Tetsuya Tatsumi

1.7k total citations
67 papers, 1.5k citations indexed

About

Tetsuya Tatsumi is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, Tetsuya Tatsumi has authored 67 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 61 papers in Electrical and Electronic Engineering, 25 papers in Materials Chemistry and 20 papers in Mechanics of Materials. Recurrent topics in Tetsuya Tatsumi's work include Semiconductor materials and devices (39 papers), Plasma Diagnostics and Applications (32 papers) and Metal and Thin Film Mechanics (20 papers). Tetsuya Tatsumi is often cited by papers focused on Semiconductor materials and devices (39 papers), Plasma Diagnostics and Applications (32 papers) and Metal and Thin Film Mechanics (20 papers). Tetsuya Tatsumi collaborates with scholars based in Japan, United States and Taiwan. Tetsuya Tatsumi's co-authors include Masanaga Fukasawa, Makoto Sekine, Miyako Matsui, Kazunori Nagahata, Satoshi Hamaguchi, Kazuhiro Karahashi, S. Kadomura, Masaru Hori, Seigo Takashima and Tomoko Ito and has published in prestigious journals such as Journal of Applied Physics, Applied Surface Science and Journal of Physics D Applied Physics.

In The Last Decade

Tetsuya Tatsumi

61 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tetsuya Tatsumi Japan 21 1.4k 494 416 310 235 67 1.5k
Masanaga Fukasawa Japan 19 1.0k 0.7× 345 0.7× 322 0.8× 227 0.7× 199 0.8× 50 1.1k
Thorsten Lill United States 20 1.3k 0.9× 317 0.6× 611 1.5× 156 0.5× 166 0.7× 55 1.4k
L. Vallier France 21 925 0.7× 303 0.6× 208 0.5× 325 1.0× 79 0.3× 54 995
Y. Arnal France 19 665 0.5× 348 0.7× 252 0.6× 109 0.4× 112 0.5× 40 844
S. Banna United States 15 603 0.4× 237 0.5× 205 0.5× 147 0.5× 43 0.2× 34 726
JJ Beulens Netherlands 14 666 0.5× 364 0.7× 282 0.7× 112 0.4× 67 0.3× 24 814
Kazuhiro Karahashi Japan 18 842 0.6× 242 0.5× 399 1.0× 91 0.3× 308 1.3× 57 977
A. Rhallabi France 14 634 0.5× 243 0.5× 269 0.6× 56 0.2× 90 0.4× 62 794
N. Sakudo Japan 13 537 0.4× 265 0.5× 201 0.5× 60 0.2× 111 0.5× 83 784
Shigeru Nishimatsu Japan 16 820 0.6× 131 0.3× 307 0.7× 89 0.3× 142 0.6× 36 918

Countries citing papers authored by Tetsuya Tatsumi

Since Specialization
Citations

This map shows the geographic impact of Tetsuya Tatsumi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tetsuya Tatsumi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tetsuya Tatsumi more than expected).

Fields of papers citing papers by Tetsuya Tatsumi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tetsuya Tatsumi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tetsuya Tatsumi. The network helps show where Tetsuya Tatsumi may publish in the future.

