Jeffrey J. Figiel

2.5k total citations
52 papers, 2.0k citations indexed

About

Jeffrey J. Figiel is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, Jeffrey J. Figiel has authored 52 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Condensed Matter Physics, 27 papers in Atomic and Molecular Physics, and Optics and 20 papers in Electrical and Electronic Engineering. Recurrent topics in Jeffrey J. Figiel's work include GaN-based semiconductor devices and materials (37 papers), Semiconductor Quantum Structures and Devices (23 papers) and Photonic and Optical Devices (14 papers). Jeffrey J. Figiel is often cited by papers focused on GaN-based semiconductor devices and materials (37 papers), Semiconductor Quantum Structures and Devices (23 papers) and Photonic and Optical Devices (14 papers). Jeffrey J. Figiel collaborates with scholars based in United States, United Kingdom and Japan. Jeffrey J. Figiel's co-authors include Jung Han, Mary H. Crawford, Sean Hearne, George T. Wang, Karen Elizabeth Waldrip, Hao Zhou, Kent D. Choquette, Richard Schneider, Eric Chason and Eleni Makarona and has published in prestigious journals such as Advanced Materials, Nano Letters and Applied Physics Letters.

In The Last Decade

Jeffrey J. Figiel

52 papers receiving 1.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jeffrey J. Figiel United States 25 1.4k 820 729 720 659 52 2.0k
A. Dussaigne France 28 1.4k 1.0× 643 0.8× 736 1.0× 627 0.9× 680 1.0× 74 1.8k
H. Marchand United States 17 1.6k 1.1× 798 1.0× 803 1.1× 818 1.1× 621 0.9× 37 1.9k
E. Iliopoulos Greece 27 1.5k 1.0× 622 0.8× 819 1.1× 823 1.1× 530 0.8× 86 1.9k
Tongjun Yu China 23 1.4k 1.0× 613 0.7× 938 1.3× 797 1.1× 462 0.7× 162 1.8k
Kazuyuki Tadatomo Japan 19 1.8k 1.3× 694 0.8× 944 1.3× 819 1.1× 641 1.0× 122 2.0k
A. Abare United States 21 2.0k 1.4× 641 0.8× 823 1.1× 790 1.1× 1.1k 1.7× 46 2.2k
J. Off Germany 18 1.4k 1.0× 412 0.5× 599 0.8× 611 0.8× 802 1.2× 55 1.6k
Michael D. Craven United States 22 2.0k 1.4× 633 0.8× 1.1k 1.5× 929 1.3× 722 1.1× 35 2.2k
R. Schlesser United States 28 1.7k 1.2× 834 1.0× 1.0k 1.4× 807 1.1× 356 0.5× 99 2.3k
Michael Iza United States 23 1.7k 1.2× 606 0.7× 741 1.0× 711 1.0× 759 1.2× 58 1.9k

Countries citing papers authored by Jeffrey J. Figiel

Since Specialization
Citations

This map shows the geographic impact of Jeffrey J. Figiel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jeffrey J. Figiel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jeffrey J. Figiel more than expected).

Fields of papers citing papers by Jeffrey J. Figiel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jeffrey J. Figiel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jeffrey J. Figiel. The network helps show where Jeffrey J. Figiel may publish in the future.

Co-authorship network of co-authors of Jeffrey J. Figiel

This figure shows the co-authorship network connecting the top 25 collaborators of Jeffrey J. Figiel. A scholar is included among the top collaborators of Jeffrey J. Figiel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jeffrey J. Figiel. Jeffrey J. Figiel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Creighton, J. R., Michael E. Coltrin, & Jeffrey J. Figiel. (2016). Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions. Journal of Crystal Growth. 464. 132–137. 3 indexed citations
2.
Li, Changyi, Sheng Liu, Ting S. Luk, et al.. (2016). Intrinsic polarization control in rectangular GaN nanowire lasers. Nanoscale. 8(10). 5682–5687. 27 indexed citations
3.
Liu, Sheng, Changyi Li, Jeffrey J. Figiel, et al.. (2015). Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure. Nanoscale. 7(21). 9581–9588. 17 indexed citations
4.
Wang, George T., Qiming Li, Jonathan J. Wierer, Daniel Koleske, & Jeffrey J. Figiel. (2014). Top–down fabrication and characterization of axial and radial III‐nitride nanowire LEDs. physica status solidi (a). 211(4). 748–751. 29 indexed citations
5.
Hurtado, Antonio, Jeremy B. Wright, Changyi Li, et al.. (2014). Polarization control in GaN nanowire lasers. Optics Express. 22(16). 19198–19198. 16 indexed citations
6.
Li, Qiming, et al.. (2009). Nanowire‐Templated Lateral Epitaxial Growth of Low‐Dislocation Density Nonpolar a‐Plane GaN on r‐Plane Sapphire. Advanced Materials. 21(23). 2416–2420. 45 indexed citations
7.
Fischer, A. J., Andrew A. Allerman, Mary H. Crawford, et al.. (2004). Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels. Applied Physics Letters. 84(17). 3394–3396. 138 indexed citations
8.
Koleske, Daniel, Michael E. Coltrin, Andrew A. Allerman, et al.. (2003). In situ measurements of GaN nucleation layer decompostion. Applied Physics Letters. 82(8). 1170–1172. 31 indexed citations
9.
Lear, K.L., Richard Schneider, Kent D. Choquette, et al.. (2002). Vertical-cavity surface-emitting-lasers with 21% efficiency by metalorganic vapor phase epitaxy. 181–182. 1 indexed citations
10.
Crawford, Mary H., Jung Han, Michael A. Banas, et al.. (2000). Optical Spectroscopy of Ingan Epilayers in the Low Indium Composition Regime. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 717–724. 1 indexed citations
11.
Han, Jung, Jeffrey J. Figiel, S. M. Myers, et al.. (1999). MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics. MRS Proceedings. 595. 1 indexed citations
12.
Han, Jung, Mary H. Crawford, R. J. Shul, et al.. (1999). Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 811–816. 9 indexed citations
13.
Amano, Hitoshi, Eric Chason, Jeffrey J. Figiel, et al.. (1998). GaN Stress Evolution During Metal-Organic Chemical Vapor Deposition. Applied Physics Letters. 1 indexed citations
14.
Han, Jung, Mary H. Crawford, R. J. Shul, et al.. (1998). AlGaN/GaN quantum well ultraviolet light emitting diodes. Applied Physics Letters. 73(12). 1688–1690. 191 indexed citations
15.
Amano, Hiroshi, Motoaki Iwaya, Takayuki Kashima, et al.. (1998). Stress and Defect Control in GaN Using Low Temperature Interlayers. Japanese Journal of Applied Physics. 37(12B). L1540–L1540. 138 indexed citations
16.
Schneider, Richard, Mary H. Crawford, Kent D. Choquette, et al.. (1995). Improved AlGaInP-based red (670–690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design. Applied Physics Letters. 67(3). 329–331. 7 indexed citations
17.
Choquette, Kent D., K.L. Lear, Richard Schneider, et al.. (1995). Fabrication and performance of selectively oxidized vertical-cavity lasers. IEEE Photonics Technology Letters. 7(11). 1237–1239. 78 indexed citations
18.
Crawford, Mary H., Richard Schneider, Kent D. Choquette, et al.. (1995). High efficiency AlGaInP-based 660–680 nm vertical-cavitysurfaceemitting lasers. Electronics Letters. 31(3). 196–198. 12 indexed citations
19.
Schneider, Richard, Kent D. Choquette, James A. Lott, et al.. (1994). Efficient room-temperature continuous-wave AlGaInP/AlGaAs visible (670 nm) vertical-cavity surface-emitting laser diodes. IEEE Photonics Technology Letters. 6(3). 313–316. 31 indexed citations
20.
Lear, K.L., Richard Schneider, Kent D. Choquette, et al.. (1994). Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxy. IEEE Photonics Technology Letters. 6(9). 1053–1055. 48 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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