David Wei Zhang

10.1k citations

281 papers · 8.2k indexed · 5 hit papers · h-index 45

Impact in

Electrical and Electronic Engineering top 0.5%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
Materials Chemistry top 1%
- 2D Materials and Applications
- MXene and MAX Phase Materials
- ZnO doping and properties
- Graphene research and applications

Papers in

Electrical and Electronic Engineering 229
- Semiconductor materials and devices 110
- Advanced Memory and Neural Computing 77
- Ferroelectric and Negative Capacitance Devices 76
- Advancements in Semiconductor Devices and Circuit Design 44
Materials Chemistry 138
- 2D Materials and Applications 48
- ZnO doping and properties 41
- MXene and MAX Phase Materials 38

Co-authors: Peng Zhou Qingqing Sun Shi‐Jin Ding Lin Chen Hao Zhu Hong-Liang Lü Tianyu Wang Huawei Chen
Journals: IEEE Electron Device Letters (30 papers)IEEE Transactions on Electron Devices (19 papers)Applied Physics Letters (14 papers)Nanoscale Research Letters (10 papers)AIP Advances (8 papers)
Partner nations: China Taiwan United States

In The Last Decade

David Wei Zhang

266 papers receiving 8.0k citations

Hit Papers

5 papers align trajectories log scale

Recent Progress on Flexible Room-Temperature Gas Sensors Based on Metal Oxide Semiconductor 2022 · 253 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2022 Nano-Micro Letters
2022 Nature Communications
2021 Nature Communications
2021 Nano Letters
2020 Nature Nanotechnology

Peers

Countries citing papers authored by David Wei Zhang

Since Specialization

Citations

This map shows the geographic impact of David Wei Zhang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by David Wei Zhang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites David Wei Zhang more than expected).

Fields of papers citing papers by David Wei Zhang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by David Wei Zhang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by David Wei Zhang. The network helps show where David Wei Zhang may publish in the future.

