Hisataka Hayashi

595 total citations
40 papers, 505 citations indexed

About

Hisataka Hayashi is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Mechanics of Materials. According to data from OpenAlex, Hisataka Hayashi has authored 40 papers receiving a total of 505 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 17 papers in Electronic, Optical and Magnetic Materials and 13 papers in Mechanics of Materials. Recurrent topics in Hisataka Hayashi's work include Semiconductor materials and devices (21 papers), Plasma Diagnostics and Applications (18 papers) and Copper Interconnects and Reliability (17 papers). Hisataka Hayashi is often cited by papers focused on Semiconductor materials and devices (21 papers), Plasma Diagnostics and Applications (18 papers) and Copper Interconnects and Reliability (17 papers). Hisataka Hayashi collaborates with scholars based in Japan, United States and South Korea. Hisataka Hayashi's co-authors include Makoto Sekine, Kazuaki Kurihara, Satoshi Morishita, Masami Inoue, Shuichi Noda, Tetsuya Tatsumi, Yukinobu Hikosaka, Mitsuru Okigawa, Hiroshi Yamamoto and Mitsuhiro Omura and has published in prestigious journals such as Journal of Applied Physics, Chemical Engineering Science and Japanese Journal of Applied Physics.

In The Last Decade

Hisataka Hayashi

39 papers receiving 471 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hisataka Hayashi Japan 12 468 158 146 109 86 40 505
M. F. Doemling United States 7 417 0.9× 192 1.2× 143 1.0× 108 1.0× 54 0.6× 8 455
Katsumi Yoneda Japan 11 364 0.8× 115 0.7× 168 1.2× 141 1.3× 49 0.6× 29 466
Sergi Gomez United States 9 341 0.7× 121 0.8× 96 0.7× 31 0.3× 61 0.7× 9 387
D. Carl United States 11 324 0.7× 98 0.6× 114 0.8× 123 1.1× 40 0.5× 17 365
Kazuo Nojiri Japan 9 377 0.8× 98 0.6× 148 1.0× 44 0.4× 54 0.6× 16 412
Karsten Arts Netherlands 12 488 1.0× 89 0.6× 366 2.5× 67 0.6× 36 0.4× 16 562
Andrew S. Alimonda United States 8 404 0.9× 104 0.7× 189 1.3× 30 0.3× 54 0.6× 12 459
Satish D. Athavale United States 7 400 0.9× 91 0.6× 291 2.0× 63 0.6× 66 0.8× 10 487
L. M. Ephrath United States 11 356 0.8× 68 0.4× 111 0.8× 37 0.3× 54 0.6× 16 400
Yasushi Nakasaki Japan 12 465 1.0× 93 0.6× 161 1.1× 182 1.7× 39 0.5× 44 530

Countries citing papers authored by Hisataka Hayashi

Since Specialization
Citations

This map shows the geographic impact of Hisataka Hayashi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hisataka Hayashi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hisataka Hayashi more than expected).

Fields of papers citing papers by Hisataka Hayashi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hisataka Hayashi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hisataka Hayashi. The network helps show where Hisataka Hayashi may publish in the future.

