G. A. Seryogin

963 citations

20 papers · 815 indexed · h-index 14

Co-authors: S. A. Nikishin H. Temkin A. Osinsky S. Francoeur Fikadu Alema M. Holtz Vladimir G. Antipov N. N. Faleev
Topics: Ga2O3 and related materials (9 papers)GaN-based semiconductor devices and materials (9 papers)Quantum Dots Synthesis And Properties (5 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Physical review. B, Condensed matter Applied Physics Letters Nanotechnology
Partner nations: United States Russia Taiwan

In The Last Decade

G. A. Seryogin

19 papers receiving 792 citations

Peers

Countries citing papers authored by G. A. Seryogin

Since Specialization

Citations

This map shows the geographic impact of G. A. Seryogin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. A. Seryogin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. A. Seryogin more than expected).

Fields of papers citing papers by G. A. Seryogin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. A. Seryogin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. A. Seryogin. The network helps show where G. A. Seryogin may publish in the future.

Co-authorship network of co-authors of G. A. Seryogin

This figure shows the co-authorship network connecting the top 25 collaborators of G. A. Seryogin. A scholar is included among the top collaborators of G. A. Seryogin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. A. Seryogin. G. A. Seryogin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm² 2021 ·IEEE Electron Device Letters ·Arkka Bhattacharyya,Praneeth Ranga,Saurav Roy,Carl Peterson,Fikadu Alema,G. A. Seryogin,A. Osinsky,Sriram Krishnamoorthy	68
2	Ge doping of β-Ga2O3 by MOCVD 2021 ·APL Materials ·Fikadu Alema,G. A. Seryogin,(unknown),A. Osinsky	60
3	MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor 2020 ·Applied Physics Letters ·G. A. Seryogin,Fikadu Alema,(unknown),Houqiang Fu,(unknown),Adam T. Neal,Shin Mou,(unknown),A. Osinsky	116
4	Band gap of sphalerite and chalcopyrite phases of epitaxial ZnSnP2 2010 ·Applied Physics Letters ·Philippe St-Jean,G. A. Seryogin,S. Francoeur	33
5	Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire 2009 ·Nanoscale Research Letters ·Ilan Shalish,G. A. Seryogin,Wei Yi,Jiming Bao,(unknown),(unknown),David C. Bell,Federico Capasso,V. Narayanamurti	13
6	Catalytic hydride vapour phase epitaxy growth of GaN nanowires 2005 ·Nanotechnology ·G. A. Seryogin,Ilan Shalish,Warren J. MoberlyChan,V. Narayanamurti	67
7	Imaging Defects in Nanometer-scale Semiconductor Crystals: Statistical Nucleation Events are Few in Small Crystals, but can Control Growth 2005 ·Microscopy and Microanalysis ·W J MoberlyChan,G. A. Seryogin,Ilan Shalish,(unknown),(unknown),(unknown),V. Narayanamurti,F. Spaepen	0
8	Structural and compositional variations in ZnSnP2/GaAs superlattices 2000 ·Applied Physics Letters ·(unknown),Mattias Beck,R. S. Goldman,G. A. Seryogin,S. A. Nikishin,H. Temkin	7
9	High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 2000 ·MRS Internet Journal of Nitride Semiconductor Research ·S. A. Nikishin,N. N. Faleev,Vladimir G. Antipov,S. Francoeur,Luis Grave de Peralta,G. A. Seryogin,M. Holtz,T. Prokofyeva,S. N. G. Chu,A. S. Zubrilov,V.A. Elyukhin,(unknown),Andrei V. Nikolaev,(unknown),V. Dmitriev,H. Temkin	2
10	Quantitative determination of the order parameter in epitaxial layers of ZnSnP2 2000 ·Applied Physics Letters ·S. Francoeur,G. A. Seryogin,S. A. Nikishin,H. Temkin	16
11	X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP2 grown on GaAs 1999 ·Applied Physics Letters ·S. Francoeur,G. A. Seryogin,S. A. Nikishin,H. Temkin	15
12	Order–disorder transition in epitaxial ZnSnP2 1999 ·Applied Physics Letters ·G. A. Seryogin,S. A. Nikishin,H. Temkin,A. M. Mintairov,J. L. Merz,M. Holtz	27
13	High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia 1999 ·Applied Physics Letters ·S. A. Nikishin,Vladimir G. Antipov,S. Francoeur,N. N. Faleev,G. A. Seryogin,V.A. Elyukhin,H. Temkin,T. Prokofyeva,M. Holtz,A. Konkar,Stefan Zollner	58
14	High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 1999 ·MRS Proceedings ·S. A. Nikishin,N. N. Faleev,Vladimir G. Antipov,S. Francoeur,Luis Grave de Peralta,G. A. Seryogin,M. Holtz,T. Prokofyeva,S. N. G. Chu,A. S. Zubrilov,V.A. Elyukhin,(unknown),Andrei V. Nikolaev,(unknown),V. Dmitriev,H. Temkin	1
15	Vibrational Raman and infrared studies of ordering in epitaxialZnSnP2 1999 ·Physical review. B, Condensed matter ·A. M. Mintairov,(unknown),(unknown),M. Holtz,G. A. Seryogin,S. A. Nikishin,H. Temkin	33
16	High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia 1999 ·Applied Physics Letters ·S. A. Nikishin,N. N. Faleev,Vladimir G. Antipov,S. Francoeur,Luis Grave de Peralta,G. A. Seryogin,H. Temkin,T. Prokofyeva,M. Holtz,S. N. G. Chu	173
17	Single phase ZnSnAs2 grown by molecular beam epitaxy 1998 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·G. A. Seryogin,S. A. Nikishin,H. Temkin,R. Schlaf,(unknown),Wen Yan,B. A. Parkinson,V.A. Elyukhin,Yu. Kudriavtsev,A. M. Mintairov,N. N. Faleev,М. В. Байдакова	27
18	Gas source molecular beam epitaxy of cubic (0 0 1) using hydrazine 1997 ·Journal of Crystal Growth ·S. A. Nikishin,G. A. Seryogin,H. Temkin,Vladimir G. Antipov,S. Ruvimov,A. Merkulov	1
19	Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine 1996 ·Applied Physics Letters ·S. A. Nikishin,Vladimir G. Antipov,S. Ruvimov,G. A. Seryogin,H. Temkin	11
20	High quality GaN–InGaN heterostructures grown on (111) silicon substrates 1996 ·Applied Physics Letters ·J. Yang,C. J. Sun,(unknown),M. Zubair Anwar,M. Asif Khan,S. A. Nikishin,G. A. Seryogin,A. Osinsky,Leonid Chernyak,H. Temkin,(unknown),S. Mahajan	87

About G. A. Seryogin

G. A. Seryogin is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 20 papers that have together received 815 indexed citations. Recurring topics across this work include Ga2O3 and related materials (9 papers), GaN-based semiconductor devices and materials (9 papers) and Quantum Dots Synthesis And Properties (5 papers). The work is most often cited by research in Condensed Matter Physics (436 citations), Electronic, Optical and Magnetic Materials (476 citations) and Materials Chemistry (500 citations). G. A. Seryogin has collaborated with scholars based in United States, Russia and Taiwan. Frequent co-authors include S. A. Nikishin, H. Temkin, A. Osinsky, S. Francoeur, Fikadu Alema, M. Holtz, Vladimir G. Antipov, N. N. Faleev, T. Prokofyeva and Ilan Shalish. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters and Nanotechnology.

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