 papers)Semiconductor Quantum Structures and Devices (9 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters Journal of Applied Physics Chemistry of Materials
Partner nations: United Kingdom Germany China

In The Last Decade

Simon Hammersley

27 papers receiving 374 citations

Peers

Countries citing papers authored by Simon Hammersley

Since Specialization

Citations

This map shows the geographic impact of Simon Hammersley's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Simon Hammersley with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Simon Hammersley more than expected).

Fields of papers citing papers by Simon Hammersley

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Simon Hammersley. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Simon Hammersley. The network helps show where Simon Hammersley may publish in the future.

Co-authorship network of co-authors of Simon Hammersley

This figure shows the co-authorship network connecting the top 25 collaborators of Simon Hammersley. A scholar is included among the top collaborators of Simon Hammersley based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Simon Hammersley. Simon Hammersley is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Investigating the exciton dynamics in InGaN/GaN core-shell nanorods using time-resolved cathodoluminescence 2024 ·Nanotechnology ·(unknown),Gunnar Kusch,O. Brandt,Pierre‐Marie Coulon,Simon Hammersley,Jonas Lähnemann,(unknown),Simon M. Fairclough,(unknown),Philip A. Shields,Rachel A. Oliver	0
2	GaN surface sputter damage investigated using deep level transient spectroscopy 2021 ·Materials Science in Semiconductor Processing ·(unknown),Simon Hammersley,В. П. Маркевич,I.D. Hawkins,Iain F. Crowe,Trevor Martin,(unknown),Matthew P. Halsall	2
3	Minority carrier traps in Czochralski-grown p-type silicon crystals doped with B, Al, Ga, or In impurity atoms 2020 ·Research Explorer (The University of Manchester) ·(unknown),В. П. Маркевич,Simon Hammersley,I.D. Hawkins,Iain F. Crowe,N. V. Abrosimov,R. Falster,(unknown),Pietro P. Altermatt,Matthew P. Halsall,А. R. Peaker	1
4	Optical and structural properties of dislocations in InGaN 2019 ·Journal of Applied Physics ·Fabien Massabuau,Matthew K. Horton,(unknown),Simon Hammersley,Peiyu Chen,Marcin Zieliński,(unknown),Giorgio Divitini,P. R. Edwards,Menno J. Kappers,C. McAleese,M. A. Moram,C. J. Humphreys,P. Dawson,Rachel A. Oliver	10
5	Optical properties of c -Plane InGaN/GaN single quantum wells as a function of total electric field strength 2019 ·Japanese Journal of Applied Physics ·(unknown),Stefan Schulz,Simon Hammersley,Menno J. Kappers,Martin Frentrup,C. J. Humphreys,Rachel A. Oliver,P. Dawson	5
6	Effect of stacking faults on the photoluminescence spectrum of zincblende GaN 2018 ·Journal of Applied Physics ·(unknown),Simon Hammersley,P.W. Mitchell,Menno J. Kappers,(unknown),Fabien Massabuau,S.‐L. Sahonta,Martin Frentrup,(unknown),D. J. Wallis,C. J. Humphreys,Rachel A. Oliver,David J. Binks,P. Dawson	14
7	Photoluminescence studies of cubic GaN epilayers 2017 ·physica status solidi (b) ·(unknown),Simon Hammersley,P.W. Mitchell,Menno J. Kappers,S.‐L. Sahonta,Martin Frentrup,Daniel Nilsson,Peter J. Ward,(unknown),D. J. Wallis,C. J. Humphreys,Rachel A. Oliver,David J. Binks,P. Dawson	19
8	Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells 2016 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown),Simon Hammersley,Matthew Davies,P. Dawson,Menno J. Kappers,Fabien Massabuau,Rachel A. Oliver,C. J. Humphreys	7
9	Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time‐resolved terahertz and photoluminescence spectroscopy 2016 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown),Ben F. Spencer,Samantha J. O. Hardman,D. M. Graham,Simon Hammersley,Matthew Davies,P. Dawson,Menno J. Kappers,Rachel A. Oliver,C. J. Humphreys	1
10	Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures 2016 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Simon Hammersley,Menno J. Kappers,Fabien Massabuau,S.‐L. Sahonta,P. Dawson,Rachel A. Oliver,C. J. Humphreys	6
11	Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs 2016 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Simon Hammersley,P. Dawson,Menno J. Kappers,Fabien Massabuau,Martin Frentrup,Rachel A. Oliver,C. J. Humphreys	1
12	Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells 2016 ·Applied Physics Letters ·Michael J. Davies,P. Dawson,Simon Hammersley,Tongtong Zhu,M. J. Kappers,C. J. Humphreys,Rachel A. Oliver	20
13	Diatom Frustules as a Biomineralized Scaffold for the Growth of Molybdenum Disulfide Nanosheets 2016 ·Chemistry of Materials ·Edward A. Lewis,David J. Lewis,Aleksander A. Tedstone,(unknown),Simon Hammersley,P. Dawson,David J. Binks,Paul O’Brien,Sarah J. Haigh	15
14	A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers 2016 ·Journal of Applied Physics ·Michael J. Davies,Simon Hammersley,Fabien Massabuau,P. Dawson,Rachel A. Oliver,Menno J. Kappers,C. J. Humphreys	15
15	Processing online crop disease warning information via sensor networks using ISA ontologies 2013 ·Research Explorer (The University of Manchester) ·Patrick Jackman,Alasdair J. G. Gray,Andy Brass,Robert Stevens,Ming Shi,(unknown),Simon Hammersley,Bruce Grieve	1
16	Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures 2013 ·Japanese Journal of Applied Physics ·T. J. Badcock,Simon Hammersley,Duncan Watson‐Parris,P. Dawson,M. J. Godfrey,Menno J. Kappers,C. McAleese,Rachel A. Oliver,C. J. Humphreys	14
17	The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures 2012 ·Journal of Applied Physics ·Simon Hammersley,Duncan Watson‐Parris,P. Dawson,M. J. Godfrey,T. J. Badcock,Menno J. Kappers,C. McAleese,Rachel A. Oliver,C. J. Humphreys	94
18	On the origin of blue‐green emission from heteroepitaxial nonpolar a‐plane InGaN quantum wells 2012 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Menno J. Kappers,T. J. Badcock,Rui Hao,M. A. Moram,Simon Hammersley,P. Dawson,C. J. Humphreys	4
19	Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure 2011 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Simon Hammersley,T. J. Badcock,Duncan Watson‐Parris,M. J. Godfrey,P. Dawson,Menno J. Kappers,C. J. Humphreys	15
20	Carrier dynamics in non‐polar GaN/AlGaN quantum wells intersected by basal‐plane stacking faults 2010 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·T. J. Badcock,Simon Hammersley,Menno J. Kappers,C. J. Humphreys,P. Dawson	4

About Simon Hammersley

Simon Hammersley is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 28 papers that have together received 389 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (14 papers) and Semiconductor Quantum Structures and Devices (9 papers). The work is most often cited by research in Condensed Matter Physics (317 citations), Electronic, Optical and Magnetic Materials (128 citations) and Atomic and Molecular Physics, and Optics (176 citations). Simon Hammersley has collaborated with scholars based in United Kingdom, Germany and China. Frequent co-authors include P. Dawson, C. J. Humphreys, Rachel A. Oliver, Menno J. Kappers, Fabien Massabuau, T. J. Badcock, Duncan Watson‐Parris, C. McAleese, M. J. Godfrey and S.‐L. Sahonta. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Chemistry of Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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