Y. Tsunashima

1.2k total citations
77 papers, 846 citations indexed

About

Y. Tsunashima is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Y. Tsunashima has authored 77 papers receiving a total of 846 indexed citations (citations by other indexed papers that have themselves been cited), including 68 papers in Electrical and Electronic Engineering, 12 papers in Biomedical Engineering and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Y. Tsunashima's work include Semiconductor materials and devices (58 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Ferroelectric and Negative Capacitance Devices (16 papers). Y. Tsunashima is often cited by papers focused on Semiconductor materials and devices (58 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Ferroelectric and Negative Capacitance Devices (16 papers). Y. Tsunashima collaborates with scholars based in Japan, United States and South Korea. Y. Tsunashima's co-authors include Ichiro Mizushima, Tsutomu Sato, Tsutomu Sato, Shun Taniguchi, K. Suguro, Seiji Inumiya, A. Yagishita, Tomohiro Saito, Kazuhiro Eguchi and T. Arikado and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Surface Science.

In The Last Decade

Y. Tsunashima

72 papers receiving 802 citations

Peers

Y. Tsunashima
Norio Hirashita Japan
A. Kalnitsky United States
Howard R. Huff United States
M. Hoshino Japan
Daisuke Kosemura Japan
S. Habermehl United States
E. Mateeva United States
A. Plößl Germany
Shin‐ichiro Uekusa Japan
Wataru Mizubayashi Japan
Norio Hirashita Japan
Y. Tsunashima
Citations per year, relative to Y. Tsunashima Y. Tsunashima (= 1×) peers Norio Hirashita

Countries citing papers authored by Y. Tsunashima

Since Specialization
Citations

This map shows the geographic impact of Y. Tsunashima's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Tsunashima with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Tsunashima more than expected).

Fields of papers citing papers by Y. Tsunashima

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Tsunashima. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Tsunashima. The network helps show where Y. Tsunashima may publish in the future.

Co-authorship network of co-authors of Y. Tsunashima

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Tsunashima. A scholar is included among the top collaborators of Y. Tsunashima based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Tsunashima. Y. Tsunashima is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sato, Motoyuki, Yasushi Nakasaki, Kôji Watanabe, et al.. (2008). Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane. Japanese Journal of Applied Physics. 47(2R). 879–879.
2.
Kawasaki, H., S. Inaba, N. Aoki, et al.. (2007). FinFET Process and Integration Technology for High Performance LSI in 22 nm node and beyond. 3–8. 5 indexed citations
3.
Mizushima, Ichiro, Atsushi Yagishita, K. Suguro, et al.. (2006). Novel Elevated Source/Drain Technology for FinFET Overcoming Agglomeration and Facet Problems Utilizing Solid Phase Epitaxy. 1 indexed citations
4.
Inaba, S., K. Okano, A. Kaneko, et al.. (2006). FinFET: the prospective multi-gate device for future SoC applications. 50–53. 5 indexed citations
5.
Aoyama, Tomonori, Motoyuki Sato, Takeshi Watanabe, et al.. (2006). HfSiON gate dielectric technology for CMOSFET application. 380–383. 2 indexed citations
6.
Yamaguchi, Takeshi, et al.. (2004). Defect generation and dielectric breakdown mechanism of HfSiO(N). 104(135). 71–76. 1 indexed citations
7.
Saito, Tomohiro, et al.. (2003). Low-Standby-Power Complementary Metal-Oxide-Semiconductor Transistors with TiN Single Gate on 1.8 nm Gate Oxide. Japanese Journal of Applied Physics. 42(Part 2, No. 10A). L1130–L1132. 3 indexed citations
8.
Sato, Tsutomu, N. Aoki, Ichiro Mizushima, & Y. Tsunashima. (2003). A new substrate engineering for the formation of empty space in silicon (ESS) induced by silicon surface migration. 517–520. 16 indexed citations
9.
Müller, K.P., et al.. (2002). Trench storage node technology for gigabit DRAM generations. 507–510. 15 indexed citations
10.
11.
12.
Hokazono, A., K. Ohuchi, K. Miyano, et al.. (2002). Source/drain engineering for sub-100 nm CMOS using selective epitaxial growth technique. 243–246. 21 indexed citations
13.
Yagishita, A., Tomohiro Saito, K. Nakajima, et al.. (2000). High performance damascene metal gate MOSFETs for 0.1 μm regime. IEEE Transactions on Electron Devices. 47(5). 1028–1034. 27 indexed citations
14.
Fujiwara, M., Tsutomu Sato, Ichiro Mizushima, et al.. (2000). Dopant Diffusion in Silicon Substrate during Oxynitride Process. MRS Proceedings. 610. 1 indexed citations
15.
Inumiya, Seiji, Atsushi Yagishita, Tomohiro Saito, et al.. (2000). Sub-1.3 nm Amorphous Tantalum Pentoxide Gate Dielectrics for Damascene Metal Gate Transistors. Japanese Journal of Applied Physics. 39(4S). 2087–2087. 8 indexed citations
16.
17.
Tsunashima, Y., T. Wada, Kenji Taniguchi, et al.. (1985). Metal-Coated Lightly-Doped Drain (MLD) MOSFET's for Sub-Micron VLSI's. Symposium on VLSI Technology. 114–115. 6 indexed citations
18.
19.
Nishikawa, Osamu, Y. Tsunashima, Eiichi Nomura, et al.. (1983). Atom-probe study of the early stage of silicide formation. I. W–Si system. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 1(1). 6–9. 19 indexed citations
20.
Nishikawa, Osamu, Y. Tsunashima, Eiichi Nomura, et al.. (1983). Atom-probe study of the initial stage of silicide formation. Surface Science. 126(1-3). 529–533. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Norio Hirashita Breakdown of academic impact, for papers by A. Kalnitsky Breakdown of academic impact, for papers by Howard R. Huff Breakdown of academic impact, for papers by M. Hoshino Breakdown of academic impact, for papers by Daisuke Kosemura Breakdown of academic impact, for papers by S. Habermehl Breakdown of academic impact, for papers by E. Mateeva Breakdown of academic impact, for papers by A. Plößl Breakdown of academic impact, for papers by Shin‐ichiro Uekusa Breakdown of academic impact, for papers by Wataru Mizubayashi
Rankless by CCL
2026