G. A. Seryogin

963 citations

20 papers · 815 indexed · h-index 14

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 9
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 9
Materials Chemistry top 10%
- Quantum Dots Synthesis And Properties 5
- ZnO doping and properties 5
Renewable Energy, Sustainability and the Environment top 10%
Mechanics of Materials top 10%
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 5
- Semiconductor materials and interfaces 4
Electrical and Electronic Engineering
- Chalcogenide Semiconductor Thin Films 5
Biomedical Engineering
- Nanowire Synthesis and Applications 3

Co-authors: S. A. Nikishin H. Temkin A. Osinsky S. Francoeur Fikadu Alema M. Holtz Vladimir G. Antipov N. N. Faleev
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Physical review. B, Condensed matter (1 paper)Applied Physics Letters (10 papers)Nanotechnology (1 paper)
Partner nations: United States Russia Taiwan

In The Last Decade

G. A. Seryogin

19 papers receiving 792 citations

Peers

Countries citing papers authored by G. A. Seryogin

Since Specialization

Citations

This map shows the geographic impact of G. A. Seryogin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. A. Seryogin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. A. Seryogin more than expected).

Fields of papers citing papers by G. A. Seryogin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. A. Seryogin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. A. Seryogin. The network helps show where G. A. Seryogin may publish in the future.

