Hisashi Seki

2.6k total citations
117 papers, 2.1k citations indexed

About

Hisashi Seki is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electrical and Electronic Engineering. According to data from OpenAlex, Hisashi Seki has authored 117 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 74 papers in Atomic and Molecular Physics, and Optics, 59 papers in Condensed Matter Physics and 58 papers in Electrical and Electronic Engineering. Recurrent topics in Hisashi Seki's work include Semiconductor Quantum Structures and Devices (63 papers), GaN-based semiconductor devices and materials (41 papers) and Semiconductor materials and devices (26 papers). Hisashi Seki is often cited by papers focused on Semiconductor Quantum Structures and Devices (63 papers), GaN-based semiconductor devices and materials (41 papers) and Semiconductor materials and devices (26 papers). Hisashi Seki collaborates with scholars based in Japan, Russia and Germany. Hisashi Seki's co-authors include Akinori Koukitu, Naoyuki Takahashi, Yoshinao Kumagai, Tetsuya Taki, Kikurou Takemoto, Kensaku Motoki, Takuji Okahisa, Hitoshi Kasai, Naoki Matsumoto and Seiji Nakahata and has published in prestigious journals such as Journal of Applied Physics, Proceedings of the IEEE and Journal of Materials Science.

In The Last Decade

Hisashi Seki

114 papers receiving 2.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hisashi Seki Japan 23 1.4k 1.0k 934 794 713 117 2.1k
Xu‐Qiang Shen Japan 23 1.1k 0.8× 537 0.5× 539 0.6× 668 0.8× 614 0.9× 98 1.6k
H. Fujimori Japan 21 479 0.3× 1.2k 1.1× 300 0.3× 606 0.8× 1.1k 1.6× 122 1.9k
Tsvetanka Zheleva United States 25 2.0k 1.4× 669 0.7× 1.2k 1.3× 1.4k 1.8× 1.0k 1.4× 73 2.9k
B. Łucznik Poland 26 2.0k 1.4× 539 0.5× 949 1.0× 1.0k 1.3× 1.0k 1.4× 114 2.3k
R. Schad United States 22 400 0.3× 1.0k 1.0× 638 0.7× 419 0.5× 707 1.0× 92 1.6k
E. J. Thrush United Kingdom 21 989 0.7× 712 0.7× 709 0.8× 478 0.6× 392 0.5× 69 1.4k
Stefan Degroote Belgium 25 1.3k 1.0× 693 0.7× 1.3k 1.4× 524 0.7× 771 1.1× 89 2.0k
E. J. Tarsa United States 17 1.8k 1.3× 582 0.6× 980 1.0× 1.2k 1.5× 1.1k 1.5× 31 2.4k
T.S. Cheng United Kingdom 25 1.5k 1.1× 952 0.9× 872 0.9× 887 1.1× 642 0.9× 124 2.2k
R. Beresford United States 24 834 0.6× 932 0.9× 1.4k 1.5× 871 1.1× 420 0.6× 78 2.3k

Countries citing papers authored by Hisashi Seki

Since Specialization
Citations

This map shows the geographic impact of Hisashi Seki's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hisashi Seki with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hisashi Seki more than expected).

Fields of papers citing papers by Hisashi Seki

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hisashi Seki. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hisashi Seki. The network helps show where Hisashi Seki may publish in the future.

