Thomas Kosel

1.2k total citations
18 papers, 996 citations indexed

About

Thomas Kosel is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Thomas Kosel has authored 18 papers receiving a total of 996 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Electrical and Electronic Engineering, 9 papers in Condensed Matter Physics and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Thomas Kosel's work include GaN-based semiconductor devices and materials (9 papers), Semiconductor materials and devices (8 papers) and Semiconductor Quantum Structures and Devices (5 papers). Thomas Kosel is often cited by papers focused on GaN-based semiconductor devices and materials (9 papers), Semiconductor materials and devices (8 papers) and Semiconductor Quantum Structures and Devices (5 papers). Thomas Kosel collaborates with scholars based in United States, Russia and South Korea. Thomas Kosel's co-authors include Huili Grace Xing, Patrick Fay, Debdeep Jena, John Simon, Guowang Li, Ronghua Wang, Faiza Faria, Zongyang Hu, Yuanzheng Yue and Jia Guo and has published in prestigious journals such as Physical Review Letters, Nano Letters and Environmental Science & Technology.

In The Last Decade

Thomas Kosel

18 papers receiving 957 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Thomas Kosel United States 12 638 543 389 290 238 18 996
J. C. Moreno France 13 347 0.5× 394 0.7× 175 0.4× 185 0.6× 97 0.4× 30 628
Paweł Kempisty Poland 17 578 0.9× 305 0.6× 300 0.8× 155 0.5× 77 0.3× 74 770
Jicai Zhang China 14 224 0.4× 314 0.6× 109 0.3× 96 0.3× 276 1.2× 56 593
Sining Dong China 18 275 0.4× 157 0.3× 581 1.5× 295 1.0× 71 0.3× 68 1.0k
Yao-zhuang Nie China 19 199 0.3× 316 0.6× 311 0.8× 501 1.7× 96 0.4× 88 1.1k
J. C. Keay United States 14 154 0.2× 297 0.5× 102 0.3× 271 0.9× 82 0.3× 29 568
Yu. S. Ponosov Russia 14 161 0.3× 161 0.3× 137 0.4× 174 0.6× 73 0.3× 67 618
Xue‐Zeng Lu United States 13 133 0.2× 137 0.3× 289 0.7× 136 0.5× 69 0.3× 33 599
E. J. Williams Switzerland 10 160 0.3× 140 0.3× 150 0.4× 149 0.5× 123 0.5× 20 495
Worasom Kundhikanjana United States 12 122 0.2× 299 0.6× 147 0.4× 481 1.7× 297 1.2× 27 906

Countries citing papers authored by Thomas Kosel

Since Specialization
Citations

This map shows the geographic impact of Thomas Kosel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Thomas Kosel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Thomas Kosel more than expected).

Fields of papers citing papers by Thomas Kosel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Thomas Kosel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Thomas Kosel. The network helps show where Thomas Kosel may publish in the future.

Co-authorship network of co-authors of Thomas Kosel

This figure shows the co-authorship network connecting the top 25 collaborators of Thomas Kosel. A scholar is included among the top collaborators of Thomas Kosel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Thomas Kosel. Thomas Kosel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Yue, Yuanzheng, Zongyang Hu, Jia Guo, et al.. (2013). Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz. Japanese Journal of Applied Physics. 52(8S). 08JN14–08JN14. 77 indexed citations
2.
Fathipour, Sara, Wan Sik Hwang, Thomas Kosel, et al.. (2013). Exfoliated MoTe<inf>2</inf> field-effect transistor. 115–116. 2 indexed citations
3.
Kim, Eok Su, Sunkook Kim, Yun‐Sung Lee, et al.. (2012). Multilayer transition-metal dichalcogenide channel Thin-Film Transistors. 11. 5.5.1–5.5.4. 4 indexed citations
4.
Lu, Yeqing, Guangle Zhou, Rui Li, et al.. (2012). Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned. IEEE Electron Device Letters. 33(5). 655–657. 98 indexed citations
5.
Li, Guowang, Ronghua Wang, Jia Guo, et al.. (2012). Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts. IEEE Electron Device Letters. 33(5). 661–663. 43 indexed citations
6.
Yue, Yuanzheng, Zongyang Hu, Jia Guo, et al.. (2012). InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz. IEEE Electron Device Letters. 33(7). 988–990. 284 indexed citations
7.
Verma, Jai, John Simon, Vladimir Protasenko, et al.. (2011). N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping. Applied Physics Letters. 99(17). 56 indexed citations
8.
Barton, Lauren E., K. E. Grant, Thomas Kosel, Andrew N. Quicksall, & Patricia A. Maurice. (2011). Size-Dependent Pb Sorption to Nanohematite in the Presence and Absence of a Microbial Siderophore. Environmental Science & Technology. 45(8). 3231–3237. 32 indexed citations
9.
Jena, Debdeep, John Simon, Yu Cao, et al.. (2011). Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design. physica status solidi (a). 208(7). 1511–1516. 74 indexed citations
10.
Simon, John, Ze Zhang, Kevin Goodman, et al.. (2009). Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures. Physical Review Letters. 103(2). 26801–26801. 108 indexed citations
11.
Staleva, Hristina, et al.. (2009). Coupling to light, and transport and dissipation of energy in silver nanowires. Physical Chemistry Chemical Physics. 11(28). 5889–5889. 63 indexed citations
12.
Simon, John, Ze Zhang, Kevin Goodman, et al.. (2009). Polarization-induced zener tunnel junctions in wide-bandgap heterostructures. 101–102. 3 indexed citations
13.
Zhang, Qin, Surajit Sutar, Thomas Kosel, & Alan Seabaugh. (2008). Fully-depleted Ge interband tunnel transistor: Modeling and junction formation. Solid-State Electronics. 53(1). 30–35. 45 indexed citations
14.
Wang, Kejia, Thomas Kosel, & Debdeep Jena. (2008). Structural and transport properties of InN grown on GaN by MBE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1811–1814. 9 indexed citations
15.
Zhang, Qin, Surajit Sutar, Thomas Kosel, & Alan Seabaugh. (2007). Rapid melt growth of Ge tunnel junctions for interband tunnel transistors. 1–2. 1 indexed citations
16.
Wang, Kejia, Yu Cao, John Simon, et al.. (2006). Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy. Applied Physics Letters. 89(16). 31 indexed citations
17.
Mintairov, A. M., Thomas Kosel, Kai Sun, V. M. Ustinov, & J. L. Merz. (2004). Near-Field Scanning Optical Microscopy of Phase Separation Effects in Dilute Nitride Alloys.. MRS Proceedings. 838. 1 indexed citations
18.
Hu, Min, Patrick Hillyard, Gregory V. Hartland, et al.. (2004). Determination of the Elastic Constants of Gold Nanorods Produced by Seed Mediated Growth. Nano Letters. 4(12). 2493–2497. 65 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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