S. N. Yurkov

793 total citations
42 papers, 689 citations indexed

About

S. N. Yurkov is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, S. N. Yurkov has authored 42 papers receiving a total of 689 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 7 papers in Condensed Matter Physics. Recurrent topics in S. N. Yurkov's work include Silicon Carbide Semiconductor Technologies (33 papers), Semiconductor materials and interfaces (13 papers) and Silicon and Solar Cell Technologies (11 papers). S. N. Yurkov is often cited by papers focused on Silicon Carbide Semiconductor Technologies (33 papers), Semiconductor materials and interfaces (13 papers) and Silicon and Solar Cell Technologies (11 papers). S. N. Yurkov collaborates with scholars based in Russia, United States and China. S. N. Yurkov's co-authors include T. T. Mnatsakanov, M. E. Levinshteĭn, L. I. Pomortseva, John W. Palmour, M. Asif Khan, G. Simin, Ranbir Singh, S. L. Rumyantsev, Pavel A. Ivanov and Anant Agarwal and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Electronics Letters.

In The Last Decade

S. N. Yurkov

38 papers receiving 634 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. N. Yurkov Russia	12	568	257	222	107	85	42	689
H. Takahashi Japan	14	413 0.7×	183 0.7×	195 0.9×	109 1.0×	100 1.2×	55	520
B. Utz Germany	11	315 0.6×	126 0.5×	395 1.8×	152 1.4×	102 1.2×	21	588
C. H. Carter United States	12	465 0.8×	218 0.8×	241 1.1×	85 0.8×	97 1.1×	15	574
H. Mitlehner Germany	14	882 1.6×	141 0.5×	49 0.2×	83 0.8×	69 0.8×	43	923
Young-Kil Kwon South Korea	13	172 0.3×	84 0.3×	245 1.1×	84 0.8×	92 1.1×	35	365
Yang Lu China	14	398 0.7×	121 0.5×	415 1.9×	86 0.8×	169 2.0×	65	530
J. R. Flemish United States	15	472 0.8×	134 0.5×	62 0.3×	146 1.4×	123 1.4×	47	575
G. Augustine United States	12	629 1.1×	138 0.5×	86 0.4×	104 1.0×	115 1.4×	36	692
H. Ziad Belgium	11	405 0.7×	140 0.5×	215 1.0×	35 0.3×	79 0.9×	20	476
C.H. Carter United States	8	588 1.0×	157 0.6×	70 0.3×	106 1.0×	83 1.0×	14	644

Countries citing papers authored by S. N. Yurkov

Since Specialization

Citations

This map shows the geographic impact of S. N. Yurkov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. N. Yurkov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. N. Yurkov more than expected).

Fields of papers citing papers by S. N. Yurkov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. N. Yurkov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. N. Yurkov. The network helps show where S. N. Yurkov may publish in the future.

Co-authorship network of co-authors of S. N. Yurkov

This figure shows the co-authorship network connecting the top 25 collaborators of S. N. Yurkov. A scholar is included among the top collaborators of S. N. Yurkov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. N. Yurkov. S. N. Yurkov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Mnatsakanov, T. T., et al.. (2020). S-Shaped I–V Characteristics of High-Power Schottky Diodes at High Current Densities. Semiconductors. 54(5). 567–574. 2 indexed citations

Yurkov, S. N., et al.. (2018). Theoretical Analysis of the Effect of dU/dt in 4H–SiC Thyristor Structures. Technical Physics. 63(10). 1497–1503.

Mnatsakanov, T. T., et al.. (2017). Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers. Semiconductors. 51(8). 1081–1086. 1 indexed citations

Mnatsakanov, T. T., S. N. Yurkov, M. E. Levinshteĭn, Lin Cheng, & John W. Palmour. (2014). Specific features of switch-on processes in high-voltage (18 kV class) optically triggered 4H-SiC thyristors. Semiconductor Science and Technology. 29(5). 55005–55005. 12 indexed citations

Yurkov, S. N., T. T. Mnatsakanov, M. E. Levinshteĭn, Lin Cheng, & John W. Palmour. (2014). Specific features of the switch-on gate current and different switch-on modes in silicon carbide thyristors. Semiconductor Science and Technology. 29(12). 125012–125012. 8 indexed citations

Mnatsakanov, T. T., et al.. (2013). Transport phenomena in intrinsic semiconductors and insulators at high current densities: Suppression of the broken neutrality drift. Journal of Applied Physics. 114(6). 1 indexed citations

Mnatsakanov, T. T., et al.. (2013). Violation of neutrality and occurrence of S-shaped current-voltage characteristic for doped semiconductors under double injection. Semiconductors. 47(3). 327–334. 1 indexed citations

Mnatsakanov, T. T., et al.. (2011). Modulation waves of charge carriers in n- and p-type semiconductor layers. Semiconductors. 45(2). 192–197. 3 indexed citations

Mnatsakanov, T. T., et al.. (2010). Physical limitations of the diffusive approximation in semiconductor device modeling. Solid-State Electronics. 56(1). 60–67. 5 indexed citations

10.

Mnatsakanov, T. T., et al.. (2007). Specific features of dynamic injection and base layer modulation processes in power n +-p-p + diodes. Semiconductors. 41(11). 1381–1387. 1 indexed citations

11.

Mnatsakanov, T. T., et al.. (2005). Paradoxes related to electron-hole scattering in junction structures. Journal of Applied Physics. 97(10). 7 indexed citations

12.

Levinshteĭn, M. E., T. T. Mnatsakanov, Pavel A. Ivanov, et al.. (2004). Steady-state and transient characteristics of 10 kV 4H-SiC diodes. Solid-State Electronics. 48(5). 807–811. 30 indexed citations

13.

Mnatsakanov, T. T., et al.. (2003). The critical charge concept for 4H-SiC-based thyristors. Solid-State Electronics. 47(9). 1581–1587. 12 indexed citations

14.

Grekhov, I. V., et al.. (2003). On the fast recovery of the blocking property of silicon carbide diodes. Semiconductors. 37(9). 1123–1126. 7 indexed citations

15.

Mnatsakanov, T. T., M. E. Levinshteĭn, L. I. Pomortseva, et al.. (2003). Carrier mobility model for GaN. Solid-State Electronics. 47(1). 111–115. 225 indexed citations

16.

Levinshteĭn, M. E., Pavel A. Ivanov, T. T. Mnatsakanov, et al.. (2003). The critical charge density in high voltage 4H-SiC thyristors. Solid-State Electronics. 47(4). 699–704. 11 indexed citations

17.

Levinshteĭn, M. E., T. T. Mnatsakanov, Pavel A. Ivanov, et al.. (2001). Temperature dependence of turn-on processes in 4H–SiC thyristors. Solid-State Electronics. 45(3). 453–459. 26 indexed citations

18.

Mnatsakanov, T. T., L. I. Pomortseva, & S. N. Yurkov. (2001). Semiempirical model of carrier mobility in silicon carbide for analyzing its dependence on temperature and doping level. Semiconductors. 35(4). 394–397. 38 indexed citations

19.

Levinshteĭn, M. E., T. T. Mnatsakanov, P. A. Ivanov, et al.. (2000). High voltage SiC diodes with small recovery time. Electronics Letters. 36(14). 1241–1242. 27 indexed citations

20.

Pamler, W., et al.. (1988). Summary Abstract: Auger analysis of sputter deposited TiNx thin films. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 1106–1107. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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