Daewon Kwon

448 total citations
23 papers, 368 citations indexed

About

Daewon Kwon is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Daewon Kwon has authored 23 papers receiving a total of 368 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Daewon Kwon's work include Thin-Film Transistor Technologies (11 papers), Silicon and Solar Cell Technologies (10 papers) and Silicon Nanostructures and Photoluminescence (8 papers). Daewon Kwon is often cited by papers focused on Thin-Film Transistor Technologies (11 papers), Silicon and Solar Cell Technologies (10 papers) and Silicon Nanostructures and Photoluminescence (8 papers). Daewon Kwon collaborates with scholars based in United States, Italy and South Korea. Daewon Kwon's co-authors include Steven A. Ringel, A. Hierro, E. D. Jones, Robert Kaplar, S. R. Kurtz, Andrew A. Allerman, J. David Cohen, Steven P. DenBaars, M. Hansen and James S. Speck and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Daewon Kwon

20 papers receiving 359 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Daewon Kwon United States 9 293 201 175 124 79 23 368
Wei-Hung Kuo Taiwan 10 253 0.9× 239 1.2× 72 0.4× 162 1.3× 135 1.7× 36 386
Rathnait Long United States 8 338 1.2× 151 0.8× 89 0.5× 130 1.0× 125 1.6× 11 376
Yumin Zhang China 10 171 0.6× 200 1.0× 68 0.4× 169 1.4× 110 1.4× 49 320
Quanbin Zhou China 12 224 0.8× 311 1.5× 79 0.5× 133 1.1× 157 2.0× 28 376
N. F. Kharchenko Ukraine 11 166 0.6× 114 0.6× 162 0.9× 116 0.9× 186 2.4× 64 344
Jordan R. Lang United States 9 273 0.9× 223 1.1× 218 1.2× 93 0.8× 98 1.2× 12 422
S. K. Chang South Korea 8 206 0.7× 62 0.3× 171 1.0× 245 2.0× 72 0.9× 30 342
J. C. Read United States 8 132 0.5× 85 0.4× 272 1.6× 179 1.4× 113 1.4× 10 368
H. C. Chiu Taiwan 11 518 1.8× 244 1.2× 120 0.7× 214 1.7× 231 2.9× 24 581
Naotaka Kuroda Japan 11 308 1.1× 196 1.0× 151 0.9× 82 0.7× 73 0.9× 31 422

Countries citing papers authored by Daewon Kwon

Since Specialization
Citations

This map shows the geographic impact of Daewon Kwon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daewon Kwon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daewon Kwon more than expected).

Fields of papers citing papers by Daewon Kwon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daewon Kwon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daewon Kwon. The network helps show where Daewon Kwon may publish in the future.

Co-authorship network of co-authors of Daewon Kwon

This figure shows the co-authorship network connecting the top 25 collaborators of Daewon Kwon. A scholar is included among the top collaborators of Daewon Kwon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daewon Kwon. Daewon Kwon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kang, Min-Sung, Jinsoo Joo, Daewon Kwon, et al.. (2025). Curved Nanographene–Graphite Hybrid Anodes with Sequential Li + Insertion for Fast‐Charging and Long‐Life Li‐Ion Batteries. Advanced Functional Materials. 36(12).
2.
Lee, Seung Min, Ah‐Young Lee, Jongbeom Kim, et al.. (2025). Multisite Coordination Ligand Strategy for FAPbBr3 Nanocrystal Light-Emitting Diodes. ACS Energy Letters. 10(3). 1411–1420. 2 indexed citations
3.
Kaplar, Robert, Daewon Kwon, Steven A. Ringel, et al.. (2001). Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells. Solar Energy Materials and Solar Cells. 69(1). 85–91. 58 indexed citations
4.
Hierro, A., Daewon Kwon, Steven A. Ringel, et al.. (2000). Photocapacitance study of bulk deep levels in ZnSe grown by molecular-beam epitaxy. Journal of Applied Physics. 87(2). 730–738. 26 indexed citations
5.
Hierro, A., Daewon Kwon, Steven A. Ringel, et al.. (2000). Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes. Applied Physics Letters. 76(21). 3064–3066. 121 indexed citations
6.
Hierro, A., Daewon Kwon, S. A. Ringel, et al.. (2000). Deep levels in n-type Schottky and p+-n homojunction GaN diodes. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 922–928.
7.
Cohen, J. David, et al.. (1999). Electronic Transitions in Mixed Phase Crystalline/Amorphous Silicon in the Low Crystalline Fraction Regime. MRS Proceedings. 557. 1 indexed citations
8.
Hierro, A., Daewon Kwon, S. H. Goss, et al.. (1999). Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy. Applied Physics Letters. 75(6). 832–834. 14 indexed citations
9.
Hierro, A., Daewon Kwon, S. A. Ringel, et al.. (1999). Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes. MRS Proceedings. 595. 1 indexed citations
10.
Kwon, Daewon, et al.. (1999). Electronic transitions associated with small crystalline silicon inclusions within an amorphous silicon host. Physical review. B, Condensed matter. 60(7). 4442–4445. 13 indexed citations
11.
Kwon, Daewon, Hao Lee, J. David Cohen, Michael H.‐C. Jin, & John R. Abelson. (1998). Optical spectra of crystalline silicon particles embedded in an amorphous silicon matrix. Journal of Non-Crystalline Solids. 227-230. 1040–1044. 8 indexed citations
12.
Hierro, A., Daewon Kwon, S. A. Ringel, et al.. (1998). Deep Level Characterization of Interface-Engineered ZnSe Layers Grown by Molecular Beam Epitaxy on GaAs. MRS Proceedings. 535. 1 indexed citations
13.
Cohen, J. David & Daewon Kwon. (1998). Identification of the dominant electron deep trap in amorphous silicon from ESR and modulated photocurrent measurements: implications for defect models. Journal of Non-Crystalline Solids. 227-230. 348–352. 11 indexed citations
14.
Kwon, Daewon, et al.. (1998). Electrode interdependence and hole capacitance in capacitance–voltage characteristics of hydrogenated amorphous silicon thin-film transistor. Journal of Applied Physics. 83(12). 8051–8056. 14 indexed citations
15.
16.
17.
Kwon, Daewon, et al.. (1996). New results using capacitance transient studies to investigate deep defect relaxation in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids. 198-200. 530–534. 1 indexed citations
18.
Sercel, Peter C., et al.. (1996). Visible electroluminescence from porous silicon/hydrogenated amorphous silicon pn-heterojunction devices. Applied Physics Letters. 68(5). 684–686. 3 indexed citations
19.
Kwon, Daewon, J. David Cohen, Brent P. Nelson, & E. Iwaniczko. (1995). Effect of Light Soaking on Hot Wire Deposited a-Si:H Films. MRS Proceedings. 377. 14 indexed citations
20.
Paschen, Uwe, Daewon Kwon, & J. David Cohen. (1994). Charge and Current Transient Measurements on N-Type Hydrogenated Amorphous Silicon in the Relaxation Regime. MRS Proceedings. 336. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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