R. Cadoret

1.0k total citations
57 papers, 763 citations indexed

About

R. Cadoret is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, R. Cadoret has authored 57 papers receiving a total of 763 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 18 papers in Materials Chemistry. Recurrent topics in R. Cadoret's work include Semiconductor Quantum Structures and Devices (23 papers), GaN-based semiconductor devices and materials (16 papers) and Semiconductor materials and devices (15 papers). R. Cadoret is often cited by papers focused on Semiconductor Quantum Structures and Devices (23 papers), GaN-based semiconductor devices and materials (16 papers) and Semiconductor materials and devices (15 papers). R. Cadoret collaborates with scholars based in France, Sweden and United Kingdom. R. Cadoret's co-authors include F. Hottier, Agnès Trassoudaine, Dominique Castelluci, Alberto Pimpinelli, L. Hollan, Evelyne Gil, Bruno Gérard, Yamina André, P. Disseix and J.M. Durand and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and Applied Surface Science.

In The Last Decade

R. Cadoret

56 papers receiving 702 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Cadoret France 18 451 331 323 238 126 57 763
I. M. Vitomirov United States 18 411 0.9× 216 0.7× 680 2.1× 157 0.7× 129 1.0× 51 935
Nicholas G. Norton United Kingdom 5 358 0.8× 236 0.7× 548 1.7× 158 0.7× 98 0.8× 6 809
Takeshi Inaoka Japan 17 318 0.7× 373 1.1× 447 1.4× 186 0.8× 143 1.1× 83 855
J.M.C. Thornton United Kingdom 13 333 0.7× 233 0.7× 627 1.9× 123 0.5× 100 0.8× 29 827
N. Tabatabaie United States 17 606 1.3× 240 0.7× 731 2.3× 170 0.7× 104 0.8× 37 992
M. Lohmeier Netherlands 12 238 0.5× 295 0.9× 463 1.4× 117 0.5× 89 0.7× 18 694
Ch. Kleint Germany 17 306 0.7× 350 1.1× 589 1.8× 70 0.3× 163 1.3× 87 898
T. C. Hsieh United States 14 276 0.6× 297 0.9× 652 2.0× 314 1.3× 95 0.8× 25 971
Masashi Ozeki Japan 20 711 1.6× 299 0.9× 792 2.5× 183 0.8× 107 0.8× 92 1.1k
Leroy L. Chang United States 4 282 0.6× 221 0.7× 434 1.3× 100 0.4× 53 0.4× 5 629

Countries citing papers authored by R. Cadoret

Since Specialization
Citations

This map shows the geographic impact of R. Cadoret's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Cadoret with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Cadoret more than expected).

Fields of papers citing papers by R. Cadoret

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Cadoret. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Cadoret. The network helps show where R. Cadoret may publish in the future.

Co-authorship network of co-authors of R. Cadoret

This figure shows the co-authorship network connecting the top 25 collaborators of R. Cadoret. A scholar is included among the top collaborators of R. Cadoret based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Cadoret. R. Cadoret is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
André, Yamina, Agnès Trassoudaine, R. Cadoret, et al.. (2007). Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers. Journal of Crystal Growth. 306(1). 86–93. 37 indexed citations
2.
Trassoudaine, Agnès, et al.. (2007). Low-cost high-quality GaN by one-step growth. Journal of Crystal Growth. 310(5). 924–929. 2 indexed citations
3.
Parillaud, O., et al.. (2002). Defect-free InP films on Si substrates obtained by hydride vapor phase conformal growth. 91 13. 547–550. 1 indexed citations
4.
Trassoudaine, Agnès, et al.. (2001). Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen. Journal of Crystal Growth. 222(3). 538–548. 15 indexed citations
5.
Cadoret, R., et al.. (2001). Computed Growth Rates of (001) GaN Substrates in the Hydride Vapour Phase Method. physica status solidi (a). 183(1). 5–9. 1 indexed citations
6.
Trassoudaine, Agnès, et al.. (2001). Hydrogen and nitrogen ambient effects on epitaxial growth of GaN by hydride vapour phase epitaxy. Journal of Crystal Growth. 230(3-4). 372–376. 11 indexed citations
7.
Trassoudaine, Agnès, et al.. (2000). A new mechanism in the growth process of GaN by HVPE. MRS Proceedings. 639. 1 indexed citations
8.
Disseix, P., et al.. (1993). Photoluminescence studies in strained InAs/InP quantum wells grown by hydride vapour-phase epitaxy. Semiconductor Science and Technology. 8(8). 1666–1670. 4 indexed citations
9.
Gil, Evelyne, R. Cadoret, P. Disseix, et al.. (1991). Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor-phase epitaxy. Journal of Applied Physics. 70(3). 1638–1641. 24 indexed citations
10.
Cadoret, R., et al.. (1991). Experimental and theoretical study of InP homoepitaxy by chemical vapour deposition from gaseous indium chloride and hydrogen diluted phosphine. Journal of Crystal Growth. 112(4). 691–698. 13 indexed citations
11.
Mihailovic, M., et al.. (1990). Epitaxial growth of InP/InAs/InP quantum wells. Superlattices and Microstructures. 8(2). 175–177. 1 indexed citations
12.
Cadoret, R., et al.. (1986). Approach of the interplay between kinetics and diffusion in hot wall reactors used in V.P.E. of III–V compounds. Materials Research Bulletin. 21(10). 1259–1267. 2 indexed citations
13.
Cadoret, R. & F. Hottier. (1983). Mechanisms of silicon monocrystalline growth from SiH4/H2 at reduced pressures. Journal of Crystal Growth. 61(2). 259–274. 26 indexed citations
14.
Gentner, J.L., C. Bérnard, & R. Cadoret. (1982). Experimental and theoretical study of low pressure GaAs VPE in the chloride system. Journal of Crystal Growth. 56(2). 332–343. 18 indexed citations
15.
Cadoret, R., et al.. (1981). Controle de la croissance cristalline, a partir de la phase vapeur, en tube ferme. Materials Research Bulletin. 16(7). 785–792. 19 indexed citations
16.
Hottier, F. & R. Cadoret. (1981). Surface processes in low pressure chemical vapour deposition. Journal of Crystal Growth. 52. 199–206. 21 indexed citations
17.
Cadoret, R., et al.. (1980). Investigation of the parameters which control the growth of {111} and {} faces of GaAs by chemical vapour deposit. Journal of Crystal Growth. 50(3). 663–674. 16 indexed citations
18.
Cadoret, R., et al.. (1975). A theoretical treatment of GaAs growth by vapour phase transport for {001} orientation. Journal of Crystal Growth. 31. 142–146. 37 indexed citations
19.
Oberlin, M., et al.. (1975). GaAs growth by vapour phase transport. Journal of Crystal Growth. 29(2). 176–186. 17 indexed citations
20.
Cadoret, R.. (1971). A Statistical Treatment of the Free Energy of Binary Non‐Homogeneous Solutions. physica status solidi (b). 46(1). 291–298. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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