P. Chi

490 total citations
22 papers, 398 citations indexed

About

P. Chi is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, P. Chi has authored 22 papers receiving a total of 398 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 10 papers in Computational Mechanics and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in P. Chi's work include Ion-surface interactions and analysis (10 papers), Semiconductor materials and interfaces (8 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). P. Chi is often cited by papers focused on Ion-surface interactions and analysis (10 papers), Semiconductor materials and interfaces (8 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). P. Chi collaborates with scholars based in United States, Australia and South Korea. P. Chi's co-authors include David S. Simons, F. A. Stevie, Greg Gillen, Albert J. Fahey, L. Rubin, Jennifer R. Verkouteren, K. S. Jones, Mark E. Law, Chris A. Michaels and James D. Batteas and has published in prestigious journals such as Applied Physics Letters, Applied Surface Science and IEEE Transactions on Electron Devices.

In The Last Decade

P. Chi

21 papers receiving 380 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Chi United States 9 280 248 157 94 42 22 398
R. Shimizu Japan 10 160 0.6× 192 0.8× 96 0.6× 47 0.5× 83 2.0× 23 312
Steven M. Hues United States 10 114 0.4× 106 0.4× 78 0.5× 147 1.6× 90 2.1× 28 321
M. Koike Japan 9 293 1.0× 53 0.2× 145 0.9× 190 2.0× 31 0.7× 34 423
T. Bobek Germany 9 285 1.0× 370 1.5× 258 1.6× 88 0.9× 25 0.6× 15 427
D. V. Yurasov Russia 10 289 1.0× 56 0.2× 178 1.1× 230 2.4× 16 0.4× 71 378
S. C. McNevin United States 9 298 1.1× 106 0.4× 69 0.4× 76 0.8× 79 1.9× 18 346
J.D. Woodhouse United States 9 305 1.1× 114 0.5× 262 1.7× 177 1.9× 69 1.6× 24 456
Steven Dzioba Canada 12 188 0.7× 166 0.7× 116 0.7× 50 0.5× 124 3.0× 18 313
Tadatsugu Itoh Japan 12 351 1.3× 110 0.4× 157 1.0× 152 1.6× 30 0.7× 44 422
Fulin Xiong United States 10 191 0.7× 116 0.5× 287 1.8× 100 1.1× 186 4.4× 24 422

Countries citing papers authored by P. Chi

Since Specialization
Citations

This map shows the geographic impact of P. Chi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Chi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Chi more than expected).

Fields of papers citing papers by P. Chi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Chi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Chi. The network helps show where P. Chi may publish in the future.

Co-authorship network of co-authors of P. Chi

This figure shows the co-authorship network connecting the top 25 collaborators of P. Chi. A scholar is included among the top collaborators of P. Chi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Chi. P. Chi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Thompson, Philip E., Glenn G. Jernigan, David S. Simons, et al.. (2009). Phosphorus doping of silicon at substrate temperatures above 600°C. Thin Solid Films. 518(6). S270–S272. 1 indexed citations
3.
Fahey, Albert J., Greg Gillen, P. Chi, & Christine M. Mahoney. (2006). Performance of a C60+ ion source on a dynamic SIMS instrument. Applied Surface Science. 252(19). 7312–7314. 16 indexed citations
4.
Gillen, Greg, James D. Batteas, Chris A. Michaels, et al.. (2006). Depth profiling using C60+ SIMS—Deposition and topography development during bombardment of silicon. Applied Surface Science. 252(19). 6521–6525. 72 indexed citations
5.
Simons, David S., et al.. (2005). Quantitative Measurement of Arsenic Implant Dose by SIMS. Surface and Interface Analysis. 12(2). 157–160. 1 indexed citations
6.
Moon, Dae Won, et al.. (2005). Development of B‐doped Si multiple delta‐layer reference materials for SIMS profiling. Surface and Interface Analysis. 37(10). 802–808. 8 indexed citations
7.
Chi, P. & Greg Gillen. (2004). Positive secondary ion yield enhancement of metal elements using trichlorotrifluoroethane and tetrachloroethene backfilling. Applied Surface Science. 231-232. 127–130. 3 indexed citations
8.
Gillen, Greg, Christine M. Mahoney, Robert A. Fletcher, et al.. (2004). Automated analysis of organic particles using cluster SIMS. Applied Surface Science. 231-232. 186–190. 8 indexed citations
9.
Jones, K. S., Mark E. Law, David S. Simons, et al.. (2002). The effect of end of range loops on transient enhanced diffusion in Si. 618–621. 1 indexed citations
10.
Rao, Mulpuri V., et al.. (2000). Acceptor ion-implantation in SiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 166-167. 395–398. 1 indexed citations
11.
Tucker, Jesse B., Mulpuri V. Rao, O. W. Holland, et al.. (2000). Material and n–p junction characteristics of As- and Sb-implanted SiC. Diamond and Related Materials. 9(11). 1887–1896. 5 indexed citations
12.
Law, Mark E., et al.. (1999). Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon. Applied Physics Letters. 75(24). 3844–3846. 13 indexed citations
13.
Law, Mark E., K. S. Jones, P. Kringhøj, et al.. (1997). The effect of dose rate on interstitial release from the end-of-range implant damage region in silicon. Applied Physics Letters. 71(21). 3105–3107. 15 indexed citations
14.
Jones, K. S., V. Krishnamoorthy, Mark E. Law, et al.. (1996). Diffusion of ion implanted boron in preamorphized silicon. Applied Physics Letters. 68(19). 2672–2674. 44 indexed citations
15.
Wickenden, A. E., D. Kurt Gaskill, Daniel Koleske, et al.. (1995). On Compensation and Impurities in State-of-the-Art GaN Epilayers Grown on Sapphire. MRS Proceedings. 395. 21 indexed citations
16.
Rao, Mulpuri V., Peter R. Griffiths, O. W. Holland, et al.. (1995). PN junction formation in 6HSiC by acceptor implantation into n-type substrate. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 106(1-4). 333–338. 2 indexed citations
17.
Williams, D. B., et al.. (1993). Compositional Changes in Aluminum-Lithium-Base Alloys Caused by Oxidation. Metallurgical Transactions A. 24(10). 2279–2288. 6 indexed citations
18.
19.
Molnár, Bálint, P. Chi, & David S. Simons. (1992). Silicon cross doping and its effect on the Si or Be implantation doping of gallium arsenide grown on (100) silicon by metalorganic chemical vapor deposition. Journal of materials research/Pratt's guide to venture capital sources. 7(8). 2186–2193. 3 indexed citations
20.
Stevie, F. A., et al.. (1988). Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(1). 76–80. 132 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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