Yuefei Cai

853 total citations
32 papers, 601 citations indexed

About

Yuefei Cai is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Yuefei Cai has authored 32 papers receiving a total of 601 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Condensed Matter Physics, 24 papers in Electrical and Electronic Engineering and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Yuefei Cai's work include GaN-based semiconductor devices and materials (27 papers), Semiconductor Quantum Structures and Devices (9 papers) and Ga2O3 and related materials (8 papers). Yuefei Cai is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Semiconductor Quantum Structures and Devices (9 papers) and Ga2O3 and related materials (8 papers). Yuefei Cai collaborates with scholars based in United Kingdom, Hong Kong and China. Yuefei Cai's co-authors include Kei May Lau, Chao Liu, Tao Wang, Jie Bai, Chenqi Zhu, Xinbo Zou, Feng Peng, Huaxing Jiang, Jun Ma and Zhaojun Liu and has published in prestigious journals such as Angewandte Chemie International Edition, ACS Nano and Applied Physics Letters.

In The Last Decade

Yuefei Cai

29 papers receiving 585 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yuefei Cai United Kingdom 13 420 323 216 179 137 32 601
Chiao‐Yun Chang Taiwan 13 213 0.5× 193 0.6× 213 1.0× 167 0.9× 172 1.3× 47 495
V. I. Gavrilenko United States 10 67 0.2× 155 0.5× 192 0.9× 194 1.1× 152 1.1× 18 479
M. Bataiev United States 7 227 0.5× 216 0.7× 127 0.6× 166 0.9× 104 0.8× 16 390
Marta Sawicka Poland 16 522 1.2× 243 0.8× 192 0.9× 229 1.3× 324 2.4× 50 632
Modestos Athanasiou United Kingdom 14 151 0.4× 211 0.7× 160 0.7× 96 0.5× 160 1.2× 27 386
Zhongming Zheng China 14 163 0.4× 279 0.9× 115 0.5× 63 0.4× 213 1.6× 35 454
Erlend Grytli Tveten Norway 9 303 0.7× 126 0.4× 126 0.6× 125 0.7× 411 3.0× 9 524
Tomáš Samuely Slovakia 13 198 0.5× 109 0.3× 251 1.2× 128 0.7× 162 1.2× 33 477
Y. Imanaka Japan 14 309 0.7× 241 0.7× 419 1.9× 315 1.8× 255 1.9× 86 820
Chih-Chiang Shen Taiwan 12 210 0.5× 517 1.6× 653 3.0× 129 0.7× 147 1.1× 16 955

Countries citing papers authored by Yuefei Cai

Since Specialization
Citations

This map shows the geographic impact of Yuefei Cai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yuefei Cai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yuefei Cai more than expected).

Fields of papers citing papers by Yuefei Cai

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yuefei Cai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yuefei Cai. The network helps show where Yuefei Cai may publish in the future.

Co-authorship network of co-authors of Yuefei Cai

This figure shows the co-authorship network connecting the top 25 collaborators of Yuefei Cai. A scholar is included among the top collaborators of Yuefei Cai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yuefei Cai. Yuefei Cai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Liu, Hongping, Ran Zhang, & Yuefei Cai. (2025). Monolithic integration of p-MOSFETs with micro-LEDs on the same GaN LED epi. Optics Letters. 50(9). 2954–2954.
2.
Cai, Yuefei, et al.. (2023). Integration of large-extinction-ratio resonators with grating couplers and waveguides on GaN-on-sapphire at O-band. Optics Express. 31(26). 42795–42795. 1 indexed citations
3.
Cai, Yuefei, et al.. (2021). Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation Bandwidth. ACS Applied Electronic Materials. 3(1). 445–450. 33 indexed citations
4.
Cai, Yuefei, et al.. (2020). Nonpolar (1120) GaN Metal–Semiconductor–Metal Photodetectors with Superior Performance on Silicon. ACS Applied Materials & Interfaces. 12(22). 25031–25036. 22 indexed citations
5.
Bai, Jie, Yuefei Cai, Feng Peng, et al.. (2020). Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width. ACS Nano. 14(6). 6906–6911. 50 indexed citations
6.
Bai, Jie, et al.. (2020). A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs). ACS Photonics. 7(2). 411–415. 53 indexed citations
7.
Huang, Ke, Jochen Bruckbauer, Chenqi Zhu, et al.. (2020). Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon. Scientific Reports. 10(1). 12650–12650. 8 indexed citations
8.
Jiang, Sheng, et al.. (2020). Exploring an Approach toward the Intrinsic Limits of GaN Electronics. ACS Applied Materials & Interfaces. 12(11). 12949–12954. 22 indexed citations
9.
Cai, Yuefei, et al.. (2020). High Modulation Bandwidth of Semipolar (11–22) InGaN/GaN LEDs with Long Wavelength Emission. ACS Applied Electronic Materials. 2(8). 2363–2368. 26 indexed citations
10.
Cai, Yuefei, et al.. (2019). Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method. Semiconductor Science and Technology. 34(4). 45012–45012. 4 indexed citations
11.
Chen, Yuncong, Zheng Zhao, Yuefei Cai, et al.. (2018). An Easily Accessible Ionic Aggregation‐Induced Emission Luminogen with Hydrogen‐Bonding‐Switchable Emission and Wash‐Free Imaging Ability. Angewandte Chemie International Edition. 57(18). 5011–5015. 83 indexed citations
12.
Cai, Yuefei, et al.. (2018). Controllable Uniform Green Light Emitters Enabled by Circular HEMT-LED Devices. IEEE photonics journal. 10(5). 1–7. 19 indexed citations
13.
Cai, Yuefei, et al.. (2018). Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers. Materials. 11(10). 1968–1968. 12 indexed citations
14.
Cai, Yuefei, Xinbo Zou, Chao Liu, & Kei May Lau. (2017). Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters. IEEE Electron Device Letters. 39(2). 224–227. 51 indexed citations
15.
16.
Cai, Yuefei, Xinbo Zou, Wing Cheung Chong, & Kei May Lau. (2016). Optimization of electrode structure for flip‐chip HVLED via two‐level metallization. physica status solidi (a). 213(5). 1199–1203. 7 indexed citations
17.
Liu, Chao, Yuefei Cai, Huaxing Jiang, & Kei May Lau. (2016). Optimization of a Common Buffer Platform for Monolithic Integration of InGaN/GaN Light-Emitting Diodes and AlGaN/GaN High-Electron-Mobility Transistors. Journal of Electronic Materials. 45(4). 2092–2101. 7 indexed citations
18.
Zou, Xinbo, Yuefei Cai, Wing Cheung Chong, & Kei May Lau. (2015). Fabrication and Characterization of High-Voltage LEDs Using Photoresist-Filled-Trench Technique. Journal of Display Technology. 12(4). 397–401. 7 indexed citations
19.
Liu, Chao, Yuefei Cai, Zhaojun Liu, Jun Ma, & Kei May Lau. (2015). Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 106(18). 54 indexed citations
20.
Cai, Yuefei, et al.. (2013). Systematic studies on the field enhancement effect of Hertzian microcracks. Acta Physica Sinica. 62(23). 234203–234203. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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