Tetsuya Takeuchi

9.9k total citations · 6 hit papers
307 papers, 8.3k citations indexed

About

Tetsuya Takeuchi is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Tetsuya Takeuchi has authored 307 papers receiving a total of 8.3k indexed citations (citations by other indexed papers that have themselves been cited), including 267 papers in Condensed Matter Physics, 122 papers in Electronic, Optical and Magnetic Materials and 116 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Tetsuya Takeuchi's work include GaN-based semiconductor devices and materials (267 papers), Ga2O3 and related materials (120 papers) and Semiconductor Quantum Structures and Devices (115 papers). Tetsuya Takeuchi is often cited by papers focused on GaN-based semiconductor devices and materials (267 papers), Ga2O3 and related materials (120 papers) and Semiconductor Quantum Structures and Devices (115 papers). Tetsuya Takeuchi collaborates with scholars based in Japan, United States and China. Tetsuya Takeuchi's co-authors include Isamu Akasaki, Hiroshi Amano, Motoaki Iwaya, Satoshi Kamiyama, Shigetoshi Sota, Christian Wetzel, Isamu Akasaki Isamu Akasaki, Hideo Takeuchi, Shigeo Yamaguchi and Hiromitsu Sakai and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Tetsuya Takeuchi

299 papers receiving 8.0k citations

Hit Papers

Quantum-Confined Stark Effect due to Piezoelectric Fields... 1993 2026 2004 2015 1997 1998 2000 1997 2011 250 500 750 1000
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
    1997 1.0k citations Tetsuya Takeuchi et al. Japanese Journal of Applied Physics profile →
  2. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
    1998 541 citations Tetsuya Takeuchi, Isamu Akasaki et al. Applied Physics Letters profile →
  3. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
    2000 440 citations Tetsuya Takeuchi, Isamu Akasaki et al. Japanese Journal of Applied Physics profile →
  4. Optical Properties of Strained AlGaN and GaInN on GaN
    1997 285 citations Tetsuya Takeuchi et al. Japanese Journal of Applied Physics profile →
  5. Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
    2011 241 citations Motoaki Iwaya, Tetsuya Takeuchi et al. Applied Physics Express profile →
  6. The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
    1993 229 citations Tetsuya Takeuchi, Isamu Akasaki et al. Journal of Crystal Growth profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tetsuya Takeuchi Japan 40 7.3k 3.4k 3.3k 2.9k 2.5k 307 8.3k
Satoshi Kamiyama Japan 44 6.6k 0.9× 3.6k 1.1× 2.2k 0.7× 3.5k 1.2× 3.2k 1.3× 529 8.7k
Feng Wu United States 52 6.9k 0.9× 3.7k 1.1× 2.4k 0.7× 3.8k 1.3× 2.4k 1.0× 197 8.0k
Yukio Narukawa Japan 35 5.1k 0.7× 2.6k 0.8× 2.7k 0.8× 3.2k 1.1× 2.0k 0.8× 81 7.1k
Motoaki Iwaya Japan 43 6.2k 0.8× 3.4k 1.0× 1.7k 0.5× 2.8k 1.0× 2.0k 0.8× 390 6.8k
A. Krost Germany 50 5.2k 0.7× 3.0k 0.9× 2.9k 0.9× 4.6k 1.6× 4.5k 1.8× 323 9.4k
S. Einfeldt Germany 39 4.7k 0.6× 2.6k 0.8× 1.4k 0.4× 2.6k 0.9× 2.0k 0.8× 231 5.7k
Kazumasa Hiramatsu Japan 38 6.9k 0.9× 3.3k 1.0× 2.2k 0.7× 3.5k 1.2× 2.3k 0.9× 200 7.7k
Yasushi Nanishi Japan 35 4.3k 0.6× 2.6k 0.7× 1.9k 0.6× 2.4k 0.8× 1.5k 0.6× 228 5.4k
Ramón Collazo United States 43 5.1k 0.7× 3.0k 0.9× 1.1k 0.3× 2.5k 0.9× 2.7k 1.1× 272 6.5k
J. Smart United States 32 6.3k 0.9× 3.2k 0.9× 2.3k 0.7× 2.3k 0.8× 4.1k 1.6× 75 7.8k

Countries citing papers authored by Tetsuya Takeuchi

Since Specialization
Citations

This map shows the geographic impact of Tetsuya Takeuchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tetsuya Takeuchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tetsuya Takeuchi more than expected).

Fields of papers citing papers by Tetsuya Takeuchi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tetsuya Takeuchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tetsuya Takeuchi. The network helps show where Tetsuya Takeuchi may publish in the future.