Co-authorship network of co-authors of Hisashi Seki

This figure shows the co-authorship network connecting the top 25 collaborators of Hisashi Seki. A scholar is included among the top collaborators of Hisashi Seki based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hisashi Seki. Hisashi Seki is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Seki, Hisashi, et al.. (2012). Attitude Sensing System Using Photodetectors. 1683. 1022. 7 indexed citations
2.
Takahashi, N., Akinori Koukitu, & Hisashi Seki. (2000). Growth and characterization of YBa2Cu3Ox and NdBa2Cu3Ox superconducting thin films by mist microwave-plasma chemical vapor deposition using a CeO2 buffer layer. Journal of Materials Science. 35(5). 1231–1238. 3 indexed citations
3.
Koukitu, Akinori, et al.. (2000). Investigation of Hydrogen Chemisorption on GaAs (111)A Ga Surface by In Situ Monitoring and Ab Initio Calculation. Japanese Journal of Applied Physics. 39(11R). 6174–6174. 1 indexed citations
4.
Takahashi, Naoyuki, et al.. (1997). Growth of NdBaCuO Superconducting Thin Films Using Mist Microwave-Plasma Chemical Vapor Deposition with Dual Sources. Japanese Journal of Applied Physics. 36(5A). L553–L553. 6 indexed citations
5.
Koukitu, Akinori, Naoyuki Takahashi, & Hisashi Seki. (1997). Thermodynamic Study on Metalorganic Vapor-Phase Epitaxial Growth of Group III Nitrides. Japanese Journal of Applied Physics. 36(9A). L1136–L1136. 71 indexed citations
6.
Koukitu, Akinori, Tetsuya Taki, Naoyuki Takahashi, & Hisashi Seki. (1996). In Situ Monitoring of the Chemisorption of Hydrogen Atoms on (001) GaAs Surface in GaAs Atomic Layer Epitaxy. Japanese Journal of Applied Physics. 35(6A). L710–L710. 3 indexed citations
7.
Koukitu, Akinori, Naoyuki Takahashi, Tetsuya Taki, & Hisashi Seki. (1996). Thermodynamic Analysis of InxGa1-xN Alloy Composition Grown by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics. 35(6A). L673–L673. 83 indexed citations
8.
Koukitu, Akinori, Naoyuki Takahashi, Yoshiki Miura, & Hisashi Seki. (1995). In situ gravimetric monitoring of arsenic desorption in GaAs atomic layer epitaxy. Journal of Crystal Growth. 146(1-4). 239–245. 8 indexed citations
9.
Takahashi, Naoyuki, Akinori Koukitu, & Hisashi Seki. (1994). Preparation of Tl-System Superconducting Thin Films by the Mist Microwave-Plasma Chemical Vapor Deposition Method. Japanese Journal of Applied Physics. 33(12R). 6518–6518. 7 indexed citations
10.
Koukitu, Akinori, Fumio Hasegawa, & Hisashi Seki. (1988). Thermodynamic Analysis on Vapor Phase Epitaxy of GaAs by GaCl3 and AsH3 System. Japanese Journal of Applied Physics. 27(9A). L1594–L1594. 7 indexed citations
11.
Suzuki, Takeyuki, et al.. (1988). Superconducting transition temperature in the (YBa2Cu3O7-?)1-x (MeO) x system (MeO=PbO, SrO, ZnO, Bi2O3, SnO2, TeO2, V2O5, WO3 and MoO3). Journal of Materials Science Letters. 7(9). 926–927. 14 indexed citations
12.
Koukitu, Akinori, et al.. (1988). Solid Composition of In1-xGaxAs Grown by the Halogen Transport Atomic Layer Epitaxy. Japanese Journal of Applied Physics. 27(5A). L744–L744. 13 indexed citations
13.
Seki, Hisashi & Akinori Koukitu. (1986). Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductors. Journal of Crystal Growth. 74(1). 172–180. 88 indexed citations
14.
Koukitu, Akinori & Hisashi Seki. (1986). Thermodynamic analysis of the MOVPE growth of quaternary III–V alloy semiconductors. Journal of Crystal Growth. 76(2). 233–242. 30 indexed citations
15.
Seki, Hisashi & Akinori Koukitu. (1979). Thermodynamic Calculation for the Quaternary Alloy Composition of Vapor-Grown In1-xGaxAsyP1-y. Japanese Journal of Applied Physics. 18(8). 1649–1650. 7 indexed citations
16.
Koukitu, Akinori, Hisashi Seki, & Masatomo Fujimoto. (1976). Vapour Growth of GaAs by H2Introduction into an Inert Carrier Gas Stream. Japanese Journal of Applied Physics. 15(8). 1591–1592. 11 indexed citations
17.
Seki, Hisashi, et al.. (1975). Direct Observation of the Crust Formation in the Ga-AsCl3-H2and Ga-PCl3-H2Systems. Japanese Journal of Applied Physics. 14(3). 411–412. 3 indexed citations
18.
Seki, Hisashi & S. Minagawa. (1972). Equilibrium Computation for the Vapor Growth of InxGa1-xP Crystals. Japanese Journal of Applied Physics. 11(6). 850–854. 19 indexed citations
19.
Seki, Hisashi, et al.. (1967). Thermodynamic Study of the Growth Rate of Epitaxial GaAs by GaAs/AsCl3/H2 System. Japanese Journal of Applied Physics. 6(6). 785–785. 6 indexed citations
20.
Seki, Hisashi, et al.. (1967). Vapor Deposition of Silicon Nitride on GaAs by SiCl4-NH3-N2 System. Japanese Journal of Applied Physics. 6(11). 1345–1345. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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