D.B. Slater

446 total citations
23 papers, 349 citations indexed

About

D.B. Slater is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, D.B. Slater has authored 23 papers receiving a total of 349 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 4 papers in Condensed Matter Physics. Recurrent topics in D.B. Slater's work include Semiconductor materials and devices (11 papers), Radio Frequency Integrated Circuit Design (9 papers) and Semiconductor Quantum Structures and Devices (9 papers). D.B. Slater is often cited by papers focused on Semiconductor materials and devices (11 papers), Radio Frequency Integrated Circuit Design (9 papers) and Semiconductor Quantum Structures and Devices (9 papers). D.B. Slater collaborates with scholars based in United States, China and United Kingdom. D.B. Slater's co-authors include P.M. Enquist, John W. Palmour, J.A. Hutchby, Lori A. Lipkin, Arthur S. Morris, R.J. Trew, Jayesh Bharathan, A. Abare, K. W. Haberern and J. P. Ibbetson and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and Journal of Crystal Growth.

In The Last Decade

D.B. Slater

22 papers receiving 341 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D.B. Slater United States	11	261	146	135	60	55	23	349
R. Oberhuber Germany	5	279 1.1×	93 0.6×	105 0.8×	60 1.0×	66 1.2×	11	362
L. Witkowski United States	11	371 1.4×	203 1.4×	165 1.2×	71 1.2×	52 0.9×	28	427
S. Murad United Kingdom	11	276 1.1×	179 1.2×	123 0.9×	50 0.8×	37 0.7×	34	352
Won-Jin Choi United States	9	261 1.0×	170 1.2×	136 1.0×	72 1.2×	48 0.9×	39	349
H.F.F. Jos Netherlands	9	374 1.4×	155 1.1×	126 0.9×	75 1.3×	53 1.0×	35	429
Masaaki Tomizawa Japan	10	307 1.2×	196 1.3×	96 0.7×	48 0.8×	62 1.1×	27	389
K.L. Wang United States	10	265 1.0×	156 1.1×	121 0.9×	146 2.4×	51 0.9×	25	407
Manabu Arai Japan	11	282 1.1×	68 0.5×	85 0.6×	45 0.8×	38 0.7×	35	312
T. G. Yugova Russia	10	207 0.8×	135 0.9×	120 0.9×	159 2.6×	72 1.3×	46	303
C. Garetto Italy	4	287 1.1×	168 1.2×	413 3.1×	96 1.6×	141 2.6×	5	458

Countries citing papers authored by D.B. Slater

Since Specialization

Citations

This map shows the geographic impact of D.B. Slater's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.B. Slater with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.B. Slater more than expected).

Fields of papers citing papers by D.B. Slater

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.B. Slater. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.B. Slater. The network helps show where D.B. Slater may publish in the future.

Co-authorship network of co-authors of D.B. Slater

This figure shows the co-authorship network connecting the top 25 collaborators of D.B. Slater. A scholar is included among the top collaborators of D.B. Slater based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D.B. Slater. D.B. Slater is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Edmond, J. A., A. Abare, Jayesh Bharathan, et al.. (2004). High efficiency GaN-based LEDs and lasers on SiC. Journal of Crystal Growth. 272(1-4). 242–250. 117 indexed citations

Slater, D.B., et al.. (2002). Demonstration of a 6H-SiC CMOS technology. 162–163. 21 indexed citations

Slater, D.B., et al.. (2002). High temperature enhancement-mode NMOS and PMOS devices and circuits in 6H-SiC. 1. 100–101. 17 indexed citations

Slater, D.B., P.M. Enquist, J.A. Hutchby, Arthur S. Morris, & R.J. Trew. (2002). Harmonic cancellation in monolithic AlGaAs/GaAs Npn/Pnp HBT push-pull pairs. 305–314.

Lovejoy, M. L., Gary A. Patrizi, P.M. Enquist, et al.. (2002). Low-power, high-speed InGaAs/InP photoreceiver for highly-parallel optical data links. 181–184. 3 indexed citations

Kong, Hoyoul, J. A. Edmond, K. Doverspike, et al.. (2000). Pendeoepitaxy of GaN and InGaN LEDs on SiC. Materials science forum. 338-342. 1477–1482. 4 indexed citations

Lipkin, Lori A., D.B. Slater, & John W. Palmour. (1998). Low Interface State Density Oxides on P-Type SiC. Materials science forum. 264-268. 853–856. 19 indexed citations

Edmond, J. A., G. E. Bulman, Hoyoul Kong, et al.. (1998). Nitride-Based Emitters on SiC Substrates. Materials science forum. 264-268. 1421–1424. 3 indexed citations

Palmour, John W., Lori A. Lipkin, Ranbir Singh, et al.. (1997). SiC device technology: remaining issues. Diamond and Related Materials. 6(10). 1400–1404. 22 indexed citations

10.

Slater, D.B., P.M. Enquist, J.A. Hutchby, Arthur S. Morris, & R.J. Trew. (1994). Pnp HBT with 66 GHz f/sub max/. IEEE Electron Device Letters. 15(3). 91–93. 22 indexed citations

11.

Enquist, P.M., D.B. Slater, J.A. Hutchby, Arthur S. Morris, & R.J. Trew. (1993). Self-aligned AlGaAs/GaAs HBT with selectively regrown OMVPE emitter. IEEE Electron Device Letters. 14(6). 295–297. 8 indexed citations

12.

Slater, D.B., P.M. Enquist, J.A. Hutchby, et al.. (1993). Monolithically integrated SQW laser and HBT laser driver via selective OMVPE regrowth. IEEE Photonics Technology Letters. 5(7). 791–794. 3 indexed citations

13.

Enquist, P.M., D.B. Slater, S. M. Vernon, et al.. (1992). High speed non-selfaligned InP/InGaAs Npn heterojunction bipolar transistor grown by low pressure metal organic vapour phase epitaxy. Electronics Letters. 28(9). 832–833. 2 indexed citations

14.

Enquist, P.M., D.B. Slater, & Jacobus W. Swart. (1992). Complementary AlGaAs/GaAs HBT I/sup 2/L (CHI/sup 2/L) technology. IEEE Electron Device Letters. 13(4). 180–182. 12 indexed citations

15.

Slater, D.B., et al.. (1992). Phase matched AlGaAs/GaAs complementary HBTs for push-pull operation. Electronics Letters. 28(17). 1615–1616. 2 indexed citations

16.

Slater, D.B., et al.. (1991). Millimeter-wave AlGaAs/GaAs p-n-p HBT. IEEE Electron Device Letters. 12(7). 382–384. 9 indexed citations

17.

Slater, D.B., et al.. (1990). Monolithic integration of complementary HBTs by selective MOVPE. IEEE Electron Device Letters. 11(4). 146–148. 22 indexed citations

18.

Slater, D.B., et al.. (1990). Demonstration of a monolithic npn and pnp complementary HBT technology. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1288. 90–90. 12 indexed citations

19.

Enquist, P.M., et al.. (1989). Very high gain AlGaAs/GaAs pnp heterojunction bipolar transistor. Electronics Letters. 25(16). 1047–1048. 6 indexed citations

20.

Slater, D.B. & J.J. Paulos. (1988). Fabrication of High Quality Capacitors by Impurity Enhanced Oxidation. Journal of The Electrochemical Society. 135(12). 3098–3103. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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