Co-authorship network

The 25 scholars most cited alongside G. A. Seryogin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. A. Seryogin Line = papers co-authored together G. A. Seryogin links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm² IEEE Electron Device Letters ·Arkka Bhattacharyya,Praneeth Ranga,Saurav Roy,Carl Peterson,Fikadu Alema,G. A. Seryogin,A. Osinsky,Sriram Krishnamoorthy	2021	68
2	Ge doping of β-Ga2O3 by MOCVD APL Materials ·Fikadu Alema,G. A. Seryogin,A. Osinsky,A. Osinsky	2021	60
3	MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor Applied Physics Letters ·G. A. Seryogin,Fikadu Alema,Nicholas Valente,Houqiang Fu,Erich Steinbrunner,Adam T. Neal,Shin Mou,Aaron Fine,A. Osinsky	2020	116
4	Band gap of sphalerite and chalcopyrite phases of epitaxial ZnSnP2 Applied Physics Letters ·Philippe St-Jean,G. A. Seryogin,S. Francoeur	2010	33
5	Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire Nanoscale Research Letters ·Ilan Shalish,G. A. Seryogin,Wei Yi,Jiming Bao,M. A. Zimmler,Edward Likovich,David C. Bell,Federico Capasso,V. Narayanamurti	2009	13
6	Catalytic hydride vapour phase epitaxy growth of GaN nanowires Nanotechnology ·G. A. Seryogin,Ilan Shalish,Warren J. MoberlyChan,V. Narayanamurti	2005	67
7	Imaging Defects in Nanometer-scale Semiconductor Crystals: Statistical Nucleation Events are Few in Small Crystals, but can Control Growth Microscopy and Microanalysis ·W J MoberlyChan,G. A. Seryogin,Ilan Shalish,C-Y Wen,S-F Hu,Guo Xj,V. Narayanamurti,F. Spaepen	2005	0
8	Structural and compositional variations in ZnSnP2/GaAs superlattices Applied Physics Letters ·B. Lita,Mattias Beck,R. S. Goldman,G. A. Seryogin,S. A. Nikishin,H. Temkin	2000	7
9	High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia MRS Internet Journal of Nitride Semiconductor Research ·S. A. Nikishin,N. N. Faleev,Vladimir G. Antipov,S. Francoeur,Luis Grave de Peralta,G. A. Seryogin,M. Holtz,T. Prokofyeva,S. N. G. Chu,A. S. Zubrilov,V.A. Elyukhin,Irina P. Nikitina,Andrei V. Nikolaev,Yuriy Melnik,V. Dmitriev,H. Temkin	2000	2
10	Quantitative determination of the order parameter in epitaxial layers of ZnSnP2 Applied Physics Letters ·S. Francoeur,G. A. Seryogin,S. A. Nikishin,H. Temkin	2000	16
11	X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP2 grown on GaAs Applied Physics Letters ·S. Francoeur,G. A. Seryogin,S. A. Nikishin,H. Temkin	1999	15
12	Order–disorder transition in epitaxial ZnSnP2 Applied Physics Letters ·G. A. Seryogin,S. A. Nikishin,H. Temkin,A. M. Mintairov,J. L. Merz,M. Holtz	1999	27
13	High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia Applied Physics Letters ·S. A. Nikishin,Vladimir G. Antipov,S. Francoeur,N. N. Faleev,G. A. Seryogin,V.A. Elyukhin,H. Temkin,T. Prokofyeva,M. Holtz,A. Konkar,Stefan Zollner	1999	58
14	High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia MRS Proceedings ·S. A. Nikishin,N. N. Faleev,Vladimir G. Antipov,S. Francoeur,Luis Grave de Peralta,G. A. Seryogin,M. Holtz,T. Prokofyeva,S. N. G. Chu,A. S. Zubrilov,V.A. Elyukhin,Irina P. Nikitina,Andrei V. Nikolaev,Yuriy Melnik,V. Dmitriev,H. Temkin	1999	1
15	Vibrational Raman and infrared studies of ordering in epitaxialZnSnP2 Physical review. B, Condensed matter ·A. M. Mintairov,N. A. Sadchikov,Toni Sauncy,M. Holtz,G. A. Seryogin,S. A. Nikishin,H. Temkin	1999	33
16	High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia Applied Physics Letters ·S. A. Nikishin,N. N. Faleev,Vladimir G. Antipov,S. Francoeur,Luis Grave de Peralta,G. A. Seryogin,H. Temkin,T. Prokofyeva,M. Holtz,S. N. G. Chu	1999	173
17	Single phase ZnSnAs2 grown by molecular beam epitaxy Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·G. A. Seryogin,S. A. Nikishin,H. Temkin,R. Schlaf,Laura Sharp,Wen Yan,B. A. Parkinson,V.A. Elyukhin,Yu. Kudriavtsev,A. M. Mintairov,N. N. Faleev,М. В. Байдакова	1998	27
18	Gas source molecular beam epitaxy of cubic (0 0 1) using hydrazine Journal of Crystal Growth ·S. A. Nikishin,G. A. Seryogin,H. Temkin,Vladimir G. Antipov,S. Ruvimov,A. Merkulov	1997	1
19	Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine Applied Physics Letters ·S. A. Nikishin,Vladimir G. Antipov,S. Ruvimov,G. A. Seryogin,H. Temkin	1996	11
20	High quality GaN–InGaN heterostructures grown on (111) silicon substrates Applied Physics Letters ·J. Yang,C. J. Sun,Q. Chen,M. Zubair Anwar,M. Asif Khan,S. A. Nikishin,G. A. Seryogin,A. Osinsky,Leonid Chernyak,H. Temkin,Chimin Hu,S. Mahajan	1996	87

About G. A. Seryogin

G. A. Seryogin is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 20 papers that have together received 815 indexed citations. Recurring topics across this work include Ga2O3 and related materials (9 papers), GaN-based semiconductor devices and materials (9 papers), Quantum Dots Synthesis And Properties (5 papers), Semiconductor Quantum Structures and Devices (5 papers), Chalcogenide Semiconductor Thin Films (5 papers), ZnO doping and properties (5 papers), Semiconductor materials and interfaces (4 papers) and Nanowire Synthesis and Applications (3 papers). The work is most often cited by research in Condensed Matter Physics (436 citations), Electronic, Optical and Magnetic Materials (476 citations) and Materials Chemistry (500 citations). G. A. Seryogin has collaborated with scholars based in United States, Russia and Taiwan. Frequent co-authors include S. A. Nikishin, H. Temkin, A. Osinsky, S. Francoeur, Fikadu Alema, M. Holtz, Vladimir G. Antipov, N. N. Faleev, T. Prokofyeva and Ilan Shalish. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters and Nanotechnology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact