Allen R. Hefner
About
In The Last Decade
Allen R. Hefner
140 papers receiving 4.5k citations
Peers
Comparison fields: 5 of 66
- Electrical and Electronic Engineering 4.7k
- Mechanical Engineering 835
- Control and Systems Engineering 326
- Atomic and Molecular Physics, and Optics 278
- Biomedical Engineering 200
Countries citing papers authored by Allen R. Hefner
This map shows the geographic impact of Allen R. Hefner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Allen R. Hefner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Allen R. Hefner more than expected).
Fields of papers citing papers by Allen R. Hefner
This network shows the impact of papers produced by Allen R. Hefner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Allen R. Hefner. The network helps show where Allen R. Hefner may publish in the future.
Co-authorship network of co-authors of Allen R. Hefner
This figure shows the co-authorship network connecting the top 25 collaborators of Allen R. Hefner. A scholar is included among the top collaborators of Allen R. Hefner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Allen R. Hefner. Allen R. Hefner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | State-of-the-art of HF Soft Magnetics and HV/UHV Silicon Carbide Semiconductors | 5 |
| 2 | 10 | |
| 3 | 10 | |
| 4 | 10 kV, 5A 4H-SiC Power DMOSFET | 1 |
| 5 | 50 | |
| 6 | 10 kV, 123 m {Ω}-cm2 4H-SiC Power DMOSFETs | 2 |
| 7 | 12 | |
| 8 | 18 | |
| 9 | High-Power 4H-SiC JBS Rectifiers | NIST | 0 |
| 10 | 6 | |
| 11 | 26 | |
| 12 | 22 | |
| 13 | Characteristics and Utilization of a New Class of Low On-Resistance MOS-Gated Power Device | NIST | 18 |
| 14 | 129 | |
| 15 | Thermal Component Models for Electrothermal Network Simulation | 63 |
| 16 | 171 | |
| 17 | Modeling Buffer Layer IGBT's for Circuit Simulation | NIST | 1 |
| 18 | A Dynamic Electro-Thermal Model for the IGBT | NIST | 1 |
| 19 | Semiconductor Measurement Technology: INSTANT - IGBT Network Simulation and Transient ANalysis Tool | 18 |
| 20 | 204 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.