Co-authorship network of co-authors of Tetsuya Tatsumi

This figure shows the co-authorship network connecting the top 25 collaborators of Tetsuya Tatsumi. A scholar is included among the top collaborators of Tetsuya Tatsumi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tetsuya Tatsumi. Tetsuya Tatsumi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tatsumi, Tetsuya, et al.. (2025). Improvement of MoS2 film quality using sputtering processes controlling particle- and energy-flux followed by sulfur-vapor annealing. Japanese Journal of Applied Physics. 64(2). 21001–21001.
2.
Kawanago, Takamasa, Iriya Muneta, Kazuo Tsutsui, et al.. (2024). Reduction of contact resistance to PVD-MoS₂ film using aluminum–scandium alloy (AISc) edge contact. 1–3.
3.
Muneta, Iriya, Kuniyuki Kakushima, Tetsuya Tatsumi, et al.. (2024). Improvement of MoS2 Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid. IEEE Journal of the Electron Devices Society. 13. 15–23. 2 indexed citations
4.
Tatsumi, Tetsuya, et al.. (2024). Conductivity Enhancement of PVD-WS2 Films Using Cl2-Plasma Treatment Followed by Sulfur-Vapor Annealing. IEEE Journal of the Electron Devices Society. 12. 390–398. 1 indexed citations
5.
Kitazawa, T., et al.. (2024). Impact of crystallinity on thermal conductivity of RF magnetron sputtered MoS2 thin films. Japanese Journal of Applied Physics. 63(5). 55508–55508.
6.
Tatsumi, Tetsuya, et al.. (2024). (Invited) High Crystallinity of MoS2 by Film Annealing in Sulfur Atmosphere and Plasma Control during RF Sputtering. ECS Meeting Abstracts. MA2024-02(20). 1791–1791.
7.
Tatsumi, Tetsuya, et al.. (2023). Modeling and simulation of coverage and film properties in deposition process on large-scale pattern using statistical ensemble method. Japanese Journal of Applied Physics. 62(SI). SI1006–SI1006. 1 indexed citations
8.
Kawanago, Takamasa, Iriya Muneta, Kuniyuki Kakushima, et al.. (2023). Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film. 1–3. 1 indexed citations
9.
Hamada, Masaya, Satoshi Igarashi, Iriya Muneta, et al.. (2021). WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box. IEEE Journal of the Electron Devices Society. 9. 1117–1124. 6 indexed citations
10.
Tomiya, Shigetaka, Tetsuya Tatsumi, Masaya Hamada, et al.. (2021). Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing. IEEE Journal of the Electron Devices Society. 9. 278–285. 12 indexed citations
11.
Tatsumi, Tetsuya. (2021). Quantitative control of plasma and surface reactions for dielectric film etching. Japanese Journal of Applied Physics. 61(SA). SA0804–SA0804. 11 indexed citations
12.
Ishikawa, Kenji, et al.. (2020). Reduction in photon-induced interface defects by optimal pulse repetition rate in the pulse-modulated inductively coupled plasma. Japanese Journal of Applied Physics. 60(1). 10906–10906. 2 indexed citations
13.
Urabe, Keiichiro, et al.. (2020). Characterization of dynamic behaviors of defects in Si substrates created by H 2 plasma using conductance method. Japanese Journal of Applied Physics. 59(SJ). SJJC02–SJJC02. 6 indexed citations
14.
Li, Hu, Kazuhiro Karahashi, Masanaga Fukasawa, et al.. (2016). Mass-selected ion beam study on etching characteristics of ZnO by methane-based plasma. Japanese Journal of Applied Physics. 55(2). 21202–21202. 13 indexed citations
15.
Fukasawa, Masanaga, et al.. (2015). Control of SiO. Japanese Journal of Applied Physics. 54(6). 3 indexed citations
16.
Ito, Tomoko, Michiro Isobe, Kazuhiro Karahashi, et al.. (2014). Characterization of polymer layer formation during SiO. Japanese Journal of Applied Physics. 53(3). 1 indexed citations
17.
Ito, Tomoko, Kazuhiro Karahashi, Masanaga Fukasawa, Tetsuya Tatsumi, & Satoshi Hamaguchi. (2011). Si Recess of Polycrystalline Silicon Gate Etching: Damage Enhanced by Ion Assisted Oxygen Diffusion. Japanese Journal of Applied Physics. 50(8S2). 08KD02–08KD02. 19 indexed citations
18.
Nakakubo, Yoshinori, Asahiko Matsuda, Masanaga Fukasawa, et al.. (2010). Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring. Japanese Journal of Applied Physics. 49(8S1). 08JD02–08JD02. 52 indexed citations
19.
Itabashi, Naoshi, Hisataka Hayashi, Tetsuya Tatsumi, et al.. (1998). Analyses of Radicals in Etching Plasma Using Laser Spectroscopy in Association of Super-Advanced Electronics Technologies. The Review of Laser Engineering. 26(6). 425–432.
20.
Tatsumi, Tetsuya, et al.. (1993). Etch Rate Acceleration of SiO2 during Wet Treatment after Gate Etching. Japanese Journal of Applied Physics. 32(12S). 6114–6114. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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