S. B. Fleischer

1.6k citations

20 papers · 1.4k indexed · h-index 12

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 10
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 5
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 10
Materials Chemistry top 10%
- Graphene research and applications 2
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 5
- Photonic and Optical Devices 4
- Semiconductor Lasers and Optical Devices 4
Mechanics of Materials
- Muon and positron interactions and applications 5

Co-authors: John E. Bowers Steven P. DenBaars S. Keller Umesh K. Mishra M. S. Minsky Evelyn L. Hu A. Abare Shigefusa F. Chichibu
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters (8 papers)Applied Surface Science (2 papers)Journal of Crystal Growth (1 paper)
Partner nations: United States Hong Kong United Kingdom

In The Last Decade

S. B. Fleischer

18 papers receiving 1.3k citations

Peers

Countries citing papers authored by S. B. Fleischer

Since Specialization

Citations

This map shows the geographic impact of S. B. Fleischer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. B. Fleischer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. B. Fleischer more than expected).

Fields of papers citing papers by S. B. Fleischer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. B. Fleischer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. B. Fleischer. The network helps show where S. B. Fleischer may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. B. Fleischer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. B. Fleischer Line = papers co-authored together S. B. Fleischer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Low dark current p-i-n (Al,Ga)N-based solar-blind UV detectors on laterally epitaxially overgrown GaN Giacinta Parish,S. Keller,P. Kozodoy,J. P. Ibbetson,H. Marchand,P. Fini,S. B. Fleischer,Steven P. DenBaars,Umesh K. Mishra,E. J. Tarsa	2002	1
2	Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics Applied Physics Letters ·C. Kadow,S. B. Fleischer,J. P. Ibbetson,John E. Bowers,A. C. Gossard,Jing Dong,C. J. Palmstrøm	1999	110
3	Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates Applied Physics Letters ·C. Kadow,S. B. Fleischer,J. P. Ibbetson,John E. Bowers,A. C. Gossard	1999	9
4	Effect of the Confinement Layer Design on the Luminescence of InGaN/GaN Single Quantum Wells physica status solidi (b) ·S. Keller,S. B. Fleischer,Shigefusa F. Chichibu,John E. Bowers,Umesh K. Mishra,Steven P. DenBaars	1999	3
5	A study of the vacancy-defect distribution in a GaAs/AlxGa1−xAs multi-layer structure grown at low temperature Journal of Crystal Growth ·S. B. Fleischer,C. Surya,Yongfeng Hu,C. D. Beling,S. Fung,T. L. Smith,Keith M. Moulding,M. Missous	1999	2
6	Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth Applied Physics Letters ·Shigefusa F. Chichibu,H. Marchand,M. S. Minsky,S. Keller,P. Fini,J. P. Ibbetson,S. B. Fleischer,James S. Speck,John E. Bowers,Evelyn L. Hu,Umesh K. Mishra,Steven P. DenBaars,Takahiro Deguchi,T. Sota,Shuji Nakamura	1999	147
7	High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN Applied Physics Letters ·Giacinta Parish,S. Keller,P. Kozodoy,J. P. Ibbetson,H. Marchand,P. Fini,S. B. Fleischer,Steven P. DenBaars,Umesh K. Mishra,E. J. Tarsa	1999	277
8	Positron beam study of low-temperature-grown GaAs with aluminum delta layers Applied Surface Science ·S. B. Fleischer,Yongfeng Hu,C. D. Beling,S. Fung,T. L. Smith,Keith M. Moulding,Huihui Weng,M. Missous	1999	0
9	Optical properties of InGaN quantum wells Materials Science and Engineering B ·Shigefusa F. Chichibu,A. Abare,M. Mack,M. S. Minsky,Takahiro Deguchi,Daniel A. Cohen,P. Kozodoy,S. B. Fleischer,S. Keller,James S. Speck,John E. Bowers,Evelyn L. Hu,Umesh K. Mishra,L.A. Coldren,Steven P. DenBaars,Kazumi Wada,T. Sota,Shuji Nakamura	1999	155
