A. Hoffmann

989 total citations
50 papers, 748 citations indexed

About

A. Hoffmann is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, A. Hoffmann has authored 50 papers receiving a total of 748 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 6 papers in Biomedical Engineering. Recurrent topics in A. Hoffmann's work include Advancements in Semiconductor Devices and Circuit Design (27 papers), Semiconductor materials and devices (23 papers) and Integrated Circuits and Semiconductor Failure Analysis (14 papers). A. Hoffmann is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (27 papers), Semiconductor materials and devices (23 papers) and Integrated Circuits and Semiconductor Failure Analysis (14 papers). A. Hoffmann collaborates with scholars based in France, United States and Lebanon. A. Hoffmann's co-authors include Z. Ouennoughi, M. Chegaar, M. Valenza, Jean‐Pierre Charles, S.E. Kerns, D.V. Kerns, F. Mart́ınez, N. Akil, J.C. Vildeuil and C. Leyris and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

A. Hoffmann

48 papers receiving 712 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Hoffmann France 14 602 140 137 110 90 50 748
Yifei Li United States 15 879 1.5× 17 0.1× 126 0.9× 53 0.5× 683 7.6× 82 1.0k
Bo Lü China 14 358 0.6× 21 0.1× 41 0.3× 55 0.5× 206 2.3× 100 643
S. Faralli Italy 19 963 1.6× 12 0.1× 42 0.3× 107 1.0× 402 4.5× 111 1.1k
Hao Tian United States 10 393 0.7× 11 0.1× 51 0.4× 71 0.6× 345 3.8× 43 497
Rui‐Bo Jin China 16 349 0.6× 18 0.1× 34 0.2× 63 0.6× 511 5.7× 71 775
Yongpeng Zhao China 13 476 0.8× 3 0.0× 46 0.3× 115 1.0× 280 3.1× 93 673
Shangjian Zhang China 18 1.3k 2.2× 4 0.0× 117 0.9× 110 1.0× 1.2k 13.1× 146 1.5k
Zihang Zhu China 21 1.1k 1.8× 10 0.1× 35 0.3× 43 0.4× 705 7.8× 128 1.4k
Guangyu Hu United States 8 289 0.5× 13 0.1× 235 1.7× 78 0.7× 110 1.2× 22 430
Hao Ouyang China 15 117 0.2× 35 0.3× 89 0.6× 48 0.4× 53 0.6× 35 518

Countries citing papers authored by A. Hoffmann

Since Specialization
Citations

This map shows the geographic impact of A. Hoffmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Hoffmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Hoffmann more than expected).

Fields of papers citing papers by A. Hoffmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Hoffmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Hoffmann. The network helps show where A. Hoffmann may publish in the future.

Co-authorship network of co-authors of A. Hoffmann

This figure shows the co-authorship network connecting the top 25 collaborators of A. Hoffmann. A scholar is included among the top collaborators of A. Hoffmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Hoffmann. A. Hoffmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Arnaud, Alfredo & A. Hoffmann. (2016). A compact model for flicker noise in MOSFETs considering both correlated mobility and carrier number fluctuations. Analog Integrated Circuits and Signal Processing. 89(3). 611–618. 3 indexed citations
3.
Salame, Chafic, et al.. (2011). Temperature effect on an N‐channel commercial VDMOSFET transistor. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(3). 875–878. 2 indexed citations
4.
Leyris, C., F. Mart́ınez, M. Valenza, A. Hoffmann, & J.C. Vildeuil. (2007). Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization. Microelectronics Reliability. 47(4-5). 573–576. 2 indexed citations
5.
Hoffmann, A., et al.. (2007). 1 ∕ f noise and percolation in carbon nanotube random networks. Applied Physics Letters. 90(8). 37 indexed citations
6.
Leyris, C., J.C. Vildeuil, F. Roy, et al.. (2006). Response of Correlated Double Sampling CMOS Imager Circuit to Random Telegraph Signal Noise. HAL (Le Centre pour la Communication Scientifique Directe). 109–114. 15 indexed citations
7.
Mart́ınez, F., C. Leyris, M. Valenza, et al.. (2005). Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements. Microelectronic Engineering. 80. 54–57. 19 indexed citations
8.
Hoffmann, A., et al.. (2003). Radiation hardening of power MOSFETs using electrical stress. 365–370. 5 indexed citations
9.
10.
Ouennoughi, Z., et al.. (2002). Extraction of Schottky diode parameters including parallel conductance using a vertical optimization method. Solid-State Electronics. 46(5). 615–619. 38 indexed citations
11.
12.
Chegaar, M., Z. Ouennoughi, & A. Hoffmann. (2001). A new method for evaluating illuminated solar cell parameters. Solid-State Electronics. 45(2). 293–296. 144 indexed citations
13.
Salame, Chafic, A. Hoffmann, P. Mialhe, et al.. (2000). Size effect on SEB cross-section of VDMOSFETS. Radiation effects and defects in solids. 152(3). 191–200. 2 indexed citations
14.
Charles, Jean‐Pierre, et al.. (2000). La Jonction du Solaire à la Microélectronique. Journal of Renewable Energies. 3(1). 1–16. 8 indexed citations
15.
Mialhe, P., et al.. (1997). Diode Parameter Determination Applied to LDD‐MOSFETs for DeviceCharacterization. Active and Passive Electronic Components. 20(3). 157–163. 3 indexed citations
16.
Murari, A., Pla N, O. Hemming, et al.. (1997). Signal processing and general purpose data acquisition system for on-line tomographic measurements. Review of Scientific Instruments. 68(1). 951–954. 3 indexed citations
17.
Martin, P., A. Murari, A. Buffa, et al.. (1997). Soft x-ray and bolometric tomography in RFX (abstract). Review of Scientific Instruments. 68(1). 761–761. 3 indexed citations
18.
Hoffmann, A., M. Valenza, D. Rigaud, & L.K.J. Vandamme. (1993). Radiation effects on radiation hardened LDD CMOS transistors. AIP conference proceedings. 285. 362–365. 5 indexed citations
19.
Hoffmann, A., et al.. (1989). European R & D co-ordinate programme on structural integrity of fast breeder reactors. International Journal of Pressure Vessels and Piping. 37(1-4). 127–140. 1 indexed citations
20.
Thiemann, H., A. Hoffmann, & A. Piel. (1987). Diagnostic Concept of the Resonance Cone Technique and its Application in Ground and Space Experiments. 270. 139. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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