Q. Wahab

2.6k citations

96 papers · 2.1k indexed · h-index 23

Impact in

Electrical and Electronic Engineering top 2%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Electromagnetic Compatibility and Noise Suppression
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
Ceramics and Composites top 5%

Papers in

Electrical and Electronic Engineering 91
- Silicon Carbide Semiconductor Technologies 67
- Semiconductor materials and devices 42
- Radio Frequency Integrated Circuit Design 19
- Silicon and Solar Cell Technologies 10
Atomic and Molecular Physics, and Optics 33
- Semiconductor materials and interfaces 29

Co-authors: N. Nordell Andrey O. Konstantinov U. Lindefelt M. Willander Erik Janzén Lisa M. Porter Anne Henry M. Friesel
Journals: Journal of Applied Physics (8 papers)Applied Physics Letters (8 papers)Journal of Electronic Materials (6 papers)Journal of Crystal Growth (4 papers)Materials Science and Engineering B (3 papers)
Partner nations: Sweden Pakistan United States

In The Last Decade

Q. Wahab

90 papers receiving 2.0k citations

Peers

Countries citing papers authored by Q. Wahab

Since Specialization

Citations

This map shows the geographic impact of Q. Wahab's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Q. Wahab with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Q. Wahab more than expected).

Fields of papers citing papers by Q. Wahab

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Q. Wahab. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Q. Wahab. The network helps show where Q. Wahab may publish in the future.

Co-authors

The 25 scholars most cited alongside Q. Wahab, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Q. Wahab Line = papers co-authored together Q. Wahab links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Effect of Annealing Atmosphere on the Diode Behaviour of ZnO/Si Heterojunction Elektronika ir Elektrotechnika ·Sadia Muniza Faraz, Syed Riaz un Nabi Jafri, Zarreen Tajvar, Naveed ul Hassan Alvi, Q. Wahab, Omer Nur	2021	2
2	A sub-10mW, noise cancelling, wideband LNA for UWB applications AEU - International Journal of Electronics and Communications ·Sana Arshad, Rashad Ramzan, Muhammad Khurram, Q. Wahab	2014	47
3	Characterization of Sic by Means of C-V Measurement of Respective Schottky Diode by DLTS Noor ul Huda Khan Asghar, Hamdullah Khan, Zaheer Abbas Gilani, M. S. Awan, I. Ahmad, Q. Wahab, Muhammad Asghar	2012	0
4	A 24 GHz Class-A power amplifier in 0.13um CMOS technology Hashim Raza Khan, Q. Wahab	2011	2
5	Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method Physica B Condensed Matter ·Muhammad Asghar, Faisal Iqbal, Sadia Muniza Faraz, Valdas Jokubavičius, Q. Wahab, Mikael Syväjärvi	2011	0
6	Temperature dependent current transport in Schottky diodes of nano structured ZnO grown on Si by magnetron sputtering Sadia Muniza Faraz, Volodymyr Khranovskyy, Rositsa Yakimova, A. Ulyashin, Q. Wahab	2011	3
7	A 900 MHz 26.8 dBm differential Class-E CMOS power amplifier German Microwave Conference ·Hashim Raza Khan, Q. Wahab, Jonas Fritzin, Atila Alvandpour	2010	3
8	Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy Journal of Applied Physics ·H. Ashraf, Muhammad Arshad, Sadia Muniza Faraz, Q. Wahab, P.R. Hageman, M. Asghar	2010	14
9	Time-delayed transformation of defects in zinc oxide layers grown along the zinc-face using a hydrothermal technique Journal of Applied Physics ·Hadia Noor, Peter Klason, Omer Nur, Q. Wahab, M. Asghar, M. Willander	2009	15
10	Designing of High Efficiency Power Amplifier Based on Physical Model of SiC MESFET in TCAD Sher Azam, C. Svensson, Q. Wahab	2007	1
11	A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC Materials science forum ·D. J. Ewing, Q. Wahab, Sergey P. Tumakha, L. J. Brillson, X.Y. Ma, Tangali S. Sudarshan, Lisa M. Porter	2006	1
12	DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors Materials science forum ·Rolf Jonsson, Q. Wahab, S. Rudner	2004	1
13	Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN physica status solidi (a) ·T. Paskova, Ewa M. Goldys, Vanya Darakchieva, Ulf S�dervall, M. Godlewski, Marcin Zieliński, E. Valcheva, C.F. Carlstr�m, Q. Wahab, B. Ḿonemar	2001	1
14	A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers Materials science forum ·Joakim Eriksson, Niklas Rorsman, Herbert Zirath, Rolf Jonsson, Q. Wahab, S. Rudner	2001	7
15	Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes Materials science forum ·Q. Wahab, Alexsandre Ellison, C. Hallin, Anne Henry, J. Di Persio, Rafael Perez Martinez, Erik Janzén	2000	22
16	Characterization of SiO₂/SiC Samples Using Photoelectron Spectroscopy MRS Proceedings ·L. I. Johansson, Per‐Anders Glans, Q. Wahab, T.M. Grehk, T. Eickhoff, W. Drube	1999	1
17	Liquid phase epitaxial growth of SiC Journal of Crystal Growth ·Mikael Syväjärvi, Rositza Yakimova, H. H. Radamson, Nguyên Tiên Són, Q. Wahab, Ivan G. Ivanov, Erik Janzén	1999	49
18	High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers Materials science forum ·Tsunenobu Kimoto, Q. Wahab, Alexsandre Ellison, Urban Forsberg, M. Tuominen, Rositza Yakimova, Anne Henry, Erik Janzén	1998	16
19	Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide Applied Physics Letters ·Andrey O. Konstantinov, N. Nordell, Q. Wahab, U. Lindefelt	1998	32
20	Fabrication and characterization of MOS devices on 3CSiC films grown by reactive magnetron sputtering on Si(111) substrates Thin Solid Films ·Q. Wahab, Raşit Turan, Lars Hultman, M. Willander, J.‐E. Sundgren	1996	7

About Q. Wahab

Q. Wahab is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics and Ceramics and Composites, having authored 96 papers that have together received 2.1k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (67 papers), Semiconductor materials and devices (42 papers), Semiconductor materials and interfaces (29 papers), Radio Frequency Integrated Circuit Design (19 papers), Copper Interconnects and Reliability (15 papers), GaN-based semiconductor devices and materials (11 papers), ZnO doping and properties (10 papers) and Silicon and Solar Cell Technologies (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.9k citations), Ceramics and Composites (158 citations), Electronic, Optical and Magnetic Materials (325 citations), Atomic and Molecular Physics, and Optics (546 citations) and Condensed Matter Physics (158 citations). Q. Wahab has collaborated with scholars based in Sweden, Pakistan and United States. Frequent co-authors include N. Nordell, Andrey O. Konstantinov, U. Lindefelt, M. Willander, Erik Janzén, Lisa M. Porter, Anne Henry, M. Friesel, Boris B. Straumal and Noel T. Nuhfer. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Journal of Electronic Materials, Journal of Crystal Growth and Materials Science and Engineering B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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