Co-authors

The 25 scholars most cited alongside David Wei Zhang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with David Wei Zhang Line = papers co-authored together David Wei Zhang links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Large positive VFB shift achieved by a band alignment modulated with insertion of Ga2O3 dipole layer Applied Physics Letters ·Xiaona Zhu, Lei Shen, Yu-Chun Li, Yu-Dong Lv, Cai-Yu Shi, Teng Huang, Zi-Ying Huang, David Wei Zhang, Hong-Liang Lü	2025	0
2	Effect of 5 MeV proton irradiation on electrical and trap characteristics of β-Ga2O3 power diode Materials Science in Semiconductor Processing ·Haolan Qu, Wei Huang, Yu Zhang, Jin Sui, Ge Yang, Jiaxiang Chen, David Wei Zhang, Yuangang Wang, Yuanjie Lv, Zhihong Feng, Xinbo Zou	2024	1
3	La-Doped HZO (La:HZO) Ferroelectric Devices Toward High-Temperature Application IEEE Transactions on Electron Devices ·Kangli Xu, Tianyu Wang, Yongkai Liu, Jiajie Yu, Yinchi Liu, Zhenhai Li, Jialin Meng, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen	2024	2
4	The Enhanced Polarization Switching Speed and Endurance in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers IEEE Electron Device Letters ·Yuchun Li, Xiaoxi Li, Zi-Ying Huang, Xiaona Zhu, David Wei Zhang, Hong-Liang Lü	2024	4
5	A Buried Thermal Rail (BTR) Technology to Improve Electrothermal Characteristics of Complementary Field-Effect Transistor (CFET) Micromachines ·Zhecheng Pan, Tao Liu, Jingwen Yang, Kun Chen, Saisheng Xu, Chunlei Wu, Min Xu, David Wei Zhang	2023	2
6	Impact Analysis of Off-State Avalanche-Breakdown Stress on 650 V-Class Superjunction MOSFET IEEE Transactions on Electron Devices ·Hang Xu, Yafen Yang, Jingjing Tan, Lin Chen, Ji Li, Hao Zhu, Qingqing Sun, David Wei Zhang	2023	1
7	Bandgap Tunable ZnGaO Thin Films Grown by Atomic Layer Deposition for High-Performance Ultraviolet Photodetection ACS Materials Letters ·Yu‐Chang Chen, Guang Zeng, Si-Tong Ding, Cai-Yu Shi, Xuefeng Zhao, David Wei Zhang, Hong-Liang Lü	2023	17
8	Flexible aluminum-doped hafnium oxide ferroelectric synapse devices for neuromorphic computing Materials Horizons ·Zhenhai Li, Tianyu Wang, Jialin Meng, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen	2023	19
9	Photonic Synapses for Image Recognition and High Density Integration of Simplified Artificial Neural Networks Advanced Electronic Materials ·Yuqing Fang, Qingxuan Li, Jialin Meng, Tianyu Wang, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen	2023	18
10	Investigation of a Macromolecular Additive on the Decrease of the Aluminum Horizontal Etching Rate in the Wet Etching Process Metals ·Jingxiu Ding, Ruipeng Zhang, Yuchun Li, David Wei Zhang, Hong-Liang Lü	2022	0
11	Photoelectric Logic and In Situ Memory Transistors with Stepped Floating Gates of Perovskite Quantum Dots ACS Nano ·Junxiang Pei, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi‐Jin Ding	2022	35
12	Li-Ion Doped Artificial Synaptic Memristor for Highly Linear Neuromorphic Computing IEEE Electron Device Letters ·Jialin Meng, Zhenhai Li, Yuqing Fang, Qingxuan Li, Zhenyu He, Tianyu Wang, Hao Zhu, Ji Li, Qingqing Sun, David Wei Zhang, Lin Chen	2022	17
13	Flexible boron nitride-based memristor forin situdigital and analogue neuromorphic computing applications Materials Horizons ·Jialin Meng, Tianyu Wang, Zhenyu He, Lin Chen, Hao Zhu, Ji Li, Qingqing Sun, Shi‐Jin Ding, Wenzhong Bao, Peng Zhou, David Wei Zhang	2021	110
14	Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning Nanoscale ·Tianyu Wang, Jialin Meng, Zhenyu He, Lin Chen, Hao Zhu, Qingqing Sun, Shi‐Jin Ding, Peng Zhou, David Wei Zhang	2020	40
15	Nonvolatile ferroelectric field-effect transistors Nature Communications ·Xiaojie Chai, Jun Jiang, Qinghua Zhang, Xu Hou, Fanqi Meng, Jie Wang, Lin Gu, David Wei Zhang, Anquan Jiang	2020	107
16	High-Performance Logic and Memory Devices Based on a Dual-Gated MoS₂ Architecture ACS Applied Electronic Materials ·Fuyou Liao, Zhongxun Guo, Yin Wang, Yufeng Xie, Simeng Zhang, Yaochen Sheng, Hongwei Tang, Zihan Xu, Antoine Riaud, Peng Zhou, Jing Wan, Michael S. Fuhrer, Xiangwei Jiang, David Wei Zhang, Yang Chai, Wenzhong Bao	2019	30
17	A Dual‐Gate MoS₂ Photodetector Based on Interface Coupling Effect Small ·Fuyou Liao, Jianan Deng, Xinyu Chen, Yin Wang, Xinzhi Zhang, Jian Liu, Hao Zhu, Lin Chen, Qingqing Sun, Weida Hu, Jianlu Wang, Jing Zhou, Peng Zhou, David Wei Zhang, Jing Wan, Wenzhong Bao	2019	72
18	Wafer-scale transferred multilayer MoS ₂ for high performance field effect transistors Nanotechnology ·Simeng Zhang, Hu Xu, Fuyou Liao, Yangye Sun, Kun Ba, Zhengzong Sun, Zhi‐Jun Qiu, Zihan Xu, Hao Zhu, Lin Chen, Qingqing Sun, Peng Zhou, Wenzhong Bao, David Wei Zhang	2019	42
19	Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing Nanoscale Research Letters ·Bao Zhu, Xiaohan Wu, Wen-Jun Liu, Shi‐Jin Ding, David Wei Zhang, Zhongyong Fan	2019	24
20	Progress of Large‐Scale Synthesis and Electronic Device Application of Two‐Dimensional Transition Metal Dichalcogenides Small ·Xiongfei Song, Zhongxun Guo, Qiaochu Zhang, Peng Zhou, Wenzhong Bao, David Wei Zhang	2017	67

About David Wei Zhang

David Wei Zhang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Polymers and Plastics and Condensed Matter Physics, having authored 281 papers that have together received 8.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (110 papers), Advanced Memory and Neural Computing (77 papers), Ferroelectric and Negative Capacitance Devices (76 papers), 2D Materials and Applications (48 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers), ZnO doping and properties (41 papers), MXene and MAX Phase Materials (38 papers) and Ga2O3 and related materials (34 papers). The work is most often cited by research in Electrical and Electronic Engineering (6.3k citations), Materials Chemistry (4.2k citations), Polymers and Plastics (869 citations), Electronic, Optical and Magnetic Materials (1.0k citations) and Cellular and Molecular Neuroscience (1.0k citations). David Wei Zhang has collaborated with scholars based in China, Taiwan and United States. Frequent co-authors include Peng Zhou, Qingqing Sun, Shi‐Jin Ding, Lin Chen, Hao Zhu, Hong-Liang Lü, Tianyu Wang, Huawei Chen, Shuiyuan Wang and Wenzhong Bao. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, Nanoscale Research Letters and AIP Advances.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact