C. Dubois

859 citations

57 papers · 711 indexed · h-index 15

Impact in

Electrical and Electronic Engineering top 10%
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces

Papers in

Computational Mechanics 19
- Ion-surface interactions and analysis 19
Electrical and Electronic Engineering 46
- Silicon and Solar Cell Technologies 23
- Semiconductor materials and devices 23
- Integrated Circuits and Semiconductor Failure Analysis 9
- Silicon Carbide Semiconductor Technologies 7
- Thin-Film Transistor Technologies 5

Co-authors: G. Giroult-Matlakowski Paul A. Basore Andrés Cuevas J.C. Dupuy Brice Gautier P. Warren M. Dutoit C. Marcenat
Journals: Materials Science and Engineering B (6 papers)Journal of Applied Physics (5 papers)Surface and Interface Analysis (3 papers)Applied Surface Science (3 papers)Thin Solid Films (3 papers)
Partner nations: France Germany United States

In The Last Decade

C. Dubois

56 papers receiving 689 citations

Peers

Countries citing papers authored by C. Dubois

Since Specialization

Citations

This map shows the geographic impact of C. Dubois's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Dubois with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Dubois more than expected).

Fields of papers citing papers by C. Dubois

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Dubois. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Dubois. The network helps show where C. Dubois may publish in the future.

Co-authors

The 25 scholars most cited alongside C. Dubois, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Dubois Line = papers co-authored together C. Dubois links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers Physical Review B ·More Vaishali Prashant, T. Klein, H. Cercellier, F. Lévy-Bertrand, Xavier Blase, J. Kačmarčík, T. Kociniewski, F. Chiodi, D. Débarre, Maja Kalinić, C. Dubois, C. Marcenat	2013	14
2	Investigations on the Origin of the Ohmic Behavior for Ti/Al Based Contacts on n-Type GaN Materials science forum ·G. Cabello, Olivier Ménard, C. Dubois, Dominique Tournier, 姚晴青, Christian Brylinski, F. Cayrel, Daniel Alquier	2012	2
3	Direct laser printing for high efficiency silicon solar cells fabrication Applied Surface Science ·G.I. Gadotti, C Wölfing, Denise Blanc, A. Kaminski, Monique Gauthier, C. Dubois, NE Wolter, M. Lemiti	2010	10
4	Quantitative SIMS measurement of high concentration of boron in silicon (up to 20at.%) using an isotopic comparative method Applied Surface Science ·C. Dubois, Maja Kalinić, Brice Gautier, Valentina Nedeljko	2008	15
5	Comparative models for diffusion of implanted beryllium in gallium arsenide Journal of Physics Condensed Matter ·Jiangjian Xu, J.C. Pesant, C. Dubois	2006	1
6	Boron diffusion in presence of defects induced by helium implantation Materials Science and Engineering B ·F. Cayrel, Daniel Alquier, C. Dubois, Robert Charles Houston	2005	5
7	Boron interaction with extended defects induced by He–H co-implantation in Si Materials Science and Engineering B ·Sonny Carter, F. Cayrel, Corrado Bongiorno, Robert Charles Houston, C. Dubois, V. Raineri, Daniel Alquier	2005	4
8	Characterization of crystalline MOCVD SrTiO3 films on SiO2/Si(100) Microelectronics Reliability ·María V. Bussy, S. Lhostis, Y. Rozier, O. Salicio, В. В. Неведюк, C. Dubois, Kwang Ki Baek, J.P. Sénateur, M. Audier, M.C. Holtslag, S Birov, Галицкий Юрий Яковлевич	2004	10
9	Layer morphology and Al implant profiles after annealing of supersaturated, single-crystalline, amorphous, and nanocrystalline SiC Journal of Applied Physics ·V. Heera, A. Mücklich, C. Dubois, M. Voelskow, W. Skorupa	2004	16
10	Properties of Cavities Induced by Helium Implantation in Silicon and their Applications to Devices Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·F. Cayrel, Daniel Alquier, L. Ventura, Maxime Vincent, Cos M. Hesseling, C. Dubois, Robert Charles Houston	2003	3
11	Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments Materials Science and Engineering B ·Laurent Ottaviani, Mihai Lazar, Marie‐Laure Locatelli, Dominique Planson, K.D. Kabongo, C. Dubois	2002	6
12	Structural properties of undoped and doped cubic GaN grown on SiC(001) Journal of Applied Physics ·E. Martinez‐Guerrero, E. Bellet‐Amalric, Leire Fernández, G. Feuillet, B. Daudin, H. Mariette, P. Holliger, C. Dubois, C. Bru‐Chevallier, Hiroaki Kanda, Thierry Chassagne, Gabriel Ferro, Y. Monteil	2002	39
13	Be diffusion in InGaAs/InP heterostructures grown by gas source molecular beam epitaxy Journal of Crystal Growth ·Jiangjian Xu, 邢芸芸, Madison Murray, Chien T‐F, K Rödel, C. Dubois	2000	3
14	Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces Materials Science and Engineering B ·Jiangjian Xu, Chang Ho Chung, S. Gautier, 邢芸芸, K Rödel, C. Dubois	1999	4
15	Stress and Stress Relaxation Study of Sputtered PZT Thin Films for Microsystems Applications MRS Proceedings ·Emmanuel Defaÿ, C. Malhaire, C. Dubois, D. Barbier	1999	2
16	Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy Journal of Crystal Growth ·K Rödel, 邢芸芸, Jiangjian Xu, Peter Martin, Chang Ho Chung, C. Dubois	1998	4
17	Quantification of germanium and boron in heterostructures Si/Si1−xGex/Si by SIMS Thin Solid Films ·Maja Kalinić, Brice Gautier, J.C. Dupuy, C. Dubois, Mickaële Bonneau, Ummer Awais, Fiona van den Heuvel, G. Brémond, R. Brenier	1997	25
18	Improvement of Crystal Quality of Epitaxial Silicon-Germanium Alloy Layers by Carbon Additions Helvetica physica acta ·رنا صقر, Xiaqin Li, J.-D. Ganière, M. Gailhanou, M. Dutoit, C. Dubois, J.C. Dupuy, G. Brémond	1994	1
19	Silicon-Carbon Random Alloy Epitaxy on Silicon by Rapid Thermal Chemical Vapor Deposition MRS Proceedings ·رنا صقر, Xiaqin Li, J.-D. Ganière, Shmuel Orenbuch, M. Dutoit, C. Dubois, J.C. Dupuy	1994	1
20	High-resolution SIMS profiling of nitrogen in ultra-thin SiO2 films nitrided by RTP in NH3 and N2O Microelectronic Engineering ·Gwenael Pichon, D. Bouvet, Xiaqin Li, N. Xanthopoulos, H Mathieu, M. Dutoit, C. Dubois, J.C. Dupuy	1993	6

About C. Dubois

C. Dubois is a scholar working on Computational Mechanics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Materials Chemistry, having authored 57 papers that have together received 711 indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (23 papers), Semiconductor materials and devices (23 papers), Ion-surface interactions and analysis (19 papers), Semiconductor materials and interfaces (14 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers), Silicon Nanostructures and Photoluminescence (8 papers), Silicon Carbide Semiconductor Technologies (7 papers) and Thin-Film Transistor Technologies (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (536 citations), Atomic and Molecular Physics, and Optics (261 citations), Condensed Matter Physics (91 citations), Materials Chemistry (251 citations) and Computational Mechanics (96 citations). C. Dubois has collaborated with scholars based in France, Germany and United States. Frequent co-authors include G. Giroult-Matlakowski, Paul A. Basore, Andrés Cuevas, J.C. Dupuy, Brice Gautier, P. Warren, M. Dutoit, C. Marcenat, D. Débarre and M. Gailhanou. Their work appears in journals such as Materials Science and Engineering B, Journal of Applied Physics, Surface and Interface Analysis, Applied Surface Science and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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