Co-authorship network of co-authors of Hisataka Hayashi

This figure shows the co-authorship network connecting the top 25 collaborators of Hisataka Hayashi. A scholar is included among the top collaborators of Hisataka Hayashi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hisataka Hayashi. Hisataka Hayashi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kurihara, Kazuaki, Tomoyuki Tanaka, Hiroaki Kakiuchi, et al.. (2021). Reactive ion etching process of SiO 2 film using on-site synthesized C 2 F 4 from CF 4. Japanese Journal of Applied Physics. 60(5). 50904–50904. 2 indexed citations
2.
Hayashi, Hisataka, et al.. (2021). Cyclic C 4 F 8 and O 2 plasma etching of TiO 2 for high-aspect-ratio three-dimensional devices. Japanese Journal of Applied Physics. 60(3). 36001–36001. 5 indexed citations
3.
Yoshikawa, Kenichi, et al.. (2020). Silver film etching using halogen gas plasma. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(5). 2 indexed citations
4.
Omura, Mitsuhiro, Jun-ichi Hashimoto, Takahiro ADACHI, et al.. (2019). Formation mechanism of sidewall striation in high-aspect-ratio hole etching. Japanese Journal of Applied Physics. 58(SE). SEEB02–SEEB02. 29 indexed citations
5.
Ishikawa, Kenji, Tatsuo Ishijima, Tatsuru Shirafuji, et al.. (2019). Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective. Japanese Journal of Applied Physics. 58(SE). SE0801–SE0801. 15 indexed citations
6.
Yamamoto, Katsumi, et al.. (2017). Study of CO2 ashing for porous SiOCH film using 100 MHz/13.56 MHz dual frequency superimposed capacitive coupled plasma. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 35(6). 5 indexed citations
7.
Omura, Mitsuhiro, et al.. (2017). Layer-by-layer etching of LaAlSiOx. Plasma Sources Science and Technology. 26(6). 65015–65015. 6 indexed citations
8.
Yamamoto, Hiroshi, et al.. (2014). Selective etch of poly(methyl methacrylate) in block copolymer based on control of ion energy and design of gas chemistry for directed self assembly lithography. Japanese Journal of Applied Physics. 53(3S2). 03DD03–03DD03. 7 indexed citations
9.
Kobayashi, Katsutoshi, et al.. (2008). Sub-45nm resist process using stacked-mask process. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6923. 69232O–69232O. 5 indexed citations
10.
Ohashi, Takashi, et al.. (2008). Sub-45 nm SiO2 Etching with Stacked-Mask Process Using High-Bias-Frequency Dual-Frequency-Superimposed RF Capacitively Coupled Plasma. Japanese Journal of Applied Physics. 47(10R). 8026–8026. 17 indexed citations
11.
Yamamoto, Katsumi, et al.. (2006). Highly Selective Si3N4/SiOC Etching Using Dual Frequency Superimposed RF Capacitively Coupled Plasma. Japanese Journal of Applied Physics. 45(7R). 5954–5954. 3 indexed citations
12.
Kojima, Akihiro, et al.. (2005). Dual-Frequency Superimposed RF Capacitive-Coupled Plasma Etch Process. Japanese Journal of Applied Physics. 44(8R). 6241–6241. 15 indexed citations
13.
Sato, Yasuhiko, et al.. (2003). Application of Electron Beam Cured Spin-On Glass to Trilevel Resist System for Deep and Vacuum Ultraviolet Lithography. Japanese Journal of Applied Physics. 42(Part 1, No. 6B). 3890–3893. 1 indexed citations
14.
Hayashi, Hisataka & Makoto Sekine. (1999). Mechanism of Highly Selective SiO2 to Si3N4 Etching Using C4F8 + CO Magnetron Plasma. Japanese Journal of Applied Physics. 38(8R). 4910–4910. 6 indexed citations
15.
Hayashi, Hisataka, Mitsuru Okigawa, Satoshi Morishita, & Makoto Sekine. (1999). Mechanism of fluorine reduction in C4F8/Ar parallel-plate-type electron-cyclotron-resonance plasma by a Si top plate. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(5). 2517–2524. 7 indexed citations
16.
Hayashi, Hisataka, Satoshi Morishita, Tetsuya Tatsumi, et al.. (1999). Mechanism of C4F8 dissociation in parallel-plate-type plasma. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(5). 2557–2571. 50 indexed citations
17.
Itabashi, Naoshi, Hisataka Hayashi, Tetsuya Tatsumi, et al.. (1998). Analyses of Radicals in Etching Plasma Using Laser Spectroscopy in Association of Super-Advanced Electronics Technologies. The Review of Laser Engineering. 26(6). 425–432.
18.
Hayashi, Hisataka, Kazuaki Kurihara, & Makoto Sekine. (1996). Characterization of Highly Selective SiO_2/Si_3N_4 Etching of High-Aspect-Ratio Holes. 35(4). 2488–2493. 3 indexed citations
19.
Hayashi, Hisataka, Kazuaki Kurihara, & Makoto Sekine. (1996). Characterization of Highly Selective SiO2/Si3N4 Etching of High-Aspect-Ratio Holes. Japanese Journal of Applied Physics. 35(4S). 2488–2488. 54 indexed citations
20.
Toei, Ryozo, et al.. (1977). Hydrogenation of ethylene in two dimensional gas-solid fluidised bed with perforated plate.. JOURNAL OF CHEMICAL ENGINEERING OF JAPAN. 10(4). 307–313. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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