J.W. Graff

527 citations

25 papers · 442 indexed · h-index 12

Co-authors: E. Fred Schubert Th. Gessmann A. Osinsky Jinn‐Kong Sheu K. Streubel Christian Karnutsch E. F. Schubert Leonid Chernyak
Topics: GaN-based semiconductor devices and materials (20 papers)Ga2O3 and related materials (9 papers)Semiconductor materials and devices (8 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters Journal of Applied Physics IEEE Transactions on Electron Devices
Partner nations: United States Taiwan Germany

In The Last Decade

J.W. Graff

23 papers receiving 428 citations

Peers

Countries citing papers authored by J.W. Graff

Since Specialization

Citations

This map shows the geographic impact of J.W. Graff's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.W. Graff with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.W. Graff more than expected).

Fields of papers citing papers by J.W. Graff

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.W. Graff. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.W. Graff. The network helps show where J.W. Graff may publish in the future.

Co-authorship network of co-authors of J.W. Graff

This figure shows the co-authorship network connecting the top 25 collaborators of J.W. Graff. A scholar is included among the top collaborators of J.W. Graff based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.W. Graff. J.W. Graff is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Modeling and Mass Production High Efficiency n-Type Solar Cells with Ion-Implanted Selective Back Surface Field 2015 ·EU PVSEC ·(unknown),Felix Lang,Wonyoung Yang,(unknown),Zhijuan Hu,Jian Xiong,Yachen Gao,Jiawei Yang,(unknown),J.W. Graff,Christopher E. Dubé,(unknown)	1
2	Counterdoping with patterned ion implantation 2013 ·Udo Römer,Robby Peibst,Tobias Ohrdes,Yevgeniya Larionova,Nils‐Peter Harder,Rolf Brendel,A. Grohe,D. Stichtenoth,(unknown),C. Schöllhorn,H.‐J. Krokoszinski,J.W. Graff	13
3	Light-emitting diodes with omni-directional reflectors 2003 ·Conference on Lasers and Electro-Optics ·Th. Gessmann,(unknown),J.W. Graff,E. Fred Schubert,K. Streubel,Jinn‐Kong Sheu	2
4	Ohmic contact technology in III-V nitrides using polarization effects in cap layers 2003 ·Th. Gessmann,J.W. Graff,(unknown),(unknown),E. Fred Schubert	1
5	GaInN light-emitting diodes with omnidirectional reflectors 2003 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Thomas Gessmann,Yun-Li Li,E. Fred Schubert,J.W. Graff,Jinn‐Kong Sheu	9
6	Experimental study of perpendicular transport in weakly coupled AlxGa1−xN/GaN superlattices 2003 ·Applied Physics Letters ·(unknown),(unknown),E. Fred Schubert,J.W. Graff,Jinn‐Kong Sheu	20
7	Photon recycling semiconductor light emitting diode 2003 ·(unknown),J.W. Graff,E. Fred Schubert	8
8	Ohmic contact technology in III nitrides using polarization effects of cap layers 2002 ·Journal of Applied Physics ·Th. Gessmann,J.W. Graff,(unknown),(unknown),E. Fred Schubert	31
9	Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1−xN capping layers 2002 ·Applied Physics Letters ·Th. Gessmann,(unknown),(unknown),J.W. Graff,E. Fred Schubert,Jinn‐Kong Sheu	52
10	Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1−xN capping layers 2002 ·Journal of Electronic Materials ·Th. Gessmann,(unknown),(unknown),J.W. Graff,E. Fred Schubert,Jinn‐Kong Sheu	5
11	Influence of electron injection on performance of GaN photodetectors 2002 ·Applied Physics Letters ·Leonid Chernyak,Alfons Schulte,A. Osinsky,J.W. Graff,E. Fred Schubert	17
12	GaN/SiC p-n mesa junctions for HBTs fabricatedusingselective photoelectrochemical etching 2001 ·Electronics Letters ·J.W. Graff,E. Fred Schubert,(unknown)	1
13	Improved Mobilities and Resistivities in Modulation-Doped P-type AlGaN / GaN Superlattices 2001 ·MRS Proceedings ·(unknown),J.W. Graff,E. Fred Schubert,A. M. Dabiran	1
14	Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices 2001 ·Applied Physics Letters ·(unknown),J.W. Graff,E. Fred Schubert	59
15	Minority electron transport anisotropy in p-type Al/sub x/Ga/sub 1-x/N/GaN superlattices 2001 ·IEEE Transactions on Electron Devices ·Leonid Chernyak,A. Osinsky,V. Fuflyigin,J.W. Graff,E. Fred Schubert	12
16	Novel Polarization Enhanced Ohmic Contacts to n-Type GaN 2001 ·physica status solidi (a) ·Yun-Li Li,J.W. Graff,(unknown),Th. Gessmann,E. Fred Schubert	2
17	Flat free-standing silicon diaphragms using silicon-on-insulator wafers 2000 ·Sensors and Actuators A Physical ·J.W. Graff,E. F. Schubert	8
18	Polarization effects in Al_xGa_1−xN / GaN superlattices 2000 ·MRS Proceedings ·(unknown),E. Fred Schubert,J.W. Graff,A. Osinsky,Michael J. Murphy,(unknown)	2
19	<title>Photon recycling semiconductor light-emitting diode</title> 2000 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown),J.W. Graff,E. Fred Schubert,R. F. Karlicek	18
20	Low-resistance ohmic contacts to p-type GaN 2000 ·Applied Physics Letters ·(unknown),E. Fred Schubert,J.W. Graff,A. Osinsky,(unknown)	79

About J.W. Graff

J.W. Graff is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 25 papers that have together received 442 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (20 papers), Ga2O3 and related materials (9 papers) and Semiconductor materials and devices (8 papers). The work is most often cited by research in Condensed Matter Physics (345 citations), Electronic, Optical and Magnetic Materials (157 citations) and Atomic and Molecular Physics, and Optics (167 citations). J.W. Graff has collaborated with scholars based in United States, Taiwan and Germany. Frequent co-authors include E. Fred Schubert, E. Fred Schubert, Th. Gessmann, A. Osinsky, Jinn‐Kong Sheu, K. Streubel, Christian Karnutsch, E. F. Schubert, Leonid Chernyak and V. Fuflyigin. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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