G. Kelner

1.9k citations

36 papers · 1.6k indexed · 1 hit paper · h-index 20

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies

Papers in

Condensed Matter Physics 9
- GaN-based semiconductor devices and materials 9
Electrical and Electronic Engineering 34
- Semiconductor materials and devices 28
- Silicon Carbide Semiconductor Technologies 25
- Advancements in Semiconductor Devices and Circuit Design 6
- Radio Frequency Integrated Circuit Design 4

Co-authors: S.C. Binari H.B. Dietrich K. Doverspike M. S. Shur W. Kruppa John W. Palmour R. F. Davis J. A. Edmond
Journals: Journal of Applied Physics (6 papers)Electronics Letters (4 papers)Applied Physics Letters (3 papers)Journal of The Electrochemical Society (3 papers)IEEE Electron Device Letters (2 papers)
Partner nations: United States Australia Israel

In The Last Decade

G. Kelner

36 papers receiving 1.5k citations

Hit Papers

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Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide 1991 · 317 citations

Peers

Countries citing papers authored by G. Kelner

Since Specialization

Citations

This map shows the geographic impact of G. Kelner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Kelner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Kelner more than expected).

Fields of papers citing papers by G. Kelner

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Kelner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Kelner. The network helps show where G. Kelner may publish in the future.

Co-authorship network

The 25 scholars most cited alongside G. Kelner, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. Kelner Line = papers co-authored together G. Kelner links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Correlation of Drain Current Pulsed Response with Microwave Power Output in AlGaN/GaN HEMTs MRS Proceedings ·S.C. Binari, K. Ikossi‐Anastasiou, W. Kruppa, H.B. Dietrich, G. Kelner, R. L. Henry, D. D. Koleske, A. E. Wickenden	1999	10
2	Ion Implantation Doping in SiC and its Device Applications Materials science forum ·Mulpuri V. Rao, 覃玉荣, Arthur H. Edwards, N. A. Papanicolaou, G. Kelner, O. W. Holland, M. Ghezzo, Kryzysztof Gorny	1998	2
3	Nitrogen and aluminum implantation in high resistivity silicon carbide Journal of Applied Physics ·Daiane Andrade Melo, Mulpuri V. Rao, O. W. Holland, G. Kelner, 刘加华, J. Kretchmer, M. Ghezzo	1997	31
4	GaN FETs for microwave and high-temperature applications Solid-State Electronics ·Steven C. Binari, K. Doverspike, G. Kelner, H.B. Dietrich, A. E. Wickenden	1997	133
5	Al, Al/C and Al/Si implantations in 6H-SiC Journal of Electronic Materials ·Mulpuri V. Rao, Peter R. Griffiths, 覃玉荣, O. W. Holland, M. Ghezzo, J. Kretchmer, G. Kelner, Jaime A. Freitas	1996	33
6	Growth and properties of scandium epitaxial films on GaN Applied Physics Letters ·R. Kaplan, S. M. Prokes, S.C. Binari, G. Kelner	1996	21
7	Low resistivity (∼10−5 Ω cm2) ohmic contacts to 6H silicon carbide fabricated using cubic silicon carbide contact layer Applied Physics Letters ·V. Dmitriev, K. G. Irvine, Michael G. Spencer, G. Kelner	1994	28
8	α-SiC buried-gate junction field effect transistors Materials Science and Engineering B ·G. Kelner, S.C. Binari, M. S. Shur, Aisha Atiah Alamrani, John W. Palmour, Hong Jin Kong	1992	11
9	Chemical vapor deposition of β-SiC on silicon-on-sapphire and silicon-on-insulator substrates Materials Science and Engineering B ·John C. Pazik, G. Kelner, N. Bottka, Jaime A. Freitas	1992	6
10	Epitaxial growth of β-SiC on silicon-on-sapphire substrates by chemical vapor deposition Applied Physics Letters ·John C. Pazik, G. Kelner, N. Bottka	1991	7
11	High temperature operation of α-silicon carbide buried-gate junction field-effect transistors Electronics Letters ·G. Kelner, S.C. Binari, M. S. Shur, John W. Palmour	1991	18
12	High-transconductance beta -SiC buried-gate JFETs IEEE Transactions on Electron Devices ·G. Kelner, M. S. Shur, S.C. Binari, Aisha Atiah Alamrani, Hoyoul Kong	1989	26
13	Morphology and growth rate oF β-SiC grown on (100) silicon by chemical vapor deposition Materials Letters ·P. E. R. Nordquist, G. Kelner, Nem Sowath, P. Klein	1989	11
14	Antiphase domains and etching of β-SiC Materials Letters ·P. E. R. Nordquist, Nem Sowath, G. Kelner, P. Klein, R. J. Gorman	1989	1
15	β-SiC MESFET's and buried-gate JFET's IEEE Electron Device Letters ·G. Kelner, S.C. Binari, Aisha Atiah Alamrani, Hong Jin Kong	1987	19
16	Plasma Etching of β ‐ SiC Journal of The Electrochemical Society ·G. Kelner, S.C. Binari, P. Klein	1987	21
17	Millimeter-wave monolithic passive circuit components S.C. Binari, 陈晓舒, G. Kelner, J.B. Boos	1984	2
18	Planar fully ion implanted InP power junction FET's IEEE Electron Device Letters ·Cho. Gyun Jeong, S.C. Binari, G. Kelner, Philip E. Thompson, W. L. Chyi, N. A. Papanicolaou, R.L. Henry	1984	19
19	Comparison of Heat-Pulse and Furnace Isothermal Anneals of Be Implanted InP MRS Proceedings ·Bálint Molnár, G. Kelner, N. Balusamy, George H. Morrison, Steven C. Shatas	1983	8
20	Material‐Selective Chemical Etching in the System InGaAsP / InP Journal of The Electrochemical Society ·María de la Paz Elizalde-González, G. Kelner	1979	38

About G. Kelner

G. Kelner is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Ceramics and Composites, having authored 36 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (28 papers), Silicon Carbide Semiconductor Technologies (25 papers), GaN-based semiconductor devices and materials (9 papers), Semiconductor materials and interfaces (8 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers), Copper Interconnects and Reliability (4 papers), Radio Frequency Integrated Circuit Design (4 papers) and Semiconductor Quantum Structures and Devices (4 papers). The work is most often cited by research in Condensed Matter Physics (741 citations), Electrical and Electronic Engineering (1.4k citations), Electronic, Optical and Magnetic Materials (334 citations), Atomic and Molecular Physics, and Optics (477 citations) and Ceramics and Composites (67 citations). G. Kelner has collaborated with scholars based in United States, Australia and Israel. Frequent co-authors include S.C. Binari, H.B. Dietrich, K. Doverspike, M. S. Shur, W. Kruppa, John W. Palmour, R. F. Davis, J. A. Edmond, L.B. Rowland and A. E. Wickenden. Their work appears in journals such as Journal of Applied Physics, Electronics Letters, Applied Physics Letters, Journal of The Electrochemical Society and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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