E. Rije

458 total citations
12 papers, 370 citations indexed

About

E. Rije is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, E. Rije has authored 12 papers receiving a total of 370 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in E. Rije's work include Semiconductor materials and devices (7 papers), Semiconductor materials and interfaces (4 papers) and Ferroelectric and Negative Capacitance Devices (4 papers). E. Rije is often cited by papers focused on Semiconductor materials and devices (7 papers), Semiconductor materials and interfaces (4 papers) and Ferroelectric and Negative Capacitance Devices (4 papers). E. Rije collaborates with scholars based in Germany, Belgium and United States. E. Rije's co-authors include S. Mantl, U. Breuer, St. Lenk, Qing‐Tai Zhao, Rainer Waser, M. Roeckerath, J. Schubert, Stephen Ducharme, Timothy J. Reece and Andreas Gerber and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

E. Rije

12 papers receiving 353 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. Rije Germany 9 312 165 127 75 39 12 370
R. Lupták Germany 13 356 1.1× 182 1.1× 67 0.5× 64 0.9× 64 1.6× 33 415
Michael Y. Levy United States 10 396 1.3× 249 1.5× 211 1.7× 97 1.3× 10 0.3× 15 482
Xueyan Wang China 10 114 0.4× 203 1.2× 68 0.5× 44 0.6× 38 1.0× 16 286
Dongyang Yang Canada 7 235 0.8× 363 2.2× 84 0.7× 64 0.9× 62 1.6× 12 432
N. Lakshminarayan South Korea 10 315 1.0× 248 1.5× 66 0.5× 42 0.6× 30 0.8× 16 368
Thomas A. Empante United States 5 162 0.5× 296 1.8× 65 0.5× 43 0.6× 34 0.9× 5 335
S. N. South Korea 5 198 0.6× 266 1.6× 172 1.4× 128 1.7× 49 1.3× 7 369
P. Leszczyński Poland 6 162 0.5× 264 1.6× 59 0.5× 34 0.5× 30 0.8× 6 318
M. L. Bolen United States 9 166 0.5× 398 2.4× 92 0.7× 89 1.2× 28 0.7× 11 443
M. Koike Japan 13 369 1.2× 140 0.8× 90 0.7× 71 0.9× 21 0.5× 34 429

Countries citing papers authored by E. Rije

Since Specialization
Citations

This map shows the geographic impact of E. Rije's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Rije with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Rije more than expected).

Fields of papers citing papers by E. Rije

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Rije. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Rije. The network helps show where E. Rije may publish in the future.

Co-authorship network of co-authors of E. Rije

This figure shows the co-authorship network connecting the top 25 collaborators of E. Rije. A scholar is included among the top collaborators of E. Rije based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Rije. E. Rije is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

12 of 12 papers shown
1.
Gerber, Andreas, Rainer Waser, Timothy J. Reece, et al.. (2010). Ferroelectric field effect transistors using very thin ferroelectric polyvinylidene fluoride copolymer films as gate dielectrics. Journal of Applied Physics. 107(12). 24 indexed citations
2.
Shamuilia, S., A. Stesmans, Stephen A. Campbell, et al.. (2008). Photoconductivity of Hf-based binary metal oxides. Microelectronic Engineering. 85(12). 2400–2402. 2 indexed citations
4.
Thomas, Reji, E. Rije, P. Ehrhart, et al.. (2007). Thin Films of HfO[sub 2] for High-k Gate Oxide Applications from Engineered Alkoxide- and Amide-Based MOCVD Precursors. Journal of The Electrochemical Society. 154(3). G77–G77. 20 indexed citations
5.
Thomas, Reji, P. Ehrhart, M. Roeckerath, et al.. (2007). Liquid Injection MOCVD of Dysprosium Scandate Films. Journal of The Electrochemical Society. 154(7). G147–G147. 27 indexed citations
6.
Lopes, J. M. J., M. Roeckerath, T. Heeg, et al.. (2006). Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric. Applied Physics Letters. 89(22). 71 indexed citations
7.
Thomas, Reji, P. Ehrhart, M. Luysberg, et al.. (2006). Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition. Applied Physics Letters. 89(23). 39 indexed citations
8.
Gerber, Andreas, H. Kohlstedt, Rainer Waser, et al.. (2006). Low-voltage operation of metal-ferroelectric-insulator-semiconductor diodes incorporating a ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett film. Journal of Applied Physics. 100(2). 45 indexed citations
9.
Besmehn, Astrid, A. Schöll, E. Rije, & U. Breuer. (2005). Surface characterisation and interface studies of high-k materials by XPS and TOF-SIMS. Applied Surface Science. 252(1). 172–176. 11 indexed citations
10.
Zhao, Qing‐Tai, U. Breuer, E. Rije, St. Lenk, & S. Mantl. (2005). Tuning of NiSi∕Si Schottky barrier heights by sulfur segregation during Ni silicidation. Applied Physics Letters. 86(6). 114 indexed citations
11.
Zhao, Qing‐Tai, E. Rije, U. Breuer, St. Lenk, & S. Mantl. (2004). Tuning of silicide Schottky barrier heights by segregation of sulfur atoms. 456–459 vol.1. 11 indexed citations
12.
Zhao, Qing‐Tai, E. Rije, St. Lenk, H.L. Bay, & S. Mantl. (2004). Full silicidation process for making CoSi2 on SiO2. Applied Physics Letters. 84(17). 3292–3294. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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