Markus Bosund

580 total citations
20 papers, 504 citations indexed

About

Markus Bosund is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Markus Bosund has authored 20 papers receiving a total of 504 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 10 papers in Materials Chemistry and 8 papers in Condensed Matter Physics. Recurrent topics in Markus Bosund's work include Semiconductor materials and devices (15 papers), GaN-based semiconductor devices and materials (8 papers) and Semiconductor Quantum Structures and Devices (5 papers). Markus Bosund is often cited by papers focused on Semiconductor materials and devices (15 papers), GaN-based semiconductor devices and materials (8 papers) and Semiconductor Quantum Structures and Devices (5 papers). Markus Bosund collaborates with scholars based in Finland, United States and Czechia. Markus Bosund's co-authors include Harri Lipsanen, Matti Putkonen, Timo Sajavaara, Teppo Huhtio, Veli-Matti Airaksinen, Mikko Laitinen, T. Hakkarainen, M. Sopanen, Abuduwayiti Aierken and Marja‐Leena Kääriäinen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Markus Bosund

20 papers receiving 483 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Markus Bosund Finland 12 355 235 146 85 84 20 504
Xihong Zu China 13 177 0.5× 336 1.4× 45 0.3× 56 0.7× 58 0.7× 29 497
Jiqiang Jia China 12 173 0.5× 192 0.8× 88 0.6× 54 0.6× 56 0.7× 55 398
J. E. Hoelscher United States 10 246 0.7× 425 1.8× 87 0.6× 25 0.3× 66 0.8× 23 524
Xinjian Xie China 13 251 0.7× 402 1.7× 80 0.5× 200 2.4× 67 0.8× 57 573
Zijuan Xie China 9 355 1.0× 363 1.5× 43 0.3× 108 1.3× 37 0.4× 24 543
Jonathan M. Polfus Norway 18 257 0.7× 857 3.6× 74 0.5× 61 0.7× 98 1.2× 46 962
Sukkaneste Tungasmita Thailand 12 100 0.3× 261 1.1× 234 1.6× 29 0.3× 138 1.6× 49 471
Sébastien Cahen France 14 320 0.9× 493 2.1× 53 0.4× 24 0.3× 56 0.7× 49 616
Muhammad Farooq Saleem China 12 190 0.5× 225 1.0× 32 0.2× 138 1.6× 50 0.6× 31 427
Bruno Sanches de Lima Brazil 12 177 0.5× 241 1.0× 57 0.4× 35 0.4× 65 0.8× 41 398

Countries citing papers authored by Markus Bosund

Since Specialization
Citations

This map shows the geographic impact of Markus Bosund's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Markus Bosund with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Markus Bosund more than expected).

Fields of papers citing papers by Markus Bosund

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Markus Bosund. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Markus Bosund. The network helps show where Markus Bosund may publish in the future.

Co-authorship network of co-authors of Markus Bosund

This figure shows the co-authorship network connecting the top 25 collaborators of Markus Bosund. A scholar is included among the top collaborators of Markus Bosund based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Markus Bosund. Markus Bosund is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bosund, Markus, Matti Putkonen, Björn M. Stühmeier, et al.. (2020). HOR Activity of Pt-TiO2-Y at Unconventionally High Potentials Explained: The Influence of SMSI on the Electrochemical Behavior of Pt. Journal of The Electrochemical Society. 167(8). 84517–84517. 39 indexed citations
2.
Deuermeier, Jonas, P. Soininen, Markus Bosund, et al.. (2019). Control of Eu Oxidation State in Y2O3−xSx:Eu Thin-Film Phosphors Prepared by Atomic Layer Deposition: A Structural and Photoluminescence Study. Materials. 13(1). 93–93. 7 indexed citations
3.
Yota, Jiro, et al.. (2019). Comparative study and characterization of atomic layer deposition Al2O3 films as metal-insulator-metal capacitor dielectric for GaAs hetero-junction bipolar transistor technology. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 37(5). 3 indexed citations
4.
5.
Kilpi, Lauri, Oili Ylivaara, Xuwen Liu, et al.. (2017). Tribological properties of thin films made by atomic layer deposition sliding against silicon. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 36(1). 8 indexed citations
6.
Zazpe, Raúl, Jan Přikryl, V. Gärtnerová, et al.. (2017). Atomic Layer Deposition Al2O3 Coatings Significantly Improve Thermal, Chemical, and Mechanical Stability of Anodic TiO2 Nanotube Layers. Langmuir. 33(13). 3208–3216. 44 indexed citations
7.
Bosund, Markus, Henri Jussila, Abuduwayiti Aierken, et al.. (2014). Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces. Applied Surface Science. 314. 570–574. 4 indexed citations
8.
Sintonen, Sakari, et al.. (2014). Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD. Journal of Crystal Growth. 398. 18–22. 18 indexed citations
9.
Putkonen, Matti, Markus Bosund, Oili Ylivaara, et al.. (2014). Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors. Thin Solid Films. 558. 93–98. 68 indexed citations
10.
Norin, Lars, et al.. (2012). Ytterbium-doped fibers fabricated with atomic layer deposition method. Optics Express. 20(22). 25085–25085. 30 indexed citations
11.
Bosund, Markus, Henri Jussila, T. Tuomi, et al.. (2012). Effect of atomic‐layer‐deposited AlN on near‐surface InGaAs/GaAs structures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(7). 1560–1562. 1 indexed citations
12.
Jussila, Henri, J. Oksanen, Juha Riikonen, et al.. (2012). High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning. Applied Physics Letters. 100(7). 19 indexed citations
13.
Bosund, Markus, et al.. (2012). Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition. Journal of Applied Physics. 111(6). 9 indexed citations
14.
Bosund, Markus, Timo Sajavaara, Mikko Laitinen, et al.. (2011). Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 30(1). 13 indexed citations
15.
Bosund, Markus, Timo Sajavaara, Mikko Laitinen, et al.. (2011). Properties of AlN grown by plasma enhanced atomic layer deposition. Applied Surface Science. 257(17). 7827–7830. 106 indexed citations
16.
Xie, Dan, Tingting Feng, Xueguang Han, et al.. (2011). ATOMIC LAYER DEPOSITION HfO2 FILM USED AS BUFFER LAYER OF THE Pt/(Bi0.95Nd0.05)(Fe0.95Mn0.05)O3/HfO2/Si CAPACITORS FOR FeFET APPLICATION. Journal of Advanced Dielectrics. 1(3). 369–377. 6 indexed citations
17.
Bosund, Markus, Abuduwayiti Aierken, T. Hakkarainen, et al.. (2010). GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride. Applied Surface Science. 256(24). 7434–7437. 45 indexed citations
18.
Bosund, Markus, Kenichiro Mizohata, T. Hakkarainen, et al.. (2009). Atomic layer deposition of ytterbium oxide using -diketonate and ozone precursors. Applied Surface Science. 256(3). 847–851. 21 indexed citations
19.
Bosund, Markus, et al.. (2008). Passivation of GaAs surface by atomic-layer-deposited titanium nitride. Applied Surface Science. 254(17). 5385–5389. 16 indexed citations
20.
Vilhunen, Sari, Markus Bosund, Marja‐Leena Kääriäinen, David Cameron, & Mika Sillanpää. (2008). Atomic layer deposited TiO2 films in photodegradation of aqueous salicylic acid. Separation and Purification Technology. 66(1). 130–134. 46 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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