10	High-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector IEEE Photonics Technology Letters ·Yi‐Jen Chiu,S. B. Fleischer,John E. Bowers	1998	33
11	GaAs-based, 1.55 µm high speed, high saturationpower, low-temperaturegrown GaAs pin photodetector Electronics Letters ·維斗小丸,S. Viti,S. B. Fleischer,John E. Bowers,Umesh K. Mishra	1998	13
12	High-power, high-speed, low-temperature-grown GaAs p-i-n traveling-wave photodetector Yi‐Jen Chiu,S. B. Fleischer,John E. Bowers,A. C. Gossard,Umesh K. Mishra	1998	2
13	Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures Applied Physics Letters ·Shigefusa F. Chichibu,A. Abare,M. S. Minsky,S. Keller,S. B. Fleischer,John E. Bowers,Evelyn L. Hu,Umesh K. Mishra,L.A. Coldren,Steven P. DenBaars,T. Sota	1998	387
14	Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes Applied Physics Letters ·Shigefusa F. Chichibu,Martin Stather,M. Mack,A. Abare,P. Kozodoy,M. S. Minsky,S. B. Fleischer,S. Keller,John E. Bowers,Umesh K. Mishra,L. A. Coldren,David R. Clarke,Steven P. DenBaars	1998	54
15	Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers Japanese Journal of Applied Physics ·M. S. Minsky,Shigefusa F. Chichibu,S. B. Fleischer,A. Abare,John E. Bowers,Evelyn L. Hu,S. Keller,Umesh K. Mishra,Steven P. DenBaars	1998	28
16	Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence Applied Physics Letters ·M. S. Minsky,S. B. Fleischer,A. Abare,John E. Bowers,Evelyn L. Hu,S. Keller,Steven P. DenBaars	1998	74
17	Ultrafast (370 GHz bandwidth) p-i-n traveling wave photodetector using low-temperature-grown GaAs Applied Physics Letters ·Yi‐Jen Chiu,S. B. Fleischer,Daniel Lasaosa,John E. Bowers	1997	20
18	Structural and defect characterization of GaAs and AlxGa1−xAs grown at low temperature by molecular beam epitaxy Journal of Applied Physics ·S. B. Fleischer,C. D. Beling,S. Fung,Andrés Felipe Salcedo Patarroyo,Elma Mahfuzhoh,Jiongzhi Zheng,M. Missous	1997	37
19	Doppler-broadening measurements of microvoids at the Au/GaAs interface Applied Physics A ·C. C. Ling,藤井玄二,Карен Шаинян,S. B. Fleischer,C. D. Beling,S. Fung	1995	2
20	Deconvolution of Doppler-broadened positron annihilation lineshapes by the generalised least-squares method Applied Surface Science ·Карен Шаинян,S. B. Fleischer,C. C. Ling,C. D. Beling,S. Fung,F. Lozano	1995	5

About S. B. Fleischer

S. B. Fleischer is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Instrumentation and Mechanics of Materials, having authored 20 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (10 papers), GaN-based semiconductor devices and materials (10 papers), Ga2O3 and related materials (5 papers), Semiconductor materials and devices (5 papers), Muon and positron interactions and applications (5 papers), Photonic and Optical Devices (4 papers), Semiconductor Lasers and Optical Devices (4 papers) and Graphene research and applications (2 papers). The work is most often cited by research in Condensed Matter Physics (1.0k citations), Electronic, Optical and Magnetic Materials (583 citations), Atomic and Molecular Physics, and Optics (673 citations), Materials Chemistry (446 citations) and Electrical and Electronic Engineering (442 citations). S. B. Fleischer has collaborated with scholars based in United States, Hong Kong and United Kingdom. Frequent co-authors include John E. Bowers, Steven P. DenBaars, S. Keller, Umesh K. Mishra, M. S. Minsky, Evelyn L. Hu, A. Abare, Shigefusa F. Chichibu, J. P. Ibbetson and T. Sota. Their work appears in journals such as Applied Physics Letters, Applied Surface Science, Journal of Crystal Growth, Japanese Journal of Applied Physics and Electronics Letters.

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