Co-authorship network of co-authors of Tetsuya Takeuchi

This figure shows the co-authorship network connecting the top 25 collaborators of Tetsuya Takeuchi. A scholar is included among the top collaborators of Tetsuya Takeuchi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tetsuya Takeuchi. Tetsuya Takeuchi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Takeuchi, Tetsuya, et al.. (2024). In Situ Center Wavelength Control of AlInN/GaN Distributed Bragg Reflectors with In Situ Reflectivity Spectra Measurements. physica status solidi (b). 261(11). 1 indexed citations
3.
Hasegawa, Naoki, Norikatsu Koide, Tetsuya Takeuchi, et al.. (2024). Characteristics of Stacked GaInN‐Based Red, Green, and Blue Full‐Color Monolithic μLED Arrays Connected via Tunnel Junctions. physica status solidi (a). 221(21). 2 indexed citations
4.
Chichibu, Shigefusa F., et al.. (2023). Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate. Applied Physics Letters. 122(20). 8 indexed citations
5.
Hasegawa, Naoki, Tetsuya Takeuchi, Satoshi Kamiyama, et al.. (2023). RGB monolithic GaInN-based μLED arrays connected via tunnel junctions. Applied Physics Express. 16(8). 84001–84001. 19 indexed citations
6.
7.
Iwayama, Sho, Tetsuya Takeuchi, Satoshi Kamiyama, et al.. (2022). A method for exfoliating AlGaN films from sapphire substrates using heated and pressurized water. Applied Physics Express. 15(11). 116502–116502. 4 indexed citations
8.
Tanaka, Shunya, Kazuki Yamada, Sho Iwayama, et al.. (2022). Reduction of dislocation density in lattice-relaxed Al0.68Ga0.32N film grown on periodical 1 μm spacing AlN pillar concave-convex patterns and its effect on the performance of UV-B laser diodes. Applied Physics Express. 15(3). 31004–31004. 18 indexed citations
9.
Tanaka, Takayuki, et al.. (2022). High-quality n-type conductive Si-doped AlInN/GaN DBRs with hydrogen cleaning. Applied Physics Express. 15(11). 112007–112007. 4 indexed citations
10.
Iwaya, Motoaki, Shunya Tanaka, Kazuki Yamada, et al.. (2021). Recent development of UV-B laser diodes. Japanese Journal of Applied Physics. 61(4). 40501–40501. 19 indexed citations
11.
Tanaka, Shunya, Kazuki Yamada, Sho Iwayama, et al.. (2021). AlGaN-based UV-B laser diode with a high optical confinement factor. Applied Physics Letters. 118(16). 36 indexed citations
12.
Tanaka, Shunya, Kosuke Sato, Motoaki Iwaya, et al.. (2020). Effects of Mg and Si doping in the guide layers of AlGaN-based ultraviolet-B band lasers. Journal of Crystal Growth. 535. 125537–125537. 13 indexed citations
13.
Iwayama, Sho, Motoaki Iwaya, Tetsuya Takeuchi, et al.. (2020). High Crystallinity and Highly Relaxed Al0.60Ga0.40N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing. physica status solidi (a). 217(14). 18 indexed citations
14.
Iida, Kazuyoshi, Weifang Lu, Atsushi Suzuki, et al.. (2020). MOVPE growth of n-GaN cap layer on GaInN/GaN multi-quantum shell LEDs. Journal of Crystal Growth. 539. 125571–125571. 6 indexed citations
15.
Iwaya, Motoaki, et al.. (2019). High photosensitivity AlGaN/GaInN/GaN heterojunction field-effect transistor type visible photosensors. Japanese Journal of Applied Physics. 58(SC). SCCC22–SCCC22. 2 indexed citations
16.
Yamamoto, Kengo, Dong‐Pyo Han, Satoshi Kamiyama, et al.. (2019). Optimization of indium tin oxide layer thickness for surface-plasmon-enhanced green light-emitting diodes. Japanese Journal of Applied Physics. 58(SC). SCCC27–SCCC27. 3 indexed citations
17.
Han, Dong‐Pyo, Kengo Yamamoto, Satoshi Kamiyama, et al.. (2019). Improvement of emission efficiency with a sputtered AlN buffer layer in GaInN-based green light-emitting diodes. Japanese Journal of Applied Physics. 58(SC). SC1040–SC1040. 7 indexed citations
18.
Kim, Myung‐Hee Y., Yoshiki Saito, Kazuyoshi Iida, et al.. (2019). Sapphire substrate off-angle and off-direction dependences on characteristics of AlGaN-based deep ultraviolet light-emitting diodes. Japanese Journal of Applied Physics. 58(SC). SC1025–SC1025. 14 indexed citations
19.
Iida, Kazuyoshi, Atsushi Suzuki, Hideki Murakami, et al.. (2019). Hybrid simulation of light extraction efficiency in multi-quantum-shell (MQS) NW (nanowire) LED with a current diffusion layer. Japanese Journal of Applied Physics. 58(SC). SCCC17–SCCC17. 12 indexed citations
20.
Iwayama, Sho, Motoaki Iwaya, Tetsuya Takeuchi, et al.. (2019). Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers. Japanese Journal of Applied Physics. 58(SC). SC1052–SC1052